MCH3478-TL-W
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onsemi MCH3478-TL-W

Manufacturer No:
MCH3478-TL-W
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 2A 3MCPH
Delivery:
Payment:
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Product Introduction

Overview

The MCH3478-TL-W is a high-performance N-Channel MOSFET produced by onsemi. This device is designed for general-purpose switching applications and is known for its reliability and efficiency. The MCH3478-TL-W is a surface-mount device, making it suitable for a wide range of electronic systems where compact design is crucial.

Key Specifications

ParameterValue
FET TypeN-Channel
Vgs (Max)±12V
TechnologyMOSFET (Metal Oxide)
Mounting TypeSurface Mount
PackageTSSOP-8

Key Features

  • High switching speed and low on-resistance, making it efficient for high-frequency applications.
  • Compact TSSOP-8 package, ideal for space-constrained designs.
  • Robust and reliable performance in a variety of operating conditions.
  • Low gate charge and low input capacitance, reducing switching losses.

Applications

The MCH3478-TL-W is versatile and can be used in various applications, including:

  • Power management systems
  • Motor control circuits
  • Switching power supplies
  • Automotive electronics
  • Consumer electronics

Q & A

  1. What is the FET type of the MCH3478-TL-W? The MCH3478-TL-W is an N-Channel MOSFET.
  2. What is the maximum gate-source voltage (Vgs) for the MCH3478-TL-W? The maximum Vgs is ±12V.
  3. What is the mounting type of the MCH3478-TL-W? The MCH3478-TL-W is a surface-mount device.
  4. What package type does the MCH3478-TL-W come in? The MCH3478-TL-W comes in a TSSOP-8 package.
  5. What are some common applications for the MCH3478-TL-W? Common applications include power management systems, motor control circuits, switching power supplies, automotive electronics, and consumer electronics.
  6. Why is the MCH3478-TL-W preferred in high-frequency applications? It is preferred due to its high switching speed and low on-resistance.
  7. What are the benefits of the compact TSSOP-8 package? The compact package is ideal for space-constrained designs, allowing for more efficient use of board space.
  8. How does the MCH3478-TL-W reduce switching losses? It reduces switching losses through its low gate charge and low input capacitance.
  9. Is the MCH3478-TL-W suitable for automotive applications? Yes, it is suitable for automotive electronics due to its robust and reliable performance.
  10. Where can I find detailed specifications for the MCH3478-TL-W? Detailed specifications can be found on the datasheet available from sources like Digi-Key, Mouser, and the official onsemi website.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:165mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:1.7 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:130 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):800mW (Ta)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:3-MCPH
Package / Case:SC-70, SOT-323
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Same Series
MCH3478-TL-H
MCH3478-TL-H
MOSFET N-CH 30V 2A 3MCPH

Similar Products

Part Number MCH3478-TL-W MCH3474-TL-W MCH3475-TL-W MCH3476-TL-W MCH3477-TL-W MCH3478-TL-H
Manufacturer onsemi onsemi onsemi Fairchild Semiconductor onsemi onsemi
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V 20 V 20 V 30 V
Current - Continuous Drain (Id) @ 25°C 2A (Ta) 4A (Ta) 1.8A (Ta) 2A (Ta) 4.5A (Ta) 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 1.8V, 4.5V 4V, 10V - 1.8V, 4.5V 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 165mOhm @ 1A, 4.5V 50mOhm @ 2A, 4.5V 180mOhm @ 900mA, 10V 125mOhm @ 1A, 4.5V 38mOhm @ 2A, 4.5V 165mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id - 1.3V @ 1mA 2.6V @ 1mA 1.3V @ 1mA 1.3V @ 1mA -
Gate Charge (Qg) (Max) @ Vgs 1.7 nC @ 4.5 V 4.7 nC @ 4.5 V 2 nC @ 10 V 1.8 nC @ 4.5 V 5.1 nC @ 4.5 V 1.7 nC @ 4.5 V
Vgs (Max) ±12V ±12V ±20V ±12V ±12V ±12V
Input Capacitance (Ciss) (Max) @ Vds 130 pF @ 10 V 430 pF @ 10 V 88 pF @ 10 V 128 pF @ 10 V 410 pF @ 10 V 130 pF @ 10 V
FET Feature - - - - - -
Power Dissipation (Max) 800mW (Ta) 1W (Ta) 800mW (Ta) 800mW (Ta) 1W (Ta) 800mW (Ta)
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 3-MCPH SC-70FL/MCPH3 SC-70FL/MCPH3 SC-70FL/MCPH3 SC-70FL/MCPH3 3-MCPH
Package / Case SC-70, SOT-323 SOT-23-3 Flat Leads SOT-23-3 Flat Leads 3-SMD, Flat Lead SOT-23-3 Flat Leads SC-70, SOT-323

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