CSD18534Q5AT
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Texas Instruments CSD18534Q5AT

Manufacturer No:
CSD18534Q5AT
Manufacturer:
Texas Instruments
Package:
Tape & Reel (TR)
Description:
MOSFET N-CHANNEL 60V 50A 8VSON
Delivery:
Payment:
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Product Introduction

Overview

The CSD18534Q5A, produced by Texas Instruments, is a 60-V N-channel NexFET™ power MOSFET. This device is designed to minimize losses in power conversion applications, making it an ideal choice for various high-efficiency power management systems. It features a small SON 5 mm × 6 mm plastic package, which enhances thermal performance and reduces space requirements in modern electronic designs.

Key Specifications

Parameter Value Unit
Drain-to-Source Voltage (VDS) 60 V
Drain-to-Source On-Resistance (RDS(on)) at VGS = 10 V 7.8 mΩ
Drain-to-Source On-Resistance (RDS(on)) at VGS = 4.5 V 9.9 mΩ
Gate Charge Total (Qg) at VGS = 10 V 17 nC
Gate Charge Gate-to-Drain (Qgd) at VGS = 10 V 3.5 nC
Threshold Voltage (VGS(th)) 1.9 V
Package Type SON 5 mm × 6 mm
Operating Temperature Range -55 to 150 °C

Key Features

  • Ultra-Low Qg and Qgd for reduced switching losses
  • Low Thermal Resistance for improved heat dissipation
  • Avalanche Rated for robustness in high-stress applications
  • Logic Level Gate Drive for compatibility with various control signals
  • Pb Free Terminal Plating and RoHS Compliant for environmental compliance
  • Halogen Free to meet stringent environmental standards

Applications

  • DC-DC Conversion: Ideal for high-efficiency power conversion applications
  • Secondary Side Synchronous Rectifier: Optimized for synchronous rectification in power supplies
  • Isolated Converter Primary Side Switch: Suitable for primary side switching in isolated converters
  • Motor Control: Used in motor control applications requiring high efficiency and reliability

Q & A

  1. What is the maximum drain-to-source voltage (VDS) of the CSD18534Q5A?

    The maximum drain-to-source voltage (VDS) is 60 V.

  2. What is the typical on-state resistance (RDS(on)) at VGS = 10 V?

    The typical on-state resistance (RDS(on)) at VGS = 10 V is 7.8 mΩ.

  3. What is the gate charge total (Qg) at VGS = 10 V?

    The gate charge total (Qg) at VGS = 10 V is 17 nC.

  4. Is the CSD18534Q5A RoHS compliant?
  5. What is the package type of the CSD18534Q5A?

    The package type is SON 5 mm × 6 mm.

  6. What are the typical applications of the CSD18534Q5A?

    The typical applications include DC-DC conversion, secondary side synchronous rectifier, isolated converter primary side switch, and motor control.

  7. What is the operating temperature range of the CSD18534Q5A?

    The operating temperature range is -55 to 150°C.

  8. Is the CSD18534Q5A halogen free?
  9. What is the threshold voltage (VGS(th)) of the CSD18534Q5A?

    The threshold voltage (VGS(th)) is 1.9 V.

  10. Is the CSD18534Q5A Pb free?

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:50A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:9.8mOhm @ 14A, 10V
Vgs(th) (Max) @ Id:2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:11.1 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1770 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):3.1W (Ta), 77W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-VSONP (5x6)
Package / Case:8-PowerTDFN
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Similar Products

Part Number CSD18534Q5AT CSD19534Q5AT CSD18504Q5AT CSD18514Q5AT CSD18531Q5AT CSD18533Q5AT CSD18534Q5A
Manufacturer Texas Instruments Texas Instruments Texas Instruments Texas Instruments Texas Instruments Texas Instruments Texas Instruments
Product Status Active Active Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 100 V 40 V 40 V 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 50A (Ta) 50A (Ta) 50A (Ta) 89A (Tc) 100A (Ta) 17A (Ta), 100A (Tc) 13A (Ta), 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 6V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 9.8mOhm @ 14A, 10V 15.1mOhm @ 10A, 10V 6.6mOhm @ 17A, 10V 7.9mOhm @ 15A, 10V 4.6mOhm @ 22A, 10V 5.9mOhm @ 18A, 10V 9.8mOhm @ 14A, 10V
Vgs(th) (Max) @ Id 2.3V @ 250µA 3.4V @ 250µA 2.4V @ 250µA 2.4V @ 250µA 2.3V @ 250µA 2.3V @ 250µA 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 11.1 nC @ 4.5 V 22 nC @ 10 V 9.2 nC @ 4.5 V 40 nC @ 10 V 43 nC @ 10 V 36 nC @ 10 V 22 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1770 pF @ 30 V 1680 pF @ 50 V 1656 pF @ 20 V 2683 pF @ 20 V 3840 pF @ 30 V 2750 pF @ 30 V 1770 pF @ 30 V
FET Feature - - - - - - -
Power Dissipation (Max) 3.1W (Ta), 77W (Tc) 3.2W (Ta), 63W (Tc) 3.1W (Ta), 77W (Tc) 74W (Tc) 3.1W (Ta), 156W (Tc) 3.2W (Ta), 116W (Tc) 3.1W (Ta), 77W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-VSONP (5x6) 8-VSONP (5x6) 8-VSONP (5x6) 8-VSONP (5x6) 8-VSONP (5x6) 8-VSONP (5x6) 8-VSONP (5x6)
Package / Case 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN

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