Overview
The CSD19534Q5AT is a 100 V N-Channel NexFET™ power MOSFET produced by Texas Instruments. This device is designed to minimize losses in power conversion applications, offering ultra-low gate charge (Qg) and low thermal resistance. It is packaged in a SON 5 mm x 6 mm plastic package, making it suitable for a variety of high-performance applications.
Key Specifications
| Parameter | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| BVDSS - Drain-to-Source Voltage | VGS = 0 V, ID = 250 μA | 100 | - | 100 | V |
| IDSS - Drain-to-Source Leakage Current | VGS = 0 V, VDS = 80 V | - | - | 1 | μA |
| IGSS - Gate-to-Source Leakage Current | VDS = 0 V, VGS = 20 V | - | - | 100 | nA |
| VGS(th) - Gate-to-Source Threshold Voltage | VDS = VGS, ID = 250 μA | 2.4 | 2.8 | 3.4 | V |
| RDS(on) - Drain-to-Source On Resistance | VGS = 10 V, ID = 10 A | 12.6 | - | 15.1 | mΩ |
| Qg - Gate Charge Total (10 V) | - | 17 | - | 22 | nC |
| Qgd - Gate Charge Gate to Drain | - | 3.2 | - | - | nC |
Key Features
- Ultra-Low Qg and Qgd: Minimizes switching losses and improves efficiency in power conversion applications.
- Low Thermal Resistance: Ensures reliable operation in high-power applications.
- Avalanche Rated: Capable of withstanding high-energy pulses.
- Pb-Free Terminal Plating and RoHS Compliant: Environmentally friendly and compliant with regulatory standards.
- Halogen Free: Reduces environmental impact.
- SON 5 mm x 6 mm Plastic Package: Compact and suitable for high-density designs.
Applications
- Primary Side Telecom Devices: Suitable for high-power telecom applications.
- Motor Control: Used in motor drive systems due to its high current and voltage handling capabilities.
Q & A
- What is the maximum drain-to-source voltage (VDS) of the CSD19534Q5AT?
The maximum drain-to-source voltage (VDS) is 100 V.
- What is the typical on-state resistance (RDS(on)) of the CSD19534Q5AT?
The typical on-state resistance (RDS(on)) is 12.6 mΩ at VGS = 10 V and ID = 10 A.
- What is the gate-to-source threshold voltage (VGS(th)) of the CSD19534Q5AT?
The gate-to-source threshold voltage (VGS(th)) is typically 2.8 V.
- Is the CSD19534Q5AT RoHS compliant?
- What is the package type of the CSD19534Q5AT?
The package type is SON 5 mm x 6 mm plastic package.
- What are the typical applications of the CSD19534Q5AT?
Typical applications include primary side telecom devices and motor control systems.
- What is the maximum gate charge (Qg) of the CSD19534Q5AT?
The maximum gate charge (Qg) is 22 nC.
- Is the CSD19534Q5AT halogen-free?
- What is the thermal resistance (RθJA) of the CSD19534Q5AT when mounted on a minimum pad area?
The thermal resistance (RθJA) is 50°C/W when mounted on a 1 inch^2 (6.45 cm^2) of 2-oz. (0.071-mm thick) Cu.
- What is the reverse recovery time (trr) of the CSD19534Q5AT?
The reverse recovery time (trr) is 53 ns.
