Overview
The CSD19534Q5A is a 100 V, N-Channel NexFET™ power MOSFET produced by Texas Instruments. This device is designed to minimize losses in power conversion applications, making it an ideal choice for high-efficiency power management systems. The MOSFET features a low on-state resistance and ultra-low gate charge, which contribute to its high performance and efficiency.
Key Specifications
| Parameter | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| BVDSS - Drain-to-Source Voltage | VGS = 0 V, ID = 250 μA | 100 | 100 | V | |
| IDSS - Drain-to-Source Leakage Current | VGS = 0 V, VDS = 80 V | 1 | μA | ||
| IGSS - Gate-to-Source Leakage Current | VDS = 0 V, VGS = 20 V | 100 | nA | ||
| VGS(th) - Gate-to-Source Threshold Voltage | VDS = VGS, ID = 250 μA | 2.4 | 2.8 | 3.4 | V |
| RDS(on) - Drain-to-Source On Resistance | VGS = 10 V, ID = 10 A | 12.6 | 15.1 | mΩ | |
| Qg - Gate Charge Total (10 V) | 17 | nC | |||
| Qgd - Gate Charge Gate to Drain | 3.2 | nC |
Key Features
- Ultra-Low Qg and Qgd: The MOSFET has a total gate charge (Qg) of 17 nC and a gate-to-drain charge (Qgd) of 3.2 nC, which helps in reducing switching losses.
- Low Thermal Resistance: Designed to handle high thermal loads efficiently.
- Avalanche Rated: The device is rated for avalanche conditions, ensuring robust performance under transient conditions.
- Pb-Free Terminal Plating and RoHS Compliant: Environmentally friendly and compliant with regulatory standards.
- Halogen Free: Free from halogen, making it suitable for applications requiring minimal environmental impact.
- SON 5 mm × 6 mm Plastic Package: Compact package size suitable for space-constrained designs.
Applications
- Primary Side Telecom Devices: Suitable for power management in telecom equipment.
- Motor Control: Used in motor control applications due to its high efficiency and reliability.
Q & A
- What is the maximum drain-to-source voltage (VDS) of the CSD19534Q5A? The maximum VDS is 100 V.
- What is the typical on-state resistance (RDS(on)) of the CSD19534Q5A? The typical RDS(on) is 12.6 mΩ at VGS = 10 V and ID = 10 A.
- What are the ultra-low gate charges (Qg and Qgd) of the CSD19534Q5A? The total gate charge (Qg) is 17 nC, and the gate-to-drain charge (Qgd) is 3.2 nC.
- Is the CSD19534Q5A RoHS compliant and halogen-free? Yes, it is both RoHS compliant and halogen-free.
- What is the package type and size of the CSD19534Q5A? The package is a SON 5 mm × 6 mm plastic package.
- What are the typical applications of the CSD19534Q5A? It is typically used in primary side telecom devices and motor control applications.
- What is the gate-to-source threshold voltage (VGS(th)) of the CSD19534Q5A? The VGS(th) is between 2.4 V and 3.4 V.
- Is the CSD19534Q5A avalanche rated? Yes, it is avalanche rated.
- What is the operating temperature range of the CSD19534Q5A? The operating temperature range is -55°C to 150°C.
- What is the typical transconductance (gfs) of the CSD19534Q5A? The typical transconductance is 47 S at VDS = 10 V and ID = 10 A.
