Overview
The CSD19533Q5A, manufactured by Texas Instruments, is a high-performance N-Channel Power MOSFET designed for a variety of power management applications. This MOSFET is part of the NexFET™ series, known for its efficiency and reliability in power conversion and switching tasks. With a 100V drain-source voltage and a low on-resistance of 7.8mΩ, it is optimized for high-current applications. The CSD19533Q5A is packaged in a compact VSONP-8 form factor, making it suitable for space-constrained designs. Its robust thermal performance and high power dissipation capability make it ideal for industrial, automotive, and consumer electronics applications.
Key Specifications
| Parameter | Value | Unit | Notes |
|---|---|---|---|
| Manufacturer | Texas Instruments | - | - |
| Product Category | MOSFET | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | VSONP-8 | - | - |
| Number of Channels | 1 | Channel | - |
| Transistor Polarity | N-Channel | - | - |
| Drain-Source Voltage (Vds) | 100 | V | - |
| Continuous Drain Current (Id) | 100 | A | - |
| Drain-Source On-Resistance (Rds On) | 7.8 | mΩ | - |
| Gate-Source Threshold Voltage (Vgs th) | 2.2 | V | - |
| Gate-Source Voltage (Vgs) | 10 | V | - |
| Gate Charge (Qg) | 27 | nC | - |
| Minimum Operating Temperature | -55 | °C | - |
| Maximum Operating Temperature | +150 | °C | - |
| Power Dissipation (Pd) | 96 | W | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Brand Name | NexFET™ | - | - |
| Height | 1 | mm | - |
| Length | 6 | mm | - |
| Width | 4.9 | mm | - |
| Fall Time | 5 | ns | - |
| Rise Time | 6 | ns | - |
| Typical Turn-Off Delay Time | 16 | ns | - |
| Typical Turn-On Delay Time | 6 | ns | - |
Key Features
- Low on-resistance (Rds On) of 7.8mΩ for efficient power handling.
- High drain-source voltage (Vds) of 100V, suitable for robust applications.
- Compact VSONP-8 package ideal for space-constrained designs.
- High continuous drain current (Id) of 100A for high-power applications.
- Wide operating temperature range from -55°C to +150°C for versatility in harsh environments.
- Enhanced thermal performance with a power dissipation capability of 96W.
Applications
The CSD19533Q5A is widely used in various industries due to its high efficiency and reliability. Key application areas include:
- Industrial Automation: Power management in motor drives, robotics, and control systems.
- Automotive Electronics: Electric vehicle power systems, battery management, and lighting controls.
- Consumer Electronics: Power supplies, inverters, and portable devices.
- Renewable Energy: Solar inverters and wind turbine power systems.
Q & A
1. What is the maximum drain-source voltage of the CSD19533Q5A?
The maximum drain-source voltage (Vds) is 100V.
2. What is the typical on-resistance of this MOSFET?
The typical drain-source on-resistance (Rds On) is 7.8mΩ.
3. What is the continuous drain current rating?
The continuous drain current (Id) is rated at 100A.
4. What is the operating temperature range?
The operating temperature range is from -55°C to +150°C.
5. What package does the CSD19533Q5A come in?
It is packaged in a VSONP-8 form factor.
6. What is the gate-source threshold voltage?
The gate-source threshold voltage (Vgs th) is 2.2V.
7. Is this MOSFET suitable for automotive applications?
Yes, it is suitable for automotive electronics, including electric vehicle power systems.
8. What is the power dissipation capability?
The power dissipation (Pd) is 96W.
9. What is the typical turn-off delay time?
The typical turn-off delay time is 16ns.
10. Can this MOSFET be used in industrial automation?
Yes, it is ideal for industrial automation applications such as motor drives and control systems.
