CSD19533Q5AT
  • Share:

Texas Instruments CSD19533Q5AT

Manufacturer No:
CSD19533Q5AT
Manufacturer:
Texas Instruments
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 100A 8VSON
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The CSD19533Q5AT is a high-performance N-channel NexFET™ power MOSFET manufactured by Texas Instruments. Designed for power conversion applications, this MOSFET features a compact 5mm x 6mm SON package and is optimized to minimize power losses. With a drain-source voltage (VDS) rating of 100V and a low on-resistance (RDS(on)) of 7.8mΩ, it is ideal for high-efficiency power management in industrial, automotive, and consumer electronics. Its advanced design ensures superior thermal performance and reliability, making it a competitive choice for demanding applications.

Key Specifications

ParameterValueUnitNotes
Drain-Source Voltage (VDS)100V
Continuous Drain Current (ID)100APackage limited
On-Resistance (RDS(on))7.8mΩat VGS = 10V
Gate-Source Voltage (VGS)±20V
Total Gate Charge (QG)27nCTypical
Gate Threshold Voltage (VGS(th))2.8VTypical
PackageSON 5x6
Thermal Resistance (RθJA)40°C/WTypical

Key Features

  • Ultra-low gate charge (QG) and gate-drain charge (QGD) for fast switching.
  • Low thermal resistance ensures efficient heat dissipation.
  • Avalanche rated for robust performance in high-stress conditions.
  • Lead-free and RoHS compliant, meeting environmental standards.
  • Halogen-free design for enhanced safety and sustainability.

Applications

The CSD19533Q5AT is widely used in power conversion and management systems. Its applications include:

  • Industrial Automation: Motor control and power supply units.
  • Telecommunications: Primary and secondary side power management.
  • Automotive Electronics: Battery management systems and DC-DC converters.
  • Consumer Electronics: High-efficiency power adapters and inverters.

Q & A

1. What is the maximum drain-source voltage of the CSD19533Q5AT?

The maximum drain-source voltage is 100V.

2. What is the typical on-resistance of this MOSFET?

The typical on-resistance is 7.8mΩ at VGS = 10V.

3. Is the CSD19533Q5AT RoHS compliant?

Yes, it is lead-free and RoHS compliant.

4. What is the gate threshold voltage?

The typical gate threshold voltage is 2.8V.

5. What package does this MOSFET use?

It uses a 5mm x 6mm SON package.

6. What is the maximum continuous drain current?

The maximum continuous drain current is 100A, limited by the package.

7. What are the typical applications of this MOSFET?

Typical applications include motor control, power supplies, and DC-DC converters.

8. What is the total gate charge?

The total gate charge is typically 27nC.

9. Is this MOSFET suitable for automotive applications?

Yes, it is suitable for automotive electronics such as battery management systems.

10. What is the thermal resistance of this MOSFET?

The typical thermal resistance (RθJA) is 40°C/W.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:100A (Ta)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:9.4mOhm @ 13A, 10V
Vgs(th) (Max) @ Id:3.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:35 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2670 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):3.2W (Ta), 96W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-VSONP (5x6)
Package / Case:8-PowerTDFN
0 Remaining View Similar

In Stock

$1.73
505

Please send RFQ , we will respond immediately.

Same Series
RD15S10HV30/AA
RD15S10HV30/AA
CONN D-SUB RCPT 15POS CRIMP
RD15S10HE30/AA
RD15S10HE30/AA
CONN D-SUB RCPT 15POS CRIMP
CBC13W3S10HT20/AA
CBC13W3S10HT20/AA
CONN D-SUB RCPT 13POS CRIMP
CBC13W3S10HE30/AA
CBC13W3S10HE30/AA
CONN D-SUB RCPT 13POS CRIMP
CBC9W4S10HTS/AA
CBC9W4S10HTS/AA
CONN D-SUB RCPT 9POS CRIMP
DD26S2S0V5X/AA
DD26S2S0V5X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
CBC13W3S10HV3S/AA
CBC13W3S10HV3S/AA
CONN D-SUB RCPT 13POS CRIMP
DD26S10HV50/AA
DD26S10HV50/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD26S2S50V5X
DD26S2S50V5X
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S000
DD44S32S000
CONN D-SUB HD RCPT 44P VERT SLDR
RD50S1S50V50
RD50S1S50V50
CONN D-SUB RCPT 50POS CRIMP
DD26S20WE3X
DD26S20WE3X
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number CSD19533Q5AT CSD19534Q5AT CSD18533Q5AT CSD19531Q5AT CSD19533Q5A
Manufacturer Texas Instruments Texas Instruments Texas Instruments Texas Instruments Texas Instruments
Product Status Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 60 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 100A (Ta) 50A (Ta) 17A (Ta), 100A (Tc) 100A (Ta) 100A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V 4.5V, 10V 6V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 9.4mOhm @ 13A, 10V 15.1mOhm @ 10A, 10V 5.9mOhm @ 18A, 10V 6.4mOhm @ 16A, 10V 9.4mOhm @ 13A, 10V
Vgs(th) (Max) @ Id 3.4V @ 250µA 3.4V @ 250µA 2.3V @ 250µA 3.3V @ 250µA 3.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 10 V 22 nC @ 10 V 36 nC @ 10 V 48 nC @ 10 V 35 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2670 pF @ 50 V 1680 pF @ 50 V 2750 pF @ 30 V 3870 pF @ 50 V 2670 pF @ 50 V
FET Feature - - - - -
Power Dissipation (Max) 3.2W (Ta), 96W (Tc) 3.2W (Ta), 63W (Tc) 3.2W (Ta), 116W (Tc) 3.3W (Ta), 125W (Tc) 3.2W (Ta), 96W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-VSONP (5x6) 8-VSONP (5x6) 8-VSONP (5x6) 8-VSONP (5x6) 8-VSONP (5x6)
Package / Case 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN

Related Product By Categories

STP20NM50
STP20NM50
STMicroelectronics
MOSFET N-CH 500V 20A TO220AB
VN2222LL-G-P003
VN2222LL-G-P003
Microchip Technology
MOSFET N-CH 60V 230MA TO92-3
2N7002-TP
2N7002-TP
Micro Commercial Co
MOSFET N-CH 60V 115MA SOT23
STN1NK80Z
STN1NK80Z
STMicroelectronics
MOSFET N-CH 800V 250MA SOT223
FDBL86361-F085
FDBL86361-F085
onsemi
MOSFET N-CH 80V 300A 8HPSOF
STD60NF06T4
STD60NF06T4
STMicroelectronics
MOSFET N-CH 60V 60A DPAK
PMCXB900UE147
PMCXB900UE147
NXP USA Inc.
SMALL SIGNAL FET
STW88N65M5-4
STW88N65M5-4
STMicroelectronics
MOSFET N-CH 650V 84A TO247-4L
FQB34P10TM-F085
FQB34P10TM-F085
onsemi
MOSFET P-CH 100V 33.5A D2PAK
STP24N65M2
STP24N65M2
STMicroelectronics
MOSFET N-CH 650V 16A TO220
IRF7416TRPBF-1
IRF7416TRPBF-1
Infineon Technologies
MOSFET P-CH 30V 10A 8SO
NTNS3A65PZT5GHW
NTNS3A65PZT5GHW
onsemi
MOSFET P-CH 20V 281MA SOT883

Related Product By Brand

TLV5535IPWR
TLV5535IPWR
Texas Instruments
IC ADC 8BIT PIPELINED 28TSSOP
TS3A44159PWR
TS3A44159PWR
Texas Instruments
IC SWITCH QUAD SPDT 16TSSOP
DS90LV048ATMTCX/NOPB
DS90LV048ATMTCX/NOPB
Texas Instruments
IC RECEIVER 0/4 16TSSOP
TRS208IDWR
TRS208IDWR
Texas Instruments
IC TRANSCEIVER FULL 4/4 24SOIC
TLV2316IDR
TLV2316IDR
Texas Instruments
IC CMOS 2 CIRCUIT 8SOIC
SN74HCT244NSR
SN74HCT244NSR
Texas Instruments
IC BUFFER NON-INVERT 5.5V 20SO
SN74AHC244QPWRQ1
SN74AHC244QPWRQ1
Texas Instruments
IC BUF NON-INVERT 5.5V 20TSSOP
SN74LVC1G97DBVR
SN74LVC1G97DBVR
Texas Instruments
IC CONFIG MULT-FUNC GATE SOT23-6
TL4050B41IDBZRG4
TL4050B41IDBZRG4
Texas Instruments
IC VREF SHUNT 0.2% SOT23-3
TLV73333PQDBVRQ1
TLV73333PQDBVRQ1
Texas Instruments
IC REG LINEAR 3.3V 300MA SOT23-5
LP2985AITL-3.3/NOPB
LP2985AITL-3.3/NOPB
Texas Instruments
IC REG LINEAR 3.3V 150MA 5DSBGA
TMP709AIDBVR
TMP709AIDBVR
Texas Instruments
THERMOSTAT PROG ACT LOW SOT23-5