CSD19533Q5AT
  • Share:

Texas Instruments CSD19533Q5AT

Manufacturer No:
CSD19533Q5AT
Manufacturer:
Texas Instruments
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 100A 8VSON
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The CSD19533Q5AT is a high-performance N-channel NexFET™ power MOSFET manufactured by Texas Instruments. Designed for power conversion applications, this MOSFET features a compact 5mm x 6mm SON package and is optimized to minimize power losses. With a drain-source voltage (VDS) rating of 100V and a low on-resistance (RDS(on)) of 7.8mΩ, it is ideal for high-efficiency power management in industrial, automotive, and consumer electronics. Its advanced design ensures superior thermal performance and reliability, making it a competitive choice for demanding applications.

Key Specifications

ParameterValueUnitNotes
Drain-Source Voltage (VDS)100V
Continuous Drain Current (ID)100APackage limited
On-Resistance (RDS(on))7.8at VGS = 10V
Gate-Source Voltage (VGS)±20V
Total Gate Charge (QG)27nCTypical
Gate Threshold Voltage (VGS(th))2.8VTypical
PackageSON 5x6
Thermal Resistance (RθJA)40°C/WTypical

Key Features

  • Ultra-low gate charge (QG) and gate-drain charge (QGD) for fast switching.
  • Low thermal resistance ensures efficient heat dissipation.
  • Avalanche rated for robust performance in high-stress conditions.
  • Lead-free and RoHS compliant, meeting environmental standards.
  • Halogen-free design for enhanced safety and sustainability.

Applications

The CSD19533Q5AT is widely used in power conversion and management systems. Its applications include:

  • Industrial Automation: Motor control and power supply units.
  • Telecommunications: Primary and secondary side power management.
  • Automotive Electronics: Battery management systems and DC-DC converters.
  • Consumer Electronics: High-efficiency power adapters and inverters.

Q & A

1. What is the maximum drain-source voltage of the CSD19533Q5AT?

The maximum drain-source voltage is 100V.

2. What is the typical on-resistance of this MOSFET?

The typical on-resistance is 7.8mΩ at VGS = 10V.

3. Is the CSD19533Q5AT RoHS compliant?

Yes, it is lead-free and RoHS compliant.

4. What is the gate threshold voltage?

The typical gate threshold voltage is 2.8V.

5. What package does this MOSFET use?

It uses a 5mm x 6mm SON package.

6. What is the maximum continuous drain current?

The maximum continuous drain current is 100A, limited by the package.

7. What are the typical applications of this MOSFET?

Typical applications include motor control, power supplies, and DC-DC converters.

8. What is the total gate charge?

The total gate charge is typically 27nC.

9. Is this MOSFET suitable for automotive applications?

Yes, it is suitable for automotive electronics such as battery management systems.

10. What is the thermal resistance of this MOSFET?

The typical thermal resistance (RθJA) is 40°C/W.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:100A (Ta)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:9.4mOhm @ 13A, 10V
Vgs(th) (Max) @ Id:3.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:35 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2670 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):3.2W (Ta), 96W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-VSONP (5x6)
Package / Case:8-PowerTDFN
0 Remaining View Similar

In Stock

$1.73
505

Please send RFQ , we will respond immediately.

Same Series
DD15S20LVL0/AA
DD15S20LVL0/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20WES/AA
DD15S20WES/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S200V5S/AA
DD15S200V5S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20J0S
DD15S20J0S
CONN D-SUB HD RCPT 15P SLDR CUP
CBC46W4S1S500S
CBC46W4S1S500S
CONN D-SUB RCPT 46POS CRIMP
DD44S32S0TS/AA
DD44S32S0TS/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S10HT20/AA
DD26S10HT20/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD44S32000X
DD44S32000X
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S200V5X
DD26S200V5X
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S000
DD44S32S000
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20WTX
DD26S20WTX
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S50TX/AA
DD44S32S50TX/AA
CONN D-SUB HD RCPT 44P VERT SLDR

Similar Products

Part Number CSD19533Q5AT CSD19534Q5AT CSD18533Q5AT CSD19531Q5AT CSD19533Q5A
Manufacturer Texas Instruments Texas Instruments Texas Instruments Texas Instruments Texas Instruments
Product Status Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 60 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 100A (Ta) 50A (Ta) 17A (Ta), 100A (Tc) 100A (Ta) 100A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V 4.5V, 10V 6V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 9.4mOhm @ 13A, 10V 15.1mOhm @ 10A, 10V 5.9mOhm @ 18A, 10V 6.4mOhm @ 16A, 10V 9.4mOhm @ 13A, 10V
Vgs(th) (Max) @ Id 3.4V @ 250µA 3.4V @ 250µA 2.3V @ 250µA 3.3V @ 250µA 3.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 10 V 22 nC @ 10 V 36 nC @ 10 V 48 nC @ 10 V 35 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2670 pF @ 50 V 1680 pF @ 50 V 2750 pF @ 30 V 3870 pF @ 50 V 2670 pF @ 50 V
FET Feature - - - - -
Power Dissipation (Max) 3.2W (Ta), 96W (Tc) 3.2W (Ta), 63W (Tc) 3.2W (Ta), 116W (Tc) 3.3W (Ta), 125W (Tc) 3.2W (Ta), 96W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-VSONP (5x6) 8-VSONP (5x6) 8-VSONP (5x6) 8-VSONP (5x6) 8-VSONP (5x6)
Package / Case 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN

Related Product By Categories

NTNS3193NZT5G
NTNS3193NZT5G
onsemi
MOSFET N-CH 20V 224MA 3XLLGA
IRLML0040TRPBF
IRLML0040TRPBF
Infineon Technologies
MOSFET N-CH 40V 3.6A SOT23
FQT7N10LTF
FQT7N10LTF
onsemi
MOSFET N-CH 100V 1.7A SOT223-4
FCD380N60E
FCD380N60E
onsemi
MOSFET N-CH 600V 10.2A DPAK
NTMFS5C646NLT1G
NTMFS5C646NLT1G
onsemi
MOSFET N-CH 60V 19A 5DFN
MVGSF1N02LT1G
MVGSF1N02LT1G
onsemi
MOSFET N-CH 20V 750MA SOT23-3
FQA70N10
FQA70N10
onsemi
MOSFET N-CH 100V 70A TO3PN
STF13N65M2
STF13N65M2
STMicroelectronics
MOSFET N-CH 650V 10A TO220FP
STD5N52K3
STD5N52K3
STMicroelectronics
MOSFET N-CH 525V 4.4A DPAK
STP18N60M2
STP18N60M2
STMicroelectronics
MOSFET N-CH 600V 13A TO220
NTD3055-094-1
NTD3055-094-1
onsemi
MOSFET N-CH 60V 12A IPAK
STW6N120K3
STW6N120K3
STMicroelectronics
MOSFET N-CH 1200V 6A TO247

Related Product By Brand

SRC4192IDBR
SRC4192IDBR
Texas Instruments
IC SAMPLE RATE CONVERTER 28SSOP
LMC555CMX
LMC555CMX
Texas Instruments
IC OSC SINGLE TIMER 3MHZ 8-SOIC
TLV5535IPWR
TLV5535IPWR
Texas Instruments
IC ADC 8BIT PIPELINED 28TSSOP
MSP430G2332IPW14R
MSP430G2332IPW14R
Texas Instruments
IC MCU 16BIT 4KB FLASH 14TSSOP
TS3USB221RSER
TS3USB221RSER
Texas Instruments
IC USB SWITCH DUAL 1X2 10UQFN
MAX3232EIDBE4
MAX3232EIDBE4
Texas Instruments
IC TRANSCEIVER FULL 2/2 16SSOP
OPA4277UA/2K5
OPA4277UA/2K5
Texas Instruments
IC OPAMP GP 4 CIRCUIT 14SOIC
SN74LVC2G240DCUR
SN74LVC2G240DCUR
Texas Instruments
IC BUFFER INVERT 5.5V 8VSSOP
TPS26610DDFR
TPS26610DDFR
Texas Instruments
50-V, UNIVERSAL 4-20-MA, 20-MA C
TPS54357PWP
TPS54357PWP
Texas Instruments
IC REG BUCK 5V 3A 16HTSSOP
TLV73333PQDBVRQ1
TLV73333PQDBVRQ1
Texas Instruments
IC REG LINEAR 3.3V 300MA SOT23-5
TPS7B8601QKVURQ1
TPS7B8601QKVURQ1
Texas Instruments
AUTOMOTIVE 500-MA, 40-V, ULTRA-L