CSD19533Q5AT
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Texas Instruments CSD19533Q5AT

Manufacturer No:
CSD19533Q5AT
Manufacturer:
Texas Instruments
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 100A 8VSON
Delivery:
Payment:
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Product Introduction

Overview

The CSD19533Q5AT is a high-performance N-channel NexFET™ power MOSFET manufactured by Texas Instruments. Designed for power conversion applications, this MOSFET features a compact 5mm x 6mm SON package and is optimized to minimize power losses. With a drain-source voltage (VDS) rating of 100V and a low on-resistance (RDS(on)) of 7.8mΩ, it is ideal for high-efficiency power management in industrial, automotive, and consumer electronics. Its advanced design ensures superior thermal performance and reliability, making it a competitive choice for demanding applications.

Key Specifications

ParameterValueUnitNotes
Drain-Source Voltage (VDS)100V
Continuous Drain Current (ID)100APackage limited
On-Resistance (RDS(on))7.8mΩat VGS = 10V
Gate-Source Voltage (VGS)±20V
Total Gate Charge (QG)27nCTypical
Gate Threshold Voltage (VGS(th))2.8VTypical
PackageSON 5x6
Thermal Resistance (RθJA)40°C/WTypical

Key Features

  • Ultra-low gate charge (QG) and gate-drain charge (QGD) for fast switching.
  • Low thermal resistance ensures efficient heat dissipation.
  • Avalanche rated for robust performance in high-stress conditions.
  • Lead-free and RoHS compliant, meeting environmental standards.
  • Halogen-free design for enhanced safety and sustainability.

Applications

The CSD19533Q5AT is widely used in power conversion and management systems. Its applications include:

  • Industrial Automation: Motor control and power supply units.
  • Telecommunications: Primary and secondary side power management.
  • Automotive Electronics: Battery management systems and DC-DC converters.
  • Consumer Electronics: High-efficiency power adapters and inverters.

Q & A

1. What is the maximum drain-source voltage of the CSD19533Q5AT?

The maximum drain-source voltage is 100V.

2. What is the typical on-resistance of this MOSFET?

The typical on-resistance is 7.8mΩ at VGS = 10V.

3. Is the CSD19533Q5AT RoHS compliant?

Yes, it is lead-free and RoHS compliant.

4. What is the gate threshold voltage?

The typical gate threshold voltage is 2.8V.

5. What package does this MOSFET use?

It uses a 5mm x 6mm SON package.

6. What is the maximum continuous drain current?

The maximum continuous drain current is 100A, limited by the package.

7. What are the typical applications of this MOSFET?

Typical applications include motor control, power supplies, and DC-DC converters.

8. What is the total gate charge?

The total gate charge is typically 27nC.

9. Is this MOSFET suitable for automotive applications?

Yes, it is suitable for automotive electronics such as battery management systems.

10. What is the thermal resistance of this MOSFET?

The typical thermal resistance (RθJA) is 40°C/W.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:100A (Ta)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:9.4mOhm @ 13A, 10V
Vgs(th) (Max) @ Id:3.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:35 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2670 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):3.2W (Ta), 96W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-VSONP (5x6)
Package / Case:8-PowerTDFN
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Similar Products

Part Number CSD19533Q5AT CSD19534Q5AT CSD18533Q5AT CSD19531Q5AT CSD19533Q5A
Manufacturer Texas Instruments Texas Instruments Texas Instruments Texas Instruments Texas Instruments
Product Status Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 60 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 100A (Ta) 50A (Ta) 17A (Ta), 100A (Tc) 100A (Ta) 100A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V 4.5V, 10V 6V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 9.4mOhm @ 13A, 10V 15.1mOhm @ 10A, 10V 5.9mOhm @ 18A, 10V 6.4mOhm @ 16A, 10V 9.4mOhm @ 13A, 10V
Vgs(th) (Max) @ Id 3.4V @ 250µA 3.4V @ 250µA 2.3V @ 250µA 3.3V @ 250µA 3.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 10 V 22 nC @ 10 V 36 nC @ 10 V 48 nC @ 10 V 35 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2670 pF @ 50 V 1680 pF @ 50 V 2750 pF @ 30 V 3870 pF @ 50 V 2670 pF @ 50 V
FET Feature - - - - -
Power Dissipation (Max) 3.2W (Ta), 96W (Tc) 3.2W (Ta), 63W (Tc) 3.2W (Ta), 116W (Tc) 3.3W (Ta), 125W (Tc) 3.2W (Ta), 96W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-VSONP (5x6) 8-VSONP (5x6) 8-VSONP (5x6) 8-VSONP (5x6) 8-VSONP (5x6)
Package / Case 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN

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