CSD19533Q5AT
  • Share:

Texas Instruments CSD19533Q5AT

Manufacturer No:
CSD19533Q5AT
Manufacturer:
Texas Instruments
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 100A 8VSON
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The CSD19533Q5AT is a high-performance N-channel NexFET™ power MOSFET manufactured by Texas Instruments. Designed for power conversion applications, this MOSFET features a compact 5mm x 6mm SON package and is optimized to minimize power losses. With a drain-source voltage (VDS) rating of 100V and a low on-resistance (RDS(on)) of 7.8mΩ, it is ideal for high-efficiency power management in industrial, automotive, and consumer electronics. Its advanced design ensures superior thermal performance and reliability, making it a competitive choice for demanding applications.

Key Specifications

ParameterValueUnitNotes
Drain-Source Voltage (VDS)100V
Continuous Drain Current (ID)100APackage limited
On-Resistance (RDS(on))7.8at VGS = 10V
Gate-Source Voltage (VGS)±20V
Total Gate Charge (QG)27nCTypical
Gate Threshold Voltage (VGS(th))2.8VTypical
PackageSON 5x6
Thermal Resistance (RθJA)40°C/WTypical

Key Features

  • Ultra-low gate charge (QG) and gate-drain charge (QGD) for fast switching.
  • Low thermal resistance ensures efficient heat dissipation.
  • Avalanche rated for robust performance in high-stress conditions.
  • Lead-free and RoHS compliant, meeting environmental standards.
  • Halogen-free design for enhanced safety and sustainability.

Applications

The CSD19533Q5AT is widely used in power conversion and management systems. Its applications include:

  • Industrial Automation: Motor control and power supply units.
  • Telecommunications: Primary and secondary side power management.
  • Automotive Electronics: Battery management systems and DC-DC converters.
  • Consumer Electronics: High-efficiency power adapters and inverters.

Q & A

1. What is the maximum drain-source voltage of the CSD19533Q5AT?

The maximum drain-source voltage is 100V.

2. What is the typical on-resistance of this MOSFET?

The typical on-resistance is 7.8mΩ at VGS = 10V.

3. Is the CSD19533Q5AT RoHS compliant?

Yes, it is lead-free and RoHS compliant.

4. What is the gate threshold voltage?

The typical gate threshold voltage is 2.8V.

5. What package does this MOSFET use?

It uses a 5mm x 6mm SON package.

6. What is the maximum continuous drain current?

The maximum continuous drain current is 100A, limited by the package.

7. What are the typical applications of this MOSFET?

Typical applications include motor control, power supplies, and DC-DC converters.

8. What is the total gate charge?

The total gate charge is typically 27nC.

9. Is this MOSFET suitable for automotive applications?

Yes, it is suitable for automotive electronics such as battery management systems.

10. What is the thermal resistance of this MOSFET?

The typical thermal resistance (RθJA) is 40°C/W.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:100A (Ta)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:9.4mOhm @ 13A, 10V
Vgs(th) (Max) @ Id:3.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:35 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2670 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):3.2W (Ta), 96W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-VSONP (5x6)
Package / Case:8-PowerTDFN
0 Remaining View Similar

In Stock

$1.73
505

Please send RFQ , we will respond immediately.

Same Series
DD62M3200T0/AA
DD62M3200T0/AA
CONN D-SUB HD PLUG 62P VERT SLDR
DD44M32S0V3S/AA
DD44M32S0V3S/AA
CONN D-SUB HD PLUG 44P VERT SLDR
DD15S10LVLS/AA
DD15S10LVLS/AA
CONN D-SUB HD RCPT 15POS CRIMP
DD62M3200V50/AA
DD62M3200V50/AA
CONN D-SUB HD PLUG 62P VERT SLDR
DD15S10LVLS
DD15S10LVLS
CONN D-SUB HD RCPT 15POS CRIMP
DD15S20LT2S
DD15S20LT2S
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20JT2S/AA
DD15S20JT2S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20WES
DD15S20WES
CONN D-SUB HD RCPT 15P SLDR CUP
CBC46W4S100E20/AA
CBC46W4S100E20/AA
CONN D-SUB RCPT 46POS CRIMP
CBC9W4S10HE2S/AA
CBC9W4S10HE2S/AA
CONN D-SUB RCPT 9POS CRIMP
CBC13W3S10HE3S/AA
CBC13W3S10HE3S/AA
CONN D-SUB RCPT 13POS CRIMP
DD62M32S0V3S/AA
DD62M32S0V3S/AA
CONN D-SUB HD PLUG 62P VERT SLDR

Similar Products

Part Number CSD19533Q5AT CSD19534Q5AT CSD18533Q5AT CSD19531Q5AT CSD19533Q5A
Manufacturer Texas Instruments Texas Instruments Texas Instruments Texas Instruments Texas Instruments
Product Status Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 60 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 100A (Ta) 50A (Ta) 17A (Ta), 100A (Tc) 100A (Ta) 100A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V 4.5V, 10V 6V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 9.4mOhm @ 13A, 10V 15.1mOhm @ 10A, 10V 5.9mOhm @ 18A, 10V 6.4mOhm @ 16A, 10V 9.4mOhm @ 13A, 10V
Vgs(th) (Max) @ Id 3.4V @ 250µA 3.4V @ 250µA 2.3V @ 250µA 3.3V @ 250µA 3.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 10 V 22 nC @ 10 V 36 nC @ 10 V 48 nC @ 10 V 35 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2670 pF @ 50 V 1680 pF @ 50 V 2750 pF @ 30 V 3870 pF @ 50 V 2670 pF @ 50 V
FET Feature - - - - -
Power Dissipation (Max) 3.2W (Ta), 96W (Tc) 3.2W (Ta), 63W (Tc) 3.2W (Ta), 116W (Tc) 3.3W (Ta), 125W (Tc) 3.2W (Ta), 96W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-VSONP (5x6) 8-VSONP (5x6) 8-VSONP (5x6) 8-VSONP (5x6) 8-VSONP (5x6)
Package / Case 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN

Related Product By Categories

FQD4P25TM-WS
FQD4P25TM-WS
onsemi
MOSFET P-CH 250V 3.1A DPAK
IXFH60N65X2-4
IXFH60N65X2-4
IXYS
MOSFET N-CH 650V 60A TO247-4L
STP5NK60Z
STP5NK60Z
STMicroelectronics
MOSFET N-CH 600V 5A TO220AB
NTHD3101FT1G
NTHD3101FT1G
onsemi
MOSFET P-CH 20V 3.2A CHIPFET
NVR5198NLT1G
NVR5198NLT1G
onsemi
MOSFET N-CH 60V 1.7A SOT23-3
FCD380N60E
FCD380N60E
onsemi
MOSFET N-CH 600V 10.2A DPAK
NTS4173PT1G
NTS4173PT1G
onsemi
MOSFET P-CH 30V 1.2A SC70-3
IRF740PBF-BE3
IRF740PBF-BE3
Vishay Siliconix
MOSFET N-CH 400V 10A TO220AB
STF13N65M2
STF13N65M2
STMicroelectronics
MOSFET N-CH 650V 10A TO220FP
STD85N3LH5
STD85N3LH5
STMicroelectronics
MOSFET N-CH 30V 80A DPAK
PH1930AL,115
PH1930AL,115
Nexperia USA Inc.
MOSFET N-CH 30V 100A LFPAK56
NX3008NBKT,115
NX3008NBKT,115
NXP USA Inc.
MOSFET N-CH 30V 350MA SC75

Related Product By Brand

AFE5401TRGCRQ1
AFE5401TRGCRQ1
Texas Instruments
IC AFE 4 CHAN 12BIT 64VQFN
DAC70004IPW
DAC70004IPW
Texas Instruments
IC DAC 14BIT V-OUT 14TSSOP
AM5718AABCXQ1
AM5718AABCXQ1
Texas Instruments
AM5718AABCXQ1
AM26LS32ACNSR
AM26LS32ACNSR
Texas Instruments
IC RECEIVER 0/4 16SO
TRS208IDWR
TRS208IDWR
Texas Instruments
IC TRANSCEIVER FULL 4/4 24SOIC
TUSB1105RTZRG4
TUSB1105RTZRG4
Texas Instruments
IC TRANSCEIVER HALF 1/1 16QFN
SN65LVPE501RGER
SN65LVPE501RGER
Texas Instruments
IC REDRIVER PCIE 2CH 24VQFN
TLV2711IDBVR
TLV2711IDBVR
Texas Instruments
IC OPAMP GP 1 CIRCUIT SOT23-5
TPS54240DGQR
TPS54240DGQR
Texas Instruments
IC REG BCK SPLIT RAIL ADJ 10MSOP
LM340T-15/NOPB
LM340T-15/NOPB
Texas Instruments
IC REG LINEAR 15V 1.5A TO220-3
TPS7A0333PDBVR
TPS7A0333PDBVR
Texas Instruments
IC REG LINEAR 3.3V 200MA SOT23-5
LP2985AITL-3.3/NOPB
LP2985AITL-3.3/NOPB
Texas Instruments
IC REG LINEAR 3.3V 150MA 5DSBGA