STP11NK40Z
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STMicroelectronics STP11NK40Z

Manufacturer No:
STP11NK40Z
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 400V 9A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STP11NK40Z is a high-voltage N-channel Power MOSFET developed by STMicroelectronics using the advanced SuperMESH™ technology. This device is part of the SuperMESH™ series, which is an optimization of the well-established PowerMESH™ layout. It is designed to offer low on-resistance, high dv/dt capability, and excellent performance in demanding applications. The STP11NK40Z is available in TO-220 and TO-220FP packages, making it versatile for various high-power switching applications.

Key Specifications

ParameterValueUnit
VDS (Drain-Source Voltage)400V
RDS(on) (On-Resistance)< 0.55Ω
ID (Drain Current)9A
Pw (Power Dissipation)110W
Ciss (Input Capacitance)930pF
Coss (Output Capacitance)140pF
Crss (Reverse Transfer Capacitance)30pF
Qg (Total Gate Charge)32nC
td(on) (Turn-on Delay Time)20ns
tr (Rise Time)20ns
td(off) (Turn-off Delay Time)40ns
tf (Fall Time)18ns

Key Features

  • 100% avalanche tested to ensure reliability in high-stress applications.
  • Gate charge minimized for efficient switching.
  • Very low intrinsic capacitance, reducing switching losses.
  • Zener-protected gate-source to enhance ESD performance.
  • High dv/dt capability for demanding applications.
  • Available in TO-220 and TO-220FP packages for flexibility in design.
  • ECOPACK® compliant packages for environmental sustainability.

Applications

  • High current, high speed switching applications.
  • Off-line power supplies and power factor correction (PFC) circuits.
  • Adapters and DC-DC converters.
  • Lighting systems, including LED drivers.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STP11NK40Z?
    The maximum drain-source voltage (VDS) is 400 V.
  2. What is the typical on-resistance (RDS(on)) of the STP11NK40Z?
    The typical on-resistance (RDS(on)) is less than 0.55 Ω.
  3. What is the maximum drain current (ID) of the STP11NK40Z?
    The maximum drain current (ID) is 9 A.
  4. What are the available packages for the STP11NK40Z?
    The STP11NK40Z is available in TO-220 and TO-220FP packages.
  5. What is the significance of the SuperMESH™ technology in the STP11NK40Z?
    The SuperMESH™ technology optimizes the PowerMESH™ layout to reduce on-resistance and enhance dv/dt capability.
  6. What are the key features of the STP11NK40Z?
    Key features include 100% avalanche testing, minimized gate charge, low intrinsic capacitance, and Zener-protected gates.
  7. What are some common applications of the STP11NK40Z?
    Common applications include high current switching, off-line power supplies, PFC circuits, adapters, and lighting systems.
  8. Is the STP11NK40Z environmentally compliant?
    Yes, the STP11NK40Z is available in ECOPACK® compliant packages.
  9. What is the thermal resistance junction-case (Rthj-case) for the TO-220 package?
    The thermal resistance junction-case (Rthj-case) for the TO-220 package is 4.17 °C/W.
  10. What is the total gate charge (Qg) of the STP11NK40Z?
    The total gate charge (Qg) is 32 nC.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):400 V
Current - Continuous Drain (Id) @ 25°C:9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:550mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id:4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:32 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:930 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):110W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
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Same Series
STP11NK40ZFP
STP11NK40ZFP
MOSFET N-CH 400V 9A TO220FP
STB11NK40ZT4
STB11NK40ZT4
MOSFET N-CH 400V 9A D2PAK

Similar Products

Part Number STP11NK40Z STP11NK50Z STP17NK40Z
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 400 V 500 V 400 V
Current - Continuous Drain (Id) @ 25°C 9A (Tc) 10A (Tc) 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 550mOhm @ 4.5A, 10V 520mOhm @ 4.5A, 10V 250mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 100µA 4.5V @ 100µA 4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 32 nC @ 10 V 68 nC @ 10 V 65 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 930 pF @ 25 V 1390 pF @ 25 V 1900 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 110W (Tc) 125W (Tc) 150W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-220 TO-220 TO-220
Package / Case TO-220-3 TO-220-3 TO-220-3

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