Overview
The STP11NK40Z is a high-voltage N-channel Power MOSFET developed by STMicroelectronics using the advanced SuperMESH™ technology. This device is part of the SuperMESH™ series, which is an optimization of the well-established PowerMESH™ layout. It is designed to offer low on-resistance, high dv/dt capability, and excellent performance in demanding applications. The STP11NK40Z is available in TO-220 and TO-220FP packages, making it versatile for various high-power switching applications.
Key Specifications
Parameter | Value | Unit |
---|---|---|
VDS (Drain-Source Voltage) | 400 | V |
RDS(on) (On-Resistance) | < 0.55 | Ω |
ID (Drain Current) | 9 | A |
Pw (Power Dissipation) | 110 | W |
Ciss (Input Capacitance) | 930 | pF |
Coss (Output Capacitance) | 140 | pF |
Crss (Reverse Transfer Capacitance) | 30 | pF |
Qg (Total Gate Charge) | 32 | nC |
td(on) (Turn-on Delay Time) | 20 | ns |
tr (Rise Time) | 20 | ns |
td(off) (Turn-off Delay Time) | 40 | ns |
tf (Fall Time) | 18 | ns |
Key Features
- 100% avalanche tested to ensure reliability in high-stress applications.
- Gate charge minimized for efficient switching.
- Very low intrinsic capacitance, reducing switching losses.
- Zener-protected gate-source to enhance ESD performance.
- High dv/dt capability for demanding applications.
- Available in TO-220 and TO-220FP packages for flexibility in design.
- ECOPACK® compliant packages for environmental sustainability.
Applications
- High current, high speed switching applications.
- Off-line power supplies and power factor correction (PFC) circuits.
- Adapters and DC-DC converters.
- Lighting systems, including LED drivers.
Q & A
- What is the maximum drain-source voltage (VDS) of the STP11NK40Z?
The maximum drain-source voltage (VDS) is 400 V. - What is the typical on-resistance (RDS(on)) of the STP11NK40Z?
The typical on-resistance (RDS(on)) is less than 0.55 Ω. - What is the maximum drain current (ID) of the STP11NK40Z?
The maximum drain current (ID) is 9 A. - What are the available packages for the STP11NK40Z?
The STP11NK40Z is available in TO-220 and TO-220FP packages. - What is the significance of the SuperMESH™ technology in the STP11NK40Z?
The SuperMESH™ technology optimizes the PowerMESH™ layout to reduce on-resistance and enhance dv/dt capability. - What are the key features of the STP11NK40Z?
Key features include 100% avalanche testing, minimized gate charge, low intrinsic capacitance, and Zener-protected gates. - What are some common applications of the STP11NK40Z?
Common applications include high current switching, off-line power supplies, PFC circuits, adapters, and lighting systems. - Is the STP11NK40Z environmentally compliant?
Yes, the STP11NK40Z is available in ECOPACK® compliant packages. - What is the thermal resistance junction-case (Rthj-case) for the TO-220 package?
The thermal resistance junction-case (Rthj-case) for the TO-220 package is 4.17 °C/W. - What is the total gate charge (Qg) of the STP11NK40Z?
The total gate charge (Qg) is 32 nC.