STP11NK40ZFP
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STMicroelectronics STP11NK40ZFP

Manufacturer No:
STP11NK40ZFP
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 400V 9A TO220FP
Delivery:
Payment:
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Product Introduction

Overview

The STP11NK40ZFP is a high-voltage N-channel Power MOSFET developed by STMicroelectronics using the advanced SuperMESH™ technology. This device is part of the SuperMESH™ series, which is an optimization of the well-established PowerMESH™ layout. It is designed to offer low on-resistance and high dv/dt capability, making it suitable for demanding applications. The STP11NK40ZFP is available in the TO-220FP package and is 100% avalanche tested, ensuring robust performance and reliability.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (VDS) 400 V
On-Resistance (RDS(on)) < 0.55 Ω
Drain Current (ID) 9 A
Package TO-220FP
Thermal Resistance Junction-Case (Rthj-case) 4.17 °C/W
Thermal Resistance Junction-Ambient (Rthj-amb) 62.5 °C/W
Avalanche Current (IAR) 9 A
Single Pulse Avalanche Energy (EAS) 190 mJ
Total Gate Charge (Qg) 32 nC

Key Features

  • 100% avalanche tested for robustness and reliability.
  • Gate charge minimized for efficient switching.
  • Very low intrinsic capacitance to reduce switching losses.
  • Zener-protected gate-source to enhance ESD performance and protect against voltage transients.
  • High dv/dt capability for demanding applications.
  • Available in ECOPACK® packages to meet environmental compliance.

Applications

  • High current, high speed switching applications.
  • Off-line power supplies and power factor correction (PFC) circuits.
  • Adapters and lighting systems.

Q & A

  1. What is the maximum drain-source voltage of the STP11NK40ZFP?

    The maximum drain-source voltage (VDS) is 400 V.

  2. What is the typical on-resistance of the STP11NK40ZFP?

    The typical on-resistance (RDS(on)) is less than 0.55 Ω.

  3. What is the maximum drain current of the STP11NK40ZFP?

    The maximum drain current (ID) is 9 A.

  4. In what package is the STP11NK40ZFP available?

    The STP11NK40ZFP is available in the TO-220FP package.

  5. What is the thermal resistance junction-case of the STP11NK40ZFP?

    The thermal resistance junction-case (Rthj-case) is 4.17 °C/W.

  6. Does the STP11NK40ZFP have built-in Zener protection?
  7. What are the typical applications of the STP11NK40ZFP?

    The STP11NK40ZFP is typically used in high current, high speed switching applications, off-line power supplies, PFC circuits, adapters, and lighting systems.

  8. Is the STP11NK40ZFP 100% avalanche tested?
  9. What is the single pulse avalanche energy of the STP11NK40ZFP?

    The single pulse avalanche energy (EAS) is 190 mJ.

  10. What is the total gate charge of the STP11NK40ZFP?

    The total gate charge (Qg) is 32 nC.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):400 V
Current - Continuous Drain (Id) @ 25°C:9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:550mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id:4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:32 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:930 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):30W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
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In Stock

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Same Series
STP11NK40ZFP
STP11NK40ZFP
MOSFET N-CH 400V 9A TO220FP
STB11NK40ZT4
STB11NK40ZT4
MOSFET N-CH 400V 9A D2PAK

Similar Products

Part Number STP11NK40ZFP STP11NK50ZFP STP17NK40ZFP
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Not For New Designs Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 400 V 500 V 400 V
Current - Continuous Drain (Id) @ 25°C 9A (Tc) 10A (Tc) 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 550mOhm @ 4.5A, 10V 520mOhm @ 4.5A, 10V 250mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 100µA 4.5V @ 100µA 4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 32 nC @ 10 V 68 nC @ 10 V 65 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 930 pF @ 25 V 1390 pF @ 25 V 1900 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 30W (Tc) 30W (Tc) 35W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-220FP TO-220FP TO-220FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

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