STP11NK50ZFP
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STMicroelectronics STP11NK50ZFP

Manufacturer No:
STP11NK50ZFP
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 500V 10A TO220FP
Delivery:
Payment:
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Product Introduction

Overview

The STP11NK50ZFP is a high-performance N-channel Power MOSFET from STMicroelectronics, part of the SuperMESH™ series. This device is optimized using ST's strip-based PowerMESH™ layout, which significantly reduces on-resistance and enhances dv/dt capability. The STP11NK50ZFP is available in the TO-220FP package and is designed for demanding switching applications.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (VDS) 500 V
Gate-Source Voltage (VGS) ±30 V
Drain Current (ID) Continuous at TC = 25°C 10 A
Drain Current (ID) Continuous at TC = 100°C 6.3 A
Pulse Drain Current (IDM) 40 A
Total Dissipation at TC = 25°C 30 W
Static Drain-Source On Resistance (RDS(on)) < 0.52 Ω
Gate Threshold Voltage (VGS(th)) 3 to 4.5 V
Operating Junction Temperature (TJ) -55 to 150 °C

Key Features

  • Extremely high dv/dt capability, making it suitable for demanding applications.
  • 100% avalanche tested, ensuring robustness against transient conditions.
  • Minimized gate charge, which reduces switching losses and improves efficiency.
  • Very low intrinsic capacitances, enhancing high-frequency performance.
  • Zener-protected, providing additional protection against voltage spikes.

Applications

The STP11NK50ZFP is primarily used in switching applications, including but not limited to:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • High-frequency switching circuits.
  • Aerospace and automotive systems requiring high reliability and performance.

Q & A

  1. What is the maximum drain-source voltage of the STP11NK50ZFP?

    500 V.

  2. What is the maximum continuous drain current at 25°C?

    10 A.

  3. What is the typical on-resistance of the STP11NK50ZFP?

    < 0.52 Ω.

  4. What is the gate threshold voltage range?

    3 to 4.5 V.

  5. What is the maximum operating junction temperature?

    -55 to 150 °C.

  6. What are the key features of the SuperMESH™ series?

    High dv/dt capability, 100% avalanche tested, minimized gate charge, and very low intrinsic capacitances.

  7. In which package is the STP11NK50ZFP available?

    TO-220FP.

  8. What are some common applications for this MOSFET?

    Switching applications, power supplies, motor control, high-frequency switching circuits, and aerospace/automotive systems.

  9. Is the STP11NK50ZFP Zener-protected?
  10. What is the total dissipation at 25°C for the TO-220FP package?

    30 W.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:10A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:520mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id:4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:68 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1390 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):30W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
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Same Series
STB11NK50ZT4
STB11NK50ZT4
MOSFET N-CH 500V 10A D2PAK
STP11NK50ZFP
STP11NK50ZFP
MOSFET N-CH 500V 10A TO220FP

Similar Products

Part Number STP11NK50ZFP STP15NK50ZFP STP14NK50ZFP STP11NK40ZFP
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Not For New Designs Obsolete Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 500 V 500 V 400 V
Current - Continuous Drain (Id) @ 25°C 10A (Tc) 14A (Tc) 14A (Tc) 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 520mOhm @ 4.5A, 10V 340mOhm @ 7A, 10V 380mOhm @ 6A, 10V 550mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 100µA 4.5V @ 100µA 4.5V @ 100µA 4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 68 nC @ 10 V 106 nC @ 10 V 92 nC @ 10 V 32 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1390 pF @ 25 V 2260 pF @ 25 V 2000 pF @ 25 V 930 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 30W (Tc) 40W (Tc) 35W (Tc) 30W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -50°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220FP TO-220FP TO-220FP TO-220FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

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