BUK7Y4R4-40EX
  • Share:

Nexperia USA Inc. BUK7Y4R4-40EX

Manufacturer No:
BUK7Y4R4-40EX
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 40V 100A LFPAK56
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BUK7Y4R4-40EX is a high-performance N-channel MOSFET designed and manufactured by Nexperia USA Inc. This device is specifically tailored for demanding automotive applications, adhering to the AEC Q101 standard. It features a robust design suitable for thermally challenging environments, with an operating temperature rating of up to +175°C. The MOSFET is housed in the LFPAK56 package, which is known for its excellent thermal performance and compact size.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)40 V
ID (Continuous Drain Current)100 A
RDS(on) (On-State Drain-Source Resistance)4.4 mΩ
Ptot (Total Power Dissipation at Tc = 25°C)147 W
Tj (Junction Temperature)-55 to +175°C
PackageLFPAK56 (Power-SO8)

Key Features

  • High current capability of 100 A, making it suitable for high-power applications.
  • Low on-state resistance (RDS(on)) of 4.4 mΩ, reducing power losses and improving efficiency.
  • AEC Q101 qualified, ensuring reliability and performance in automotive environments.
  • High junction temperature rating of +175°C, suitable for thermally demanding applications.
  • LFPAK56 package provides excellent thermal performance and a compact footprint.

Applications

The BUK7Y4R4-40EX is designed for high-performance automotive applications, including but not limited to:

  • Electric power steering (EPS) systems.
  • Electric braking systems.
  • Heating and cooling systems.
  • Other high-power automotive electronics.

Q & A

  1. What is the maximum drain-source voltage of the BUK7Y4R4-40EX?
    The maximum drain-source voltage (VDS) is 40 V.
  2. What is the continuous drain current rating of this MOSFET?
    The continuous drain current (ID) is 100 A.
  3. What is the on-state drain-source resistance of the BUK7Y4R4-40EX?
    The on-state drain-source resistance (RDS(on)) is 4.4 mΩ.
  4. What is the total power dissipation at Tc = 25°C for this MOSFET?
    The total power dissipation (Ptot) at Tc = 25°C is 147 W.
  5. What is the junction temperature range for the BUK7Y4R4-40EX?
    The junction temperature (Tj) range is -55 to +175°C.
  6. What package type is used for the BUK7Y4R4-40EX?
    The package type is LFPAK56 (Power-SO8).
  7. Is the BUK7Y4R4-40EX AEC Q101 qualified?
    Yes, it is AEC Q101 qualified for use in high-performance automotive applications.
  8. What are some typical applications for the BUK7Y4R4-40EX?
    Typical applications include electric power steering (EPS) systems, electric braking systems, heating and cooling systems, and other high-power automotive electronics.
  9. Why is the LFPAK56 package beneficial for this MOSFET?
    The LFPAK56 package provides excellent thermal performance and a compact footprint, making it ideal for high-power applications in limited space.
  10. Where can I find detailed specifications and datasheets for the BUK7Y4R4-40EX?
    Detailed specifications and datasheets can be found on the official Nexperia website or through distributors like Digi-Key and Mouser Electronics.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:4.4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:39 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2781 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):147W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:LFPAK56, Power-SO8
Package / Case:SC-100, SOT-669
0 Remaining View Similar

In Stock

$1.24
341

Please send RFQ , we will respond immediately.

Related Product By Categories

2N7002W
2N7002W
Diotec Semiconductor
MOSFET, SOT-323, 60V, 0.115A, N,
2N7002 TR PBFREE
2N7002 TR PBFREE
Central Semiconductor Corp
MOSFET N-CH 60V 115MA SOT23
NTMFS5C460NLT1G
NTMFS5C460NLT1G
onsemi
MOSFET N-CH 40V 5DFN
STD2NK100Z
STD2NK100Z
STMicroelectronics
MOSFET N-CH 1000V 1.85A DPAK
BUK7Y2R0-40HX
BUK7Y2R0-40HX
Nexperia USA Inc.
MOSFET N-CH 40V 120A LFPAK56
FCPF1300N80Z
FCPF1300N80Z
onsemi
MOSFET N-CH 800V 4A TO220F
NTMFS4C028NT1G
NTMFS4C028NT1G
onsemi
MOSFET N-CH 30V 16.4A/52A 5DFN
NTMFS002P03P8ZT1G
NTMFS002P03P8ZT1G
onsemi
MOSFET, POWER -30V P-CHANNEL, SO
STW48N60M6-4
STW48N60M6-4
STMicroelectronics
MOSFET N-CH 600V 39A TO247-4
STS12NH3LL
STS12NH3LL
STMicroelectronics
MOSFET N-CH 30V 12A 8SO
STD7N52DK3
STD7N52DK3
STMicroelectronics
MOSFET N-CH 525V 6A DPAK
2SJ652-1E
2SJ652-1E
onsemi
MOSFET P-CH 60V 28A TO220F-3SG

Related Product By Brand

BAT54QB-QZ
BAT54QB-QZ
Nexperia USA Inc.
BAT54QB-Q/SOT8015/DFN1110D-3
PMEG4005EJF
PMEG4005EJF
Nexperia USA Inc.
PMEG4005EJ/SOD323/SOD2
BCP56-10,115
BCP56-10,115
Nexperia USA Inc.
TRANS NPN 80V 1A SOT223
BC846A-QVL
BC846A-QVL
Nexperia USA Inc.
TRANS NPN 65V 0.1A TO236AB
PDTC144EU,115
PDTC144EU,115
Nexperia USA Inc.
TRANS PREBIAS NPN 50V SOT323
74HC541D-Q100J
74HC541D-Q100J
Nexperia USA Inc.
IC BUFFER NON-INVERT 6V 20SO
74LVC1G126GW-Q100H
74LVC1G126GW-Q100H
Nexperia USA Inc.
IC BUF NON-INVERT 5.5V 5TSSOP
74HCT125DB,118
74HCT125DB,118
Nexperia USA Inc.
IC BUF NON-INVERT 5.5V 14SSOP
74HCT14D-Q100,118
74HCT14D-Q100,118
Nexperia USA Inc.
IC INVERT SCHMITT 6CH 1-INP 14SO
HEF4047BT,652
HEF4047BT,652
Nexperia USA Inc.
IC MULTIVIBRATOR 50NS 14SO
74HC137D,652
74HC137D,652
Nexperia USA Inc.
IC DECODER/DEMUX 1 X 3:8 16SO
BC807K-25,235
BC807K-25,235
Nexperia USA Inc.
BC807K-25 - 45 V, 500 MA PNP GEN