Overview
The STB80NF55-06T4 is a high-performance N-channel Power MOSFET developed by STMicroelectronics. This device is part of the STripFET™ II series, which utilizes STMicroelectronics' unique 'Single Feature Size™' strip-based process. This technology enhances the transistor's packing density, resulting in low on-resistance, rugged avalanche characteristics, and improved manufacturing reproducibility.
The STB80NF55-06T4 is designed for high-power switching applications, offering exceptional dv/dt capability and 100% avalanche testing. It is available in the D²PAK package and is suitable for a wide range of applications requiring high current handling and low on-resistance.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-source voltage (VDS) | 55 | V |
| Gate-source voltage (VGS) | ±20 | V |
| Drain current (continuous) at TC = 25°C | 80 | A |
| Drain current (continuous) at TC = 100°C | 42 | A |
| Drain current (pulsed) | 320 | A |
| Total dissipation at TC = 25°C | 300 | W |
| Thermal resistance junction-case (RthJC) | 0.5 | °C/W |
| Thermal resistance junction-ambient (RthJA) | 62.5 | °C/W |
| Static drain-source on resistance (RDS(on)) | < 0.0065 | Ω |
| Gate threshold voltage (VGS(th)) | 2 - 4 | V |
| Maximum lead temperature for soldering purpose | 300 | °C |
Key Features
- Exceptional dv/dt capability, making it suitable for high-frequency switching applications.
- 100% avalanche tested, ensuring robustness and reliability under high-stress conditions.
- Low on-resistance (RDS(on) < 0.0065 Ω), reducing power losses and improving efficiency.
- High packing density due to the 'Single Feature Size™' strip-based process, enhancing performance and reliability.
- Rugged avalanche characteristics, providing protection against voltage spikes and surges.
- Available in D²PAK package, offering a compact and thermally efficient design.
Applications
- High-power switching applications, such as power supplies, motor drives, and DC-DC converters.
- Industrial control systems requiring high current handling and low on-resistance.
- Automotive systems, including electric vehicles and hybrid vehicles, where high reliability and efficiency are crucial.
- Renewable energy systems, such as solar and wind power inverters, that demand robust and efficient power management.
Q & A
- What is the maximum drain-source voltage (VDS) of the STB80NF55-06T4?
The maximum drain-source voltage (VDS) is 55 V.
- What is the continuous drain current (ID) at 25°C for the STB80NF55-06T4?
The continuous drain current (ID) at 25°C is 80 A.
- What is the thermal resistance junction-case (RthJC) of the STB80NF55-06T4?
The thermal resistance junction-case (RthJC) is 0.5 °C/W.
- What is the static drain-source on resistance (RDS(on)) of the STB80NF55-06T4?
The static drain-source on resistance (RDS(on)) is less than 0.0065 Ω.
- What is the gate threshold voltage (VGS(th)) range for the STB80NF55-06T4?
The gate threshold voltage (VGS(th)) range is 2 to 4 V.
- What are the typical applications of the STB80NF55-06T4?
The STB80NF55-06T4 is typically used in high-power switching applications, industrial control systems, automotive systems, and renewable energy systems.
- What package type is the STB80NF55-06T4 available in?
The STB80NF55-06T4 is available in the D²PAK package.
- What is the maximum lead temperature for soldering the STB80NF55-06T4?
The maximum lead temperature for soldering is 300 °C.
- Is the STB80NF55-06T4 100% avalanche tested?
Yes, the STB80NF55-06T4 is 100% avalanche tested.
- What is the peak diode recovery voltage slope (dv/dt) for the STB80NF55-06T4?
The peak diode recovery voltage slope (dv/dt) is 7 V/ns.
