STQ1HNK60R-AP
  • Share:

STMicroelectronics STQ1HNK60R-AP

Manufacturer No:
STQ1HNK60R-AP
Manufacturer:
STMicroelectronics
Package:
Cut Tape (CT)
Description:
MOSFET N-CH 600V 400MA TO92-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STQ1HNK60R-AP is a high-voltage N-channel Power MOSFET developed by STMicroelectronics. This device utilizes ST's advanced SuperMESH™ technology and STripFET F8 technology, featuring an enhanced trench gate structure. It is designed to provide high performance and reliability in various power management applications. The MOSFET is Zener-protected and 100% avalanche tested, ensuring robust operation under demanding conditions.

Key Specifications

ParameterValue
Drain-Source Voltage (Vds)600 V
Drain Current (Id)0.25 A (continuous), 1.6 A (pulsed)
Power Dissipation (Pd)3 W
On-Resistance (Rds(on))7.3 Ω @ 10 V, 0.5 A
Minimum Operating Temperature-55 °C
Maximum Operating Temperature+150 °C
Channel ModeEnhancement
PackagingTO-92-3

Key Features

  • Zener-protected for enhanced reliability
  • 100% avalanche tested to ensure robust performance
  • Utilizes ST's SuperMESH™ and STripFET F8 technologies for improved efficiency
  • High voltage capability with a drain-source voltage of 600 V
  • Low on-resistance of 7.3 Ω @ 10 V, 0.5 A
  • Wide operating temperature range from -55 °C to +150 °C

Applications

The STQ1HNK60R-AP is ideal for various power management applications, including:

  • Flyback converters
  • LED lighting systems
  • High-voltage power supplies
  • Industrial and consumer electronics requiring high reliability and efficiency

Q & A

  1. What is the drain-source voltage of the STQ1HNK60R-AP?
    The drain-source voltage (Vds) is 600 V.
  2. What is the continuous drain current of the STQ1HNK60R-AP?
    The continuous drain current (Id) is 0.25 A.
  3. What is the pulsed drain current of the STQ1HNK60R-AP?
    The pulsed drain current is 1.6 A.
  4. What technology does the STQ1HNK60R-AP use?
    The device utilizes ST's SuperMESH™ and STripFET F8 technologies.
  5. Is the STQ1HNK60R-AP Zener-protected?
    Yes, the STQ1HNK60R-AP is Zener-protected.
  6. What is the on-resistance of the STQ1HNK60R-AP?
    The on-resistance (Rds(on)) is 7.3 Ω @ 10 V, 0.5 A.
  7. What is the maximum operating temperature of the STQ1HNK60R-AP?
    The maximum operating temperature is +150 °C.
  8. What are some typical applications of the STQ1HNK60R-AP?
    Typical applications include flyback converters, LED lighting systems, and high-voltage power supplies.
  9. What is the packaging type of the STQ1HNK60R-AP?
    The packaging type is TO-92-3.
  10. Is the STQ1HNK60R-AP 100% avalanche tested?
    Yes, the STQ1HNK60R-AP is 100% avalanche tested.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:400mA (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:8.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:3.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:10 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:156 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-92-3
Package / Case:TO-226-3, TO-92-3 (TO-226AA)
0 Remaining View Similar

In Stock

$0.70
1,173

Please send RFQ , we will respond immediately.

Same Series
STD1NK60T4
STD1NK60T4
MOSFET N-CH 600V 1A DPAK
STQ1HNK60R-AP
STQ1HNK60R-AP
MOSFET N-CH 600V 400MA TO92-3
STD1NK60-1
STD1NK60-1
MOSFET N-CH 600V 1A IPAK

Related Product By Categories

STD26P3LLH6
STD26P3LLH6
STMicroelectronics
MOSFET P-CH 30V 12A DPAK
NTHD3101FT1G
NTHD3101FT1G
onsemi
MOSFET P-CH 20V 3.2A CHIPFET
BSS138PW,115
BSS138PW,115
Nexperia USA Inc.
MOSFET N-CH 60V 320MA SOT323
STWA88N65M5
STWA88N65M5
STMicroelectronics
MOSFET N-CH 650V 84A TO247
FQD19N10LTM
FQD19N10LTM
onsemi
MOSFET N-CH 100V 15.6A DPAK
STP3NK90Z
STP3NK90Z
STMicroelectronics
MOSFET N-CH 900V 3A TO220AB
BUK9M85-60EX
BUK9M85-60EX
Nexperia USA Inc.
MOSFET N-CH 60V 12.8A LFPAK33
STH315N10F7-6
STH315N10F7-6
STMicroelectronics
MOSFET N-CH 100V 180A H2PAK-6
STV270N4F3
STV270N4F3
STMicroelectronics
MOSFET N-CH 40V 270A 10POWERSO
STF9N60M2
STF9N60M2
STMicroelectronics
MOSFET N-CH 600V 5.5A TO220FP
NVD5490NLT4G
NVD5490NLT4G
onsemi
MOSFET N-CH 60V 5A/17A DPAK-3
FDC658APG
FDC658APG
onsemi
MOSFET P-CH 30V 4A SSOT6

Related Product By Brand

STTH30AC06FP
STTH30AC06FP
STMicroelectronics
DIODE GEN PURP 600V 30A TO220
T405Q-600H
T405Q-600H
STMicroelectronics
TRIAC SENS GATE 600V 4A IPAK
STM32F207VET6
STM32F207VET6
STMicroelectronics
IC MCU 32BIT 512KB FLASH 100LQFP
STM8AF6286TCY
STM8AF6286TCY
STMicroelectronics
IC MCU 8BIT 64KB FLASH 32LQFP
TS921IDT
TS921IDT
STMicroelectronics
IC OPAMP GP 1 CIRCUIT 8SOIC
LM2904WHYDT
LM2904WHYDT
STMicroelectronics
IC OPAMP GP 2 CIRCUIT 8SOIC
TS393IPT
TS393IPT
STMicroelectronics
IC COMPARATOR DUAL MCRPWR 8TSSOP
M27C1001-12B1
M27C1001-12B1
STMicroelectronics
IC EPROM 1MBIT PARALLEL 32DIP
M24256-BWMN6T
M24256-BWMN6T
STMicroelectronics
IC EEPROM 256KBIT I2C 1MHZ 8SO
VIPER27LDTR
VIPER27LDTR
STMicroelectronics
IC OFFLINE SWITCH FLYBACK 16SO
ST1S10PHR
ST1S10PHR
STMicroelectronics
IC REG BUCK ADJ 3A POWERSO-8
LM217MDT-TR
LM217MDT-TR
STMicroelectronics
IC REG LINEAR POS ADJ 500MA DPAK