STQ1HNK60R-AP
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STMicroelectronics STQ1HNK60R-AP

Manufacturer No:
STQ1HNK60R-AP
Manufacturer:
STMicroelectronics
Package:
Cut Tape (CT)
Description:
MOSFET N-CH 600V 400MA TO92-3
Delivery:
Payment:
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iso45001
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Product Introduction

Overview

The STQ1HNK60R-AP is a high-voltage N-channel Power MOSFET developed by STMicroelectronics. This device utilizes ST's advanced SuperMESH™ technology and STripFET F8 technology, featuring an enhanced trench gate structure. It is designed to provide high performance and reliability in various power management applications. The MOSFET is Zener-protected and 100% avalanche tested, ensuring robust operation under demanding conditions.

Key Specifications

ParameterValue
Drain-Source Voltage (Vds)600 V
Drain Current (Id)0.25 A (continuous), 1.6 A (pulsed)
Power Dissipation (Pd)3 W
On-Resistance (Rds(on))7.3 Ω @ 10 V, 0.5 A
Minimum Operating Temperature-55 °C
Maximum Operating Temperature+150 °C
Channel ModeEnhancement
PackagingTO-92-3

Key Features

  • Zener-protected for enhanced reliability
  • 100% avalanche tested to ensure robust performance
  • Utilizes ST's SuperMESH™ and STripFET F8 technologies for improved efficiency
  • High voltage capability with a drain-source voltage of 600 V
  • Low on-resistance of 7.3 Ω @ 10 V, 0.5 A
  • Wide operating temperature range from -55 °C to +150 °C

Applications

The STQ1HNK60R-AP is ideal for various power management applications, including:

  • Flyback converters
  • LED lighting systems
  • High-voltage power supplies
  • Industrial and consumer electronics requiring high reliability and efficiency

Q & A

  1. What is the drain-source voltage of the STQ1HNK60R-AP?
    The drain-source voltage (Vds) is 600 V.
  2. What is the continuous drain current of the STQ1HNK60R-AP?
    The continuous drain current (Id) is 0.25 A.
  3. What is the pulsed drain current of the STQ1HNK60R-AP?
    The pulsed drain current is 1.6 A.
  4. What technology does the STQ1HNK60R-AP use?
    The device utilizes ST's SuperMESH™ and STripFET F8 technologies.
  5. Is the STQ1HNK60R-AP Zener-protected?
    Yes, the STQ1HNK60R-AP is Zener-protected.
  6. What is the on-resistance of the STQ1HNK60R-AP?
    The on-resistance (Rds(on)) is 7.3 Ω @ 10 V, 0.5 A.
  7. What is the maximum operating temperature of the STQ1HNK60R-AP?
    The maximum operating temperature is +150 °C.
  8. What are some typical applications of the STQ1HNK60R-AP?
    Typical applications include flyback converters, LED lighting systems, and high-voltage power supplies.
  9. What is the packaging type of the STQ1HNK60R-AP?
    The packaging type is TO-92-3.
  10. Is the STQ1HNK60R-AP 100% avalanche tested?
    Yes, the STQ1HNK60R-AP is 100% avalanche tested.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:400mA (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:8.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:3.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:10 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:156 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-92-3
Package / Case:TO-226-3, TO-92-3 (TO-226AA)
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