STQ1HNK60R-AP
  • Share:

STMicroelectronics STQ1HNK60R-AP

Manufacturer No:
STQ1HNK60R-AP
Manufacturer:
STMicroelectronics
Package:
Cut Tape (CT)
Description:
MOSFET N-CH 600V 400MA TO92-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STQ1HNK60R-AP is a high-voltage N-channel Power MOSFET developed by STMicroelectronics. This device utilizes ST's advanced SuperMESH™ technology and STripFET F8 technology, featuring an enhanced trench gate structure. It is designed to provide high performance and reliability in various power management applications. The MOSFET is Zener-protected and 100% avalanche tested, ensuring robust operation under demanding conditions.

Key Specifications

ParameterValue
Drain-Source Voltage (Vds)600 V
Drain Current (Id)0.25 A (continuous), 1.6 A (pulsed)
Power Dissipation (Pd)3 W
On-Resistance (Rds(on))7.3 Ω @ 10 V, 0.5 A
Minimum Operating Temperature-55 °C
Maximum Operating Temperature+150 °C
Channel ModeEnhancement
PackagingTO-92-3

Key Features

  • Zener-protected for enhanced reliability
  • 100% avalanche tested to ensure robust performance
  • Utilizes ST's SuperMESH™ and STripFET F8 technologies for improved efficiency
  • High voltage capability with a drain-source voltage of 600 V
  • Low on-resistance of 7.3 Ω @ 10 V, 0.5 A
  • Wide operating temperature range from -55 °C to +150 °C

Applications

The STQ1HNK60R-AP is ideal for various power management applications, including:

  • Flyback converters
  • LED lighting systems
  • High-voltage power supplies
  • Industrial and consumer electronics requiring high reliability and efficiency

Q & A

  1. What is the drain-source voltage of the STQ1HNK60R-AP?
    The drain-source voltage (Vds) is 600 V.
  2. What is the continuous drain current of the STQ1HNK60R-AP?
    The continuous drain current (Id) is 0.25 A.
  3. What is the pulsed drain current of the STQ1HNK60R-AP?
    The pulsed drain current is 1.6 A.
  4. What technology does the STQ1HNK60R-AP use?
    The device utilizes ST's SuperMESH™ and STripFET F8 technologies.
  5. Is the STQ1HNK60R-AP Zener-protected?
    Yes, the STQ1HNK60R-AP is Zener-protected.
  6. What is the on-resistance of the STQ1HNK60R-AP?
    The on-resistance (Rds(on)) is 7.3 Ω @ 10 V, 0.5 A.
  7. What is the maximum operating temperature of the STQ1HNK60R-AP?
    The maximum operating temperature is +150 °C.
  8. What are some typical applications of the STQ1HNK60R-AP?
    Typical applications include flyback converters, LED lighting systems, and high-voltage power supplies.
  9. What is the packaging type of the STQ1HNK60R-AP?
    The packaging type is TO-92-3.
  10. Is the STQ1HNK60R-AP 100% avalanche tested?
    Yes, the STQ1HNK60R-AP is 100% avalanche tested.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:400mA (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:8.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:3.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:10 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:156 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-92-3
Package / Case:TO-226-3, TO-92-3 (TO-226AA)
0 Remaining View Similar

In Stock

$0.70
1,173

Please send RFQ , we will respond immediately.

Same Series
STN1HNK60
STN1HNK60
MOSFET N-CH 600V 400MA SOT223
STD1NK60T4
STD1NK60T4
MOSFET N-CH 600V 1A DPAK
STD1NK60-1
STD1NK60-1
MOSFET N-CH 600V 1A IPAK

Related Product By Categories

BSS123NH6327XTSA1
BSS123NH6327XTSA1
Infineon Technologies
MOSFET N-CH 100V 190MA SOT23-3
IRF4905PBF
IRF4905PBF
Infineon Technologies
MOSFET P-CH 55V 74A TO220AB
STP80NF70
STP80NF70
STMicroelectronics
MOSFET N-CH 68V 98A TO220AB
STD10NM60N
STD10NM60N
STMicroelectronics
MOSFET N-CH 600V 10A DPAK
FQD7P06TM
FQD7P06TM
onsemi
MOSFET P-CH 60V 5.4A DPAK
PSMN0R9-25YLDX
PSMN0R9-25YLDX
Nexperia USA Inc.
MOSFET N-CH 25V 300A LFPAK56
STV270N4F3
STV270N4F3
STMicroelectronics
MOSFET N-CH 40V 270A 10POWERSO
PMV50XP215
PMV50XP215
NXP USA Inc.
P-CHANNEL MOSFET
NX7002AKVL
NX7002AKVL
Nexperia USA Inc.
MOSFET N-CH 60V 190MA TO236AB
STU10N60M2
STU10N60M2
STMicroelectronics
MOSFET N-CH 600V 7.5A IPAK
NX3008NBKT,115
NX3008NBKT,115
NXP USA Inc.
MOSFET N-CH 30V 350MA SC75
NTNS3A65PZT5GHW
NTNS3A65PZT5GHW
onsemi
MOSFET P-CH 20V 281MA SOT883

Related Product By Brand

STTH802CB-TR
STTH802CB-TR
STMicroelectronics
DIODE ARRAY GP 200V 4A DPAK
BYT71-800
BYT71-800
STMicroelectronics
DIODE GEN PURP 800V 6A TO220AC
STF14NM50N
STF14NM50N
STMicroelectronics
MOSFET N-CH 500V 12A TO220FP
STD10NF10T4
STD10NF10T4
STMicroelectronics
MOSFET N-CH 100V 13A DPAK
STM32L496VET6
STM32L496VET6
STMicroelectronics
IC MCU 32BIT 512KB FLASH 100LQFP
STM32F103VFT7
STM32F103VFT7
STMicroelectronics
IC MCU 32BIT 768KB FLASH 100LQFP
M27C1001-12B1
M27C1001-12B1
STMicroelectronics
IC EPROM 1MBIT PARALLEL 32DIP
M27C4002-80C6
M27C4002-80C6
STMicroelectronics
IC EPROM 4MBIT PARALLEL 44PLCC
M27C256B-90B6
M27C256B-90B6
STMicroelectronics
IC EPROM 256KBIT PARALLEL 28DIP
L9301-TR
L9301-TR
STMicroelectronics
IC PWR DRIVER N-CHANNEL PWRSSO36
VB325SP13TR
VB325SP13TR
STMicroelectronics
IC PWR DRVR BIPOLAR 1:1 PWRSO10
L78M05CDT
L78M05CDT
STMicroelectronics
IC REG LINEAR 5V 500MA DPAK