Overview
The STD1NK60T4 is a high-voltage N-channel Power MOSFET developed by STMicroelectronics using the advanced SuperMESH™ technology. This device is optimized from the well-established PowerMESH™ technology, offering significant reductions in on-resistance and enhanced dv/dt capability. The STD1NK60T4 is packaged in a DPAK (TO-252) package, making it suitable for a variety of low-power applications that require high reliability and performance.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | 600 | V |
| Drain-Source Breakdown Voltage (V(BR)DSS) | 600 | V |
| Gate-Source Voltage (VGS) | ±30 | V |
| Continuous Drain Current (ID) at TC = 25 °C | 1.0 | A |
| Continuous Drain Current (ID) at TC = 100 °C | 0.63 | A |
| Pulsed Drain Current (IDM) | 4 | A |
| Total Power Dissipation (PTOT) at TC = 25 °C | 30 | W |
| Avalanche Current (IAR) | 1 | A |
| Single Pulse Avalanche Energy (EAS) | 25 | mJ |
| Peak Diode Recovery Voltage Slope (dv/dt) | 3 | V/ns |
| Operating Junction Temperature Range (TJ) | -55 to 150 | °C |
| Thermal Resistance Junction-Case (Rthj-case) | 4.2 | °C/W |
| Thermal Resistance Junction-Ambient (Rthj-amb) | 100 | °C/W |
| Static Drain-Source On-Resistance (RDS(on)) | 7.3 - 8.5 | Ω |
Key Features
- Extremely high dv/dt capability, making it suitable for demanding applications.
- Improved ESD capability for enhanced reliability.
- 100% avalanche tested to ensure robustness against transient conditions.
- Minimized gate charge for efficient switching performance.
- High voltage rating of 600 V and low on-resistance of 7.3 Ω (typical).
Applications
- Low power battery chargers.
- Switch mode low power supplies (SMPS).
- Low power ballast and compact fluorescent lamps (CFL).
Q & A
- What is the maximum drain-source voltage (VDS) of the STD1NK60T4?
The maximum drain-source voltage (VDS) is 600 V.
- What is the typical on-resistance (RDS(on)) of the STD1NK60T4?
The typical on-resistance (RDS(on)) is 7.3 Ω.
- What are the key features of the STD1NK60T4?
The key features include extremely high dv/dt capability, improved ESD capability, 100% avalanche tested, and minimized gate charge.
- What are the typical applications of the STD1NK60T4?
The typical applications include low power battery chargers, switch mode low power supplies (SMPS), and low power ballast and CFL.
- What is the operating junction temperature range of the STD1NK60T4?
The operating junction temperature range is -55 to 150 °C.
- What is the thermal resistance junction-case (Rthj-case) of the STD1NK60T4?
The thermal resistance junction-case (Rthj-case) is 4.2 °C/W.
- What is the maximum continuous drain current (ID) at TC = 25 °C?
The maximum continuous drain current (ID) at TC = 25 °C is 1.0 A.
- What is the single pulse avalanche energy (EAS) of the STD1NK60T4?
The single pulse avalanche energy (EAS) is 25 mJ.
- What is the peak diode recovery voltage slope (dv/dt) of the STD1NK60T4?
The peak diode recovery voltage slope (dv/dt) is 3 V/ns.
- In what package is the STD1NK60T4 available?
The STD1NK60T4 is available in a DPAK (TO-252) package.
