Overview
The STP4NK80ZFP is a high-voltage N-channel Power MOSFET developed by STMicroelectronics using the advanced SuperMESH technology. This device is optimized for high-performance applications, offering a significant reduction in on-resistance and enhanced dv/dt capability. The STP4NK80ZFP is packaged in a TO-220FP package, making it suitable for a variety of demanding switching applications. It features Zener protection, minimized gate charge, and very low intrinsic capacitance, ensuring reliable and efficient operation.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| VDS (Drain-source voltage) | 800 | V |
| VGS (Gate-source voltage) | ±30 | V |
| ID (Continuous drain current at TC = 25°C) | 3 | A |
| ID (Continuous drain current at TC = 100°C) | 1.89 | A |
| IDM (Pulsed drain current) | 12 | A |
| RDS(on) (On-resistance) | 3.5 Ω (max), 2.7 Ω (typ) | Ω |
| PTOT (Total power dissipation at TC = 25°C) | 25 | W |
| Tstg (Storage temperature range) | -55 to 150 | °C |
| TJ (Operating junction temperature range) | -55 to 150 | °C |
| RthJC (Thermal resistance, junction-to-case) | 5 | °C/W |
| RthJA (Thermal resistance, junction-to-ambient) | 62.5 | °C/W |
Key Features
- High-voltage operation with a drain-source voltage (VDS) of up to 800 V
- Low on-resistance (RDS(on)) of 2.7 Ω (typ) and 3.5 Ω (max)
- High continuous drain current of 3 A at TC = 25°C and 1.89 A at TC = 100°C
- Pulsed drain current capability of up to 12 A
- 100% avalanche tested for reliability
- Minimized gate charge for efficient switching
- Very low intrinsic capacitance
- Zener protection for enhanced robustness
- High dv/dt capability for demanding applications
Applications
- Switching applications, including power supplies and converters
- High-voltage power management systems
- Motor control and drive systems
- Industrial automation and control systems
- Aerospace and defense applications requiring high reliability
Q & A
- What is the maximum drain-source voltage (VDS) of the STP4NK80ZFP?
The maximum drain-source voltage (VDS) is 800 V.
- What is the typical on-resistance (RDS(on)) of the STP4NK80ZFP?
The typical on-resistance (RDS(on)) is 2.7 Ω.
- What is the continuous drain current (ID) at TC = 25°C?
The continuous drain current (ID) at TC = 25°C is 3 A.
- What is the pulsed drain current (IDM) capability of the STP4NK80ZFP?
The pulsed drain current (IDM) capability is up to 12 A.
- Is the STP4NK80ZFP 100% avalanche tested?
Yes, the STP4NK80ZFP is 100% avalanche tested.
- What is the thermal resistance, junction-to-case (RthJC), of the STP4NK80ZFP?
The thermal resistance, junction-to-case (RthJC), is 5 °C/W.
- What is the package type of the STP4NK80ZFP?
The package type is TO-220FP.
- What are the key features of the SuperMESH technology used in the STP4NK80ZFP?
The SuperMESH technology offers low on-resistance, high dv/dt capability, minimized gate charge, and very low intrinsic capacitance.
- What are some common applications for the STP4NK80ZFP?
Common applications include switching applications, high-voltage power management systems, motor control, industrial automation, and aerospace and defense systems.
- What is the storage temperature range for the STP4NK80ZFP?
The storage temperature range is -55 to 150 °C.
