STN1NF20
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STMicroelectronics STN1NF20

Manufacturer No:
STN1NF20
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 200V 1A SOT-223
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STN1NF20 is a high-performance N-channel power MOSFET developed by STMicroelectronics. This device is part of STMicroelectronics' STripFET™ family, designed to optimize performance and minimize input capacitance. The STN1NF20 is packaged in a SOT-223 surface mount format, making it suitable for a wide range of applications requiring high power density and efficiency.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)200 V
ID (Continuous Drain Current)1 A
RDS(on) (On-State Resistance)1.1 Ω at VGS = 10 V, ID = 500 mA
PD (Power Dissipation)2 W at TA = 25°C
VGS(th) (Threshold Voltage)4 V at ID = 250 μA
IDM (Peak Drain Current)4 A
PackageSOT-223

Key Features

  • High voltage rating of 200 V, making it suitable for high-power applications.
  • Low on-state resistance (RDS(on)) of 1.1 Ω, which minimizes power losses.
  • High current capability with a continuous drain current of 1 A and peak drain current of 4 A.
  • Compact SOT-223 package for efficient use of board space.
  • Developed using STMicroelectronics' STripFET™ process for enhanced performance and reduced input capacitance.

Applications

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Audio amplifiers and high-power audio systems.
  • Industrial control and automation systems.
  • Automotive electronics, including battery management and power distribution.

Q & A

  1. What is the maximum drain-source voltage of the STN1NF20?
    The maximum drain-source voltage (VDS) of the STN1NF20 is 200 V.
  2. What is the continuous drain current rating of the STN1NF20?
    The continuous drain current (ID) rating of the STN1NF20 is 1 A.
  3. What is the on-state resistance of the STN1NF20?
    The on-state resistance (RDS(on)) of the STN1NF20 is 1.1 Ω at VGS = 10 V, ID = 500 mA.
  4. What is the power dissipation rating of the STN1NF20?
    The power dissipation (PD) rating of the STN1NF20 is 2 W at TA = 25°C.
  5. What is the threshold voltage of the STN1NF20?
    The threshold voltage (VGS(th)) of the STN1NF20 is 4 V at ID = 250 μA.
  6. What is the peak drain current rating of the STN1NF20?
    The peak drain current (IDM) rating of the STN1NF20 is 4 A.
  7. What package type is the STN1NF20 available in?
    The STN1NF20 is available in the SOT-223 package.
  8. What process is used to develop the STN1NF20?
    The STN1NF20 is developed using STMicroelectronics' STripFET™ process.
  9. What are some common applications of the STN1NF20?
    The STN1NF20 is commonly used in power supplies, DC-DC converters, motor control systems, audio amplifiers, and automotive electronics.
  10. Is the STN1NF20 RoHS compliant?
    Yes, the STN1NF20 is RoHS compliant.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:1A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:5.7 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:90 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-223
Package / Case:TO-261-4, TO-261AA
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Similar Products

Part Number STN1NF20 STN1N20 STN1NF10
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 200 V 100 V
Current - Continuous Drain (Id) @ 25°C 1A (Tc) 1A (Tc) 1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 1.5Ohm @ 500mA, 10V 1.5Ohm @ 500mA, 10V 800mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 5V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 5.7 nC @ 10 V 15.7 nC @ 10 V 6 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 90 pF @ 25 V 206 pF @ 25 V 105 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 2W (Ta) 2.9W (Tc) 2.5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-223 SOT-223 SOT-223
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA

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