STN1N20
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STMicroelectronics STN1N20

Manufacturer No:
STN1N20
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 200V 1A SOT223
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STN1NF20 is a high-performance N-channel Power MOSFET developed by STMicroelectronics using their unique STripFET™ II process. This device is designed to minimize input capacitance and gate charge, making it highly suitable for advanced high-efficiency isolated DC-DC converters and other applications requiring low gate charge driving.

Key Specifications

Parameter Value Unit
Order Code STN1NF20
VDSS (Drain-Source Breakdown Voltage) 200 V
RDS(on) max (Static Drain-Source On Resistance) 1.5 Ω
ID (Drain Current Continuous) 1 A
IDM (Drain Current Pulsed) 4 A
VGS (Gate-Source Voltage) ±20 V
Tj (Operating Junction Temperature) -55 to 150 °C
Rthj-amb (Thermal Resistance Junction to Ambient) 62.50 °C/W
Package SOT-223

Key Features

  • 100% avalanche tested
  • Low gate charge
  • Exceptional dv/dt capability
  • Low input capacitance and gate charge due to STripFET™ II process
  • Suitable for high-efficiency isolated DC-DC converters
  • Available in ECOPACK® packages for environmental compliance

Applications

  • Switching applications
  • Advanced high-efficiency isolated DC-DC converters for telecom and computer applications
  • Applications with low gate charge driving requirements

Q & A

  1. What is the maximum drain-source breakdown voltage (VDSS) of the STN1NF20?

    The maximum drain-source breakdown voltage (VDSS) is 200 V.

  2. What is the maximum static drain-source on resistance (RDS(on)) of the STN1NF20?

    The maximum static drain-source on resistance (RDS(on)) is 1.5 Ω.

  3. What is the continuous drain current (ID) rating of the STN1NF20?

    The continuous drain current (ID) rating is 1 A.

  4. What is the thermal resistance junction to ambient (Rthj-amb) of the STN1NF20?

    The thermal resistance junction to ambient (Rthj-amb) is 62.50 °C/W.

  5. In what package is the STN1NF20 available?

    The STN1NF20 is available in the SOT-223 package.

  6. What are the key features of the STN1NF20?

    The key features include 100% avalanche testing, low gate charge, exceptional dv/dt capability, and low input capacitance and gate charge.

  7. What are the typical applications of the STN1NF20?

    The typical applications include switching applications, high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements.

  8. What is the operating junction temperature range of the STN1NF20?

    The operating junction temperature range is -55 to 150 °C.

  9. Is the STN1NF20 available in environmentally compliant packages?
  10. What is the maximum gate-source voltage (VGS) of the STN1NF20?

    The maximum gate-source voltage (VGS) is ±20 V.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:1A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:15.7 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:206 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2.9W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-223
Package / Case:TO-261-4, TO-261AA
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Similar Products

Part Number STN1N20 STN1NF20
Manufacturer STMicroelectronics STMicroelectronics
Product Status Obsolete Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 200 V
Current - Continuous Drain (Id) @ 25°C 1A (Tc) 1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 1.5Ohm @ 500mA, 10V 1.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15.7 nC @ 10 V 5.7 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 206 pF @ 25 V 90 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 2.9W (Tc) 2W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-223 SOT-223
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA

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