Overview
The STGW80H65DFB-4 is a high-performance Insulated Gate Bipolar Transistor (IGBT) developed by STMicroelectronics. It is part of the new HB series of IGBTs, which offers an optimal balance between conduction and switching losses to maximize the efficiency of frequency converters. This device utilizes an advanced proprietary trench gate field-stop structure, ensuring high-speed switching capabilities and minimized tail current.
Key Specifications
| Symbol | Parameter | Value | Unit |
|---|---|---|---|
| VCES | Collector-emitter voltage (VGE = 0) | 650 | V |
| IC | Continuous collector current at TC = 25 °C | 120 (1) | A |
| IC | Continuous collector current at TC = 100 °C | 80 | A |
| ICP | Pulsed collector current (tp ≤ 1 μs, TJ < 175 °C) | 300 | A |
| VGE | Gate-emitter voltage | ±20 | V |
| VGE | Transient gate-emitter voltage | ±30 | V |
| TJ | Operating junction temperature range | -55 to 175 | °C |
| RthJC | Thermal resistance junction-case (IGBT) | 0.32 | °C/W |
| VCE(sat) | Collector-emitter saturation voltage (VGE = 15 V, IC = 80 A) | 1.6 (typ.) | V |
Key Features
- High-speed switching series with minimized tail current
- Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 80 A
- Tight parameter distribution for safer paralleling operation
- Positive VCE(sat) temperature coefficient
- Low thermal resistance
- Very fast soft recovery antiparallel diode
Applications
- Photovoltaic inverters
- High frequency converters
Q & A
- What is the maximum collector-emitter voltage of the STGW80H65DFB-4?
The maximum collector-emitter voltage (VCES) is 650 V.
- What is the continuous collector current at 25 °C and 100 °C?
The continuous collector current is 120 A at 25 °C and 80 A at 100 °C.
- What is the pulsed collector current?
The pulsed collector current (ICP) is 300 A for tp ≤ 1 μs and TJ < 175 °C.
- What is the operating junction temperature range?
The operating junction temperature range is -55 to 175 °C.
- What is the thermal resistance junction-case for the IGBT?
The thermal resistance junction-case (RthJC) for the IGBT is 0.32 °C/W.
- What is the collector-emitter saturation voltage at typical conditions?
The collector-emitter saturation voltage (VCE(sat)) is 1.6 V (typ.) at VGE = 15 V and IC = 80 A.
- What are the key applications of the STGW80H65DFB-4?
The key applications include photovoltaic inverters and high frequency converters.
- What is the significance of the trench gate field-stop structure in this IGBT?
The trench gate field-stop structure enhances high-speed switching capabilities and minimizes tail current.
- What is the benefit of the positive VCE(sat) temperature coefficient?
The positive VCE(sat) temperature coefficient ensures safer paralleling operation due to tight parameter distribution.
- What is the thermal resistance junction-ambient for this device?
The thermal resistance junction-ambient (RthJA) is 50 °C/W.
