STGB10NB37LZT4
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STMicroelectronics STGB10NB37LZT4

Manufacturer No:
STGB10NB37LZT4
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
IGBT 440V 20A 125W D2PAK
Delivery:
Payment:
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Product Introduction

Overview

The STGB10NB37LZT4 is an advanced N-channel Insulated Gate Bipolar Transistor (IGBT) produced by STMicroelectronics. This device is part of the PowerMESH™ IGBT family, which utilizes the latest high-voltage technology based on a patented strip layout. The STGB10NB37LZT4 is designed to offer outstanding performance with features such as low threshold voltage, low on-voltage drop, low gate charge, and high current capability. It also includes a built-in collector-gate zener for precise active clamping and a gate-emitter zener for ESD protection.

Key Specifications

Parameter Value Unit
Collector-Emitter Voltage (VCE) 440 V
Collector Current (IC) Continuous 20 A
Collector Current (ICM) Pulse 60 A
Total Dissipation (PTOT) at TC = 25°C 125 W
Derating Factor 0.83 W/°C
Storage Temperature (Tstg) -65 to 175 °C
Max. Operating Junction Temperature (Tj) 175 °C
Gate-Emitter Voltage (VGE) ± 16 V
Collector-Emitter Saturation Voltage (VCE(SAT)) 1.2 - 1.8 V
Gate Charge (Qg) 28 nC
Thermal Resistance Junction-case (Rthj-case) 1.2 °C/W
Thermal Resistance Junction-ambient (Rthj-amb) 62.5 °C/W

Key Features

  • Internally clamped PowerMESH™ IGBT technology for high performance.
  • Low threshold voltage and low on-voltage drop.
  • Low gate charge for efficient switching.
  • High current capability with a continuous collector current of 20 A and a pulse current of 60 A.
  • Built-in collector-gate zener for precise active clamping and gate-emitter zener for ESD protection.
  • High voltage clamping feature for enhanced reliability.
  • Low thermal resistance, especially in the D2PAK package.

Applications

  • Automotive ignition systems.
  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • High-frequency switching applications.
  • Industrial power electronics.

Q & A

  1. What is the maximum collector-emitter voltage of the STGB10NB37LZT4?

    The maximum collector-emitter voltage (VCE) is 440 V.

  2. What is the continuous collector current rating of this IGBT?

    The continuous collector current (IC) is 20 A.

  3. What is the pulse collector current rating?

    The pulse collector current (ICM) is 60 A.

  4. What is the total dissipation at 25°C?

    The total dissipation (PTOT) at 25°C is 125 W.

  5. What is the maximum operating junction temperature?

    The maximum operating junction temperature (Tj) is 175°C.

  6. What is the gate-emitter voltage range?

    The gate-emitter voltage (VGE) range is ± 16 V.

  7. What are the thermal resistance values for this IGBT?

    The thermal resistance junction-case (Rthj-case) is 1.2 °C/W, and the thermal resistance junction-ambient (Rthj-amb) is 62.5 °C/W.

  8. What are some common applications for the STGB10NB37LZT4?

    Common applications include automotive ignition systems, power supplies, motor control and drive systems, high-frequency switching applications, and industrial power electronics.

  9. What is the significance of the built-in collector-gate zener and gate-emitter zener?

    The built-in collector-gate zener provides precise active clamping, while the gate-emitter zener supplies ESD protection.

  10. What package type is the STGB10NB37LZT4 available in?

    The STGB10NB37LZT4 is available in the D2PAK package.

Product Attributes

IGBT Type:- 
Voltage - Collector Emitter Breakdown (Max):440 V
Current - Collector (Ic) (Max):20 A
Current - Collector Pulsed (Icm):40 A
Vce(on) (Max) @ Vge, Ic:1.8V @ 4.5V, 10A
Power - Max:125 W
Switching Energy:2.4mJ (on), 5mJ (off)
Input Type:Standard
Gate Charge:28 nC
Td (on/off) @ 25°C:1.3µs/8µs
Test Condition:328V, 10A, 1kOhm, 5V
Reverse Recovery Time (trr):- 
Operating Temperature:-65°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:D2PAK
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Same Series
STGP10NB37LZ
STGP10NB37LZ
IGBT 440V 20A 125W TO220
STGB10NB37LZ
STGB10NB37LZ
IGBT 440V 20A 125W D2PAK

Similar Products

Part Number STGB10NB37LZT4 STGB20NB37LZT4
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Obsolete
IGBT Type - -
Voltage - Collector Emitter Breakdown (Max) 440 V 425 V
Current - Collector (Ic) (Max) 20 A 40 A
Current - Collector Pulsed (Icm) 40 A 80 A
Vce(on) (Max) @ Vge, Ic 1.8V @ 4.5V, 10A 2V @ 4.5V, 20A
Power - Max 125 W 200 W
Switching Energy 2.4mJ (on), 5mJ (off) 11.8mJ (off)
Input Type Standard Standard
Gate Charge 28 nC 51 nC
Td (on/off) @ 25°C 1.3µs/8µs 2.3µs/2µs
Test Condition 328V, 10A, 1kOhm, 5V 250V, 20A, 1kOhm, 4.5V
Reverse Recovery Time (trr) - -
Operating Temperature -65°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package D2PAK D2PAK

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