Overview
The STGB10NB37LZT4 is an advanced N-channel Insulated Gate Bipolar Transistor (IGBT) produced by STMicroelectronics. This device is part of the PowerMESH™ IGBT family, which utilizes the latest high-voltage technology based on a patented strip layout. The STGB10NB37LZT4 is designed to offer outstanding performance with features such as low threshold voltage, low on-voltage drop, low gate charge, and high current capability. It also includes a built-in collector-gate zener for precise active clamping and a gate-emitter zener for ESD protection.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Emitter Voltage (VCE) | 440 | V |
| Collector Current (IC) Continuous | 20 | A |
| Collector Current (ICM) Pulse | 60 | A |
| Total Dissipation (PTOT) at TC = 25°C | 125 | W |
| Derating Factor | 0.83 | W/°C |
| Storage Temperature (Tstg) | -65 to 175 | °C |
| Max. Operating Junction Temperature (Tj) | 175 | °C |
| Gate-Emitter Voltage (VGE) | ± 16 | V |
| Collector-Emitter Saturation Voltage (VCE(SAT)) | 1.2 - 1.8 | V |
| Gate Charge (Qg) | 28 | nC |
| Thermal Resistance Junction-case (Rthj-case) | 1.2 | °C/W |
| Thermal Resistance Junction-ambient (Rthj-amb) | 62.5 | °C/W |
Key Features
- Internally clamped PowerMESH™ IGBT technology for high performance.
- Low threshold voltage and low on-voltage drop.
- Low gate charge for efficient switching.
- High current capability with a continuous collector current of 20 A and a pulse current of 60 A.
- Built-in collector-gate zener for precise active clamping and gate-emitter zener for ESD protection.
- High voltage clamping feature for enhanced reliability.
- Low thermal resistance, especially in the D2PAK package.
Applications
- Automotive ignition systems.
- Power supplies and DC-DC converters.
- Motor control and drive systems.
- High-frequency switching applications.
- Industrial power electronics.
Q & A
- What is the maximum collector-emitter voltage of the STGB10NB37LZT4?
The maximum collector-emitter voltage (VCE) is 440 V.
- What is the continuous collector current rating of this IGBT?
The continuous collector current (IC) is 20 A.
- What is the pulse collector current rating?
The pulse collector current (ICM) is 60 A.
- What is the total dissipation at 25°C?
The total dissipation (PTOT) at 25°C is 125 W.
- What is the maximum operating junction temperature?
The maximum operating junction temperature (Tj) is 175°C.
- What is the gate-emitter voltage range?
The gate-emitter voltage (VGE) range is ± 16 V.
- What are the thermal resistance values for this IGBT?
The thermal resistance junction-case (Rthj-case) is 1.2 °C/W, and the thermal resistance junction-ambient (Rthj-amb) is 62.5 °C/W.
- What are some common applications for the STGB10NB37LZT4?
Common applications include automotive ignition systems, power supplies, motor control and drive systems, high-frequency switching applications, and industrial power electronics.
- What is the significance of the built-in collector-gate zener and gate-emitter zener?
The built-in collector-gate zener provides precise active clamping, while the gate-emitter zener supplies ESD protection.
- What package type is the STGB10NB37LZT4 available in?
The STGB10NB37LZT4 is available in the D2PAK package.
