Overview
The STGWA50IH65DF is a state-of-the-art Insulated Gate Bipolar Transistor (IGBT) developed by STMicroelectronics. This device is part of the IH series, which utilizes an advanced proprietary trench gate field-stop structure. The STGWA50IH65DF is specifically designed to optimize performance in both conduction and switching losses for soft-commutation applications. It features a co-packaged freewheeling diode with a low drop forward voltage, enhancing efficiency in resonant and soft-switching scenarios.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-emitter voltage (VCES) | 650 | V |
| Continuous collector current at TC = 25 °C | 100 | A |
| Continuous collector current at TC = 100 °C | 50 | A |
| Pulsed collector current (ICP) | 150 | A |
| Gate-emitter voltage (VGE) | ±20 | V |
| Continuous forward current at TC = 25 °C | 50 | A |
| Continuous forward current at TC = 100 °C | 25 | A |
| Pulsed forward current (IFP) | 150 | A |
| Total power dissipation at TC = 25 °C (PTOT) | 300 | W |
| Storage temperature range (TSTG) | -55 to 150 | °C |
| Operating junction temperature range (TJ) | -55 to 175 | °C |
| Thermal resistance junction-case IGBT (RthJC) | 0.5 | °C/W |
| Thermal resistance junction-case diode | 1.47 | °C/W |
| Thermal resistance junction-ambient (RthJA) | 50 | °C/W |
Key Features
- Designed for soft-commutation only
- Maximum junction temperature: TJ = 175 °C
- VCE(sat) = 1.5 V (typ.) @ IC = 50 A
- Minimized tail current
- Tight parameter distribution
- Low thermal resistance
- Low voltage drop freewheeling co-packaged diode
- Positive VCE(sat) temperature coefficient
Applications
- Induction heating
- Resonant converters
- Microwave ovens
Q & A
- Q: What is the STGWA50IH65DF?
A: The STGWA50IH65DF is a 650 V, 50 A IGBT from STMicroelectronics, designed for soft-commutation applications using an advanced trench gate field-stop structure. - Q: What are the key applications of the STGWA50IH65DF?
A: The STGWA50IH65DF is recommended for induction heating, resonant converters, and microwave ovens. - Q: What is the maximum junction temperature of the STGWA50IH65DF?
A: The maximum junction temperature is 175 °C. - Q: What is the typical collector-emitter saturation voltage (VCE(sat)) of the STGWA50IH65DF?
A: The typical VCE(sat) is 1.5 V at IC = 50 A. - Q: Does the STGWA50IH65DF include a freewheeling diode?
A: Yes, it includes a co-packaged freewheeling diode with a low drop forward voltage. - Q: What is the thermal resistance junction-case (RthJC) of the IGBT?
A: The thermal resistance junction-case (RthJC) is 0.5 °C/W. - Q: What package type does the STGWA50IH65DF come in?
A: The STGWA50IH65DF comes in a TO-247 long leads package. - Q: Is the STGWA50IH65DF RoHS compliant?
A: Yes, the STGWA50IH65DF is RoHS compliant with an Ecopack2 grade. - Q: Where can I find detailed specifications and datasheets for the STGWA50IH65DF?
A: Detailed specifications and datasheets can be found on the STMicroelectronics official website and other authorized distributors like Digi-Key, Mouser, and Future Electronics. - Q: What is the warranty period for the STGWA50IH65DF when purchased from authorized sellers?
A: The warranty period can vary depending on the seller, but typically includes a 1-year warranty for defects in materials and workmanship.
