Overview
The STGP40V60F is a high-performance Insulated Gate Bipolar Transistor (IGBT) developed by STMicroelectronics. This device is part of the V series IGBTs, which are known for their advanced proprietary trench gate field-stop structure. The STGP40V60F is designed to offer an optimal balance between conduction and switching losses, making it highly efficient for very high frequency converters. It features a maximum collector-emitter voltage of 600 V and a continuous collector current of 40 A at 100°C, making it suitable for a variety of high-power applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-emitter voltage (VCE) | 600 | V |
| Continuous collector current at TC = 25°C | 80 | A |
| Continuous collector current at TC = 100°C | 40 | A |
| Pulsed collector current | 160 | A |
| Gate-emitter voltage (VGE) | ±20 | V |
| Total power dissipation at TC = 25°C | 283 | W |
| Insulation withstand voltage (RMS) from all three leads to external heat sink | 3.5 kV | |
| Storage temperature range | -55 to 150 | °C |
| Operating junction temperature range | -55 to 175 | °C |
| Thermal resistance, junction-to-case (IGBT) | 0.53 | °C/W |
| Thermal resistance, junction-to-case (diode) | 1.14 | °C/W |
| Thermal resistance, junction-to-ambient | 50 | °C/W |
| Collector-emitter saturation voltage (VCE(sat)) at IC = 40 A, VGE = 15 V | 1.8 | V |
| Gate threshold voltage (VGE(th)) | 5 to 7 | V |
Key Features
- Tight Parameters Distribution: Ensures safer paralleling operation.
- Low Thermal Resistance: Enhances heat dissipation and overall device reliability.
- Very Fast Soft Recovery Antiparallel Diode: Reduces switching losses and improves efficiency.
- Tail-less Switching Off: Minimizes switching times and energy losses.
- Positive VCE(sat) Temperature Coefficient: Helps in maintaining stable performance across a wide temperature range.
Applications
- Welding Equipment: High-power welding applications benefit from the device's high current and voltage ratings.
- Power Factor Correction (PFC): Used in PFC circuits to improve power efficiency.
- Uninterruptible Power Supplies (UPS): Essential for reliable power supply systems.
- Solar Inverters: Suitable for high-efficiency solar power conversion.
- Chargers: High-power charging applications, including electric vehicle chargers.
Q & A
- What is the maximum collector-emitter voltage of the STGP40V60F?
The maximum collector-emitter voltage is 600 V. - What is the continuous collector current at 100°C?
The continuous collector current at 100°C is 40 A. - What is the thermal resistance, junction-to-case for the IGBT?
The thermal resistance, junction-to-case for the IGBT is 0.53 °C/W. - What are the typical applications of the STGP40V60F?
The typical applications include welding equipment, power factor correction, UPS, solar inverters, and chargers. - What is the gate-emitter voltage range for the STGP40V60F?
The gate-emitter voltage range is ±20 V. - What is the maximum junction temperature of the STGP40V60F?
The maximum junction temperature is 175 °C. - What is the total power dissipation at TC = 25°C?
The total power dissipation at TC = 25°C is 283 W. - Does the STGP40V60F have a positive VCE(sat) temperature coefficient?
Yes, it has a positive VCE(sat) temperature coefficient. - What is the collector-emitter saturation voltage (VCE(sat)) at IC = 40 A, VGE = 15 V?
The collector-emitter saturation voltage (VCE(sat)) at IC = 40 A, VGE = 15 V is typically 1.8 V. - Is the STGP40V60F suitable for high-frequency converters?
Yes, it is designed to maximize efficiency in very high frequency converters.
