Overview
The STGF20H60DF is a high-speed trench gate field-stop Insulated Gate Bipolar Transistor (IGBT) developed by STMicroelectronics. This device is designed to offer an optimal balance between conduction and switching losses, making it highly efficient for very high frequency converters. The IGBT features a positive VCE(sat) temperature coefficient and tight parameter distribution, which facilitates easier paralleling operations. It is available in the TO-220FP package, making it suitable for a variety of power management applications.
Key Specifications
| Parameter | Unit | Min. | Typ. | Max. |
|---|---|---|---|---|
| Collector-Emitter Voltage (VCE) | V | - | - | 600 |
| Continuous Collector Current at TC = 25°C | A | - | - | 40 |
| Continuous Collector Current at TC = 100°C | A | - | - | 20 |
| Pulsed Collector Current | A | - | - | 80 |
| Gate-Emitter Voltage (VGE) | V | - | - | ±20 |
| Total Power Dissipation at TC = 25°C | W | - | - | 167 |
| Thermal Resistance Junction-Case (RthJC) IGBT | °C/W | - | - | 0.9 |
| Thermal Resistance Junction-Ambient (RthJA) | °C/W | - | - | 62.5 |
| Collector-Emitter Saturation Voltage (VCE(sat)) at IC = 20 A, VGE = 15 V | V | 1.6 | 2.0 | - |
| Gate Threshold Voltage (VGE(th)) at IC = 1 mA | V | 5.0 | 6.0 | 7.0 |
Key Features
- High Speed Switching: Optimized for high-frequency applications.
- Tight Parameters Distribution: Facilitates easier paralleling operations.
- Safe Paralleling: Ensures reliable operation in parallel configurations.
- Low Thermal Resistance: Enhances heat dissipation efficiency.
- Short-Circuit Rated: Capable of withstanding short-circuit conditions.
- Ultrafast Soft Recovery Antiparallel Diode: Reduces switching losses and improves overall efficiency.
Applications
- Motor Control: Suitable for high-performance motor control systems.
- UPS and PFC: Ideal for uninterruptible power supplies and power factor correction applications.
Q & A
- What is the maximum collector-emitter voltage of the STGF20H60DF IGBT?
The maximum collector-emitter voltage (VCE) is 600 V.
- What is the continuous collector current at 25°C and 100°C?
The continuous collector current is 40 A at 25°C and 20 A at 100°C.
- What is the maximum gate-emitter voltage?
The maximum gate-emitter voltage (VGE) is ±20 V.
- What is the total power dissipation at 25°C?
The total power dissipation at 25°C is 167 W.
- What are the thermal resistance values for junction-case and junction-ambient?
The thermal resistance junction-case (RthJC) is 0.9 °C/W, and the thermal resistance junction-ambient (RthJA) is 62.5 °C/W.
- What is the collector-emitter saturation voltage (VCE(sat)) at IC = 20 A and VGE = 15 V?
The collector-emitter saturation voltage (VCE(sat)) is between 1.6 V and 2.0 V.
- What are the typical applications of the STGF20H60DF IGBT?
The STGF20H60DF is typically used in motor control, UPS, and PFC applications.
- What are the key features of the STGF20H60DF IGBT?
The key features include high speed switching, tight parameters distribution, safe paralleling, low thermal resistance, short-circuit rating, and an ultrafast soft recovery antiparallel diode.
- What package type is the STGF20H60DF available in?
The STGF20H60DF is available in the TO-220FP package.
- What is the significance of the positive VCE(sat) temperature coefficient?
The positive VCE(sat) temperature coefficient makes it easier to parallel multiple devices, ensuring stable operation.
