Overview
The IKW75N60TA is a high-performance Insulated Gate Bipolar Transistor (IGBT) produced by Infineon Technologies. This component is part of the TRENCHSTOP™ series and features a 600 V, 75 A IGBT discrete with an anti-parallel diode, packaged in a TO-247 package. The combination of trench-cell and fieldstop technology enhances both static and dynamic performance, making it ideal for applications requiring high efficiency and low switching losses.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Collector-emitter voltage | VCE | 600 | V |
| DC collector current (TC = 25°C) | IC | 75 | A |
| Pulsed collector current (TC = 25°C, tp limited by Tjmax) | ICp | 225 | A |
| Diode forward current (TC = 25°C) | IF | 75 | A |
| Diode pulsed current (TC = 25°C, tp limited by Tjmax) | IFp | 225 | A |
| Gate-emitter voltage | VGE | ±20 | V |
| Short circuit withstand time | tSC | 5 μs | |
| Maximum junction temperature | Tj | 175°C | |
| Power dissipation (TC = 25°C) | Ptot | 428 W | |
| Storage temperature | Tstg | -55 to +150°C | |
| Soldering temperature | Tsold | 260°C (for 10s, measured 5mm from case) |
Key Features
- Very low VCE(sat) of 1.5 V (typical) for lower conduction losses
- Low switching losses due to the combination of trench-cell and fieldstop technology
- Easy parallel switching capability due to positive temperature coefficient in VCE(sat)
- Very soft, fast recovery anti-parallel emitter controlled diode
- High ruggedness and temperature stable behavior
- Low EMI emissions
- Low gate charge
- Tight parameter distribution
- Pb-free lead plating; RoHS compliant
Applications
- Frequency converters
- Uninterruptible Power Supplies (UPS)
Q & A
- What is the collector-emitter voltage rating of the IKW75N60TA?
The collector-emitter voltage rating is 600 V. - What is the maximum DC collector current at 25°C?
The maximum DC collector current at 25°C is 75 A. - What is the short circuit withstand time of the IKW75N60TA?
The short circuit withstand time is 5 μs. - What is the maximum junction temperature for this IGBT?
The maximum junction temperature is 175°C. - Does the IKW75N60TA have a soft recovery diode?
Yes, it features a very soft, fast recovery anti-parallel emitter controlled diode. - Is the IKW75N60TA RoHS compliant?
Yes, it is Pb-free and RoHS compliant. - What are the typical applications for the IKW75N60TA?
Typical applications include frequency converters and uninterruptible power supplies (UPS). - What is the power dissipation rating at 25°C?
The power dissipation rating at 25°C is 428 W. - What is the storage temperature range for the IKW75N60TA?
The storage temperature range is -55 to +150°C. - How does the IKW75N60TA reduce EMI emissions?
The IKW75N60TA is designed to have low EMI emissions due to its advanced technology and design.
