Overview
The FGA25N120ANTDTU-F109 is a 1200 V NPT (Non-Punch Through) Trench IGBT (Insulated Gate Bipolar Transistor) produced by onsemi. This device utilizes onsemi’s proprietary trench design and advanced NPT technology to offer superior conduction and switching performances. It is designed to provide high avalanche ruggedness and ease of parallel operation, making it suitable for various high-power applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Emitter Voltage (VCES) | 1200 | V |
| Gate-Emitter Voltage (VGES) | ±20 | V |
| Collector Current (IC) at TC = 25°C | 50 | A |
| Collector Current (IC) at TC = 100°C | 25 | A |
| Pulsed Collector Current (ICM) | 90 | A |
| Continuous Forward Current (IF) at TC = 25°C | 50 | A |
| Maximum Forward Current (IFM) | 150 | A |
| Maximum Power Dissipation at TC = 25°C | 312 | W |
| Operating Temperature Range | -55 to +150 | °C |
| Thermal Resistance, Junction to Case (RθJC) | 0.4 | °C/W |
| Thermal Resistance, Junction to Ambient (RθJA) | 40 | °C/W |
| Gate-Emitter Threshold Voltage (VGE(th)) | 3.5 - 7.5 | V |
| Collector to Emitter Saturation Voltage (VCE(sat)) at IC = 25 A, VGE = 15 V | 2.0 | V |
| Turn-On Switching Loss (Eon) at IC = 25 A, VGE = 15 V | 4.1 mJ | mJ |
| Turn-Off Switching Loss (Eoff) at IC = 25 A, VGE = 15 V | 0.96 mJ | mJ |
Key Features
- NPT Trench Technology with Positive Temperature Coefficient
- Low Saturation Voltage: VCE(sat) = 2.0 V @ IC = 25 A and TC = 25°C
- Low Switching Loss: ECE off = 0.96 mJ @ IC = 25 A and TC = 25°C
- Extremely Enhanced Avalanche Capability
- Pb-Free, Halide-Free, and RoHS Compliant
Applications
- Induction Heating
- Microwave Oven
- Resonant or Soft Switching Applications
Q & A
- What is the maximum collector-emitter voltage of the FGA25N120ANTDTU-F109 IGBT?
The maximum collector-emitter voltage (VCES) is 1200 V.
- What is the typical collector to emitter saturation voltage at 25 A and 25°C?
The typical collector to emitter saturation voltage (VCE(sat)) is 2.0 V at IC = 25 A and VGE = 15 V.
- What are the operating temperature ranges for this IGBT?
The operating temperature range is -55 to +150°C.
- Is the FGA25N120ANTDTU-F109 RoHS compliant?
- What are some typical applications for this IGBT?
Typical applications include induction heating, microwave ovens, and other resonant or soft switching applications.
- What is the maximum power dissipation at 25°C?
The maximum power dissipation at TC = 25°C is 312 W.
- What is the thermal resistance from junction to case (RθJC)?
The thermal resistance from junction to case (RθJC) is 0.4 °C/W.
- What is the turn-on switching loss at IC = 25 A and VGE = 15 V?
The turn-on switching loss (Eon) is 4.1 mJ at IC = 25 A and VGE = 15 V.
- What is the turn-off switching loss at IC = 25 A and VGE = 15 V?
The turn-off switching loss (Eoff) is 0.96 mJ at IC = 25 A and VGE = 15 V.
- What is the gate-emitter threshold voltage range?
The gate-emitter threshold voltage (VGE(th)) range is 3.5 to 7.5 V.
