Overview
The STGW80H65DFB is a high-performance Insulated Gate Bipolar Transistor (IGBT) developed by STMicroelectronics. This device is part of the new HB series of IGBTs, which are designed to optimize the balance between conduction and switching losses, thereby maximizing the efficiency of high-frequency converters. The STGW80H65DFB utilizes an advanced proprietary trench gate field-stop structure, enabling high-speed switching and minimized tail current. The device features a Kelvin pin that separates the power path from the driving signal, enhancing switching performance. The slightly positive VCE(sat) temperature coefficient and tight parameter distribution ensure safer paralleling operations.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-emitter voltage (VCES) | 650 | V |
| Continuous collector current at TC = 25 °C | 120 (limited by bond wires) | A |
| Continuous collector current at TC = 100 °C | 80 | A |
| Pulsed collector current (tp ≤ 1 μs, TJ < 175 °C) | 300 | A |
| Gate-emitter voltage (VGE) | ±20 | V |
| Collector-emitter saturation voltage (VCE(sat)) at IC = 80 A, VGE = 15 V | 1.6 | V |
| Maximum junction temperature (TJ) | -55 to 175 | °C |
| Thermal resistance junction-case (RthJC) for IGBT | 0.32 | °C/W |
| Thermal resistance junction-ambient (RthJA) | 50 | °C/W |
Key Features
- Maximum junction temperature: TJ = 175 °C
- High speed switching series
- Minimized tail current
- Very low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 80 A
- Tight parameter distribution
- Safe paralleling
- Low thermal resistance
- Very fast soft recovery antiparallel diode
- Excellent switching performance thanks to the extra driving Kelvin pin
- Lead-free package
Applications
- Photovoltaic inverters
- High frequency converters
Q & A
- What is the maximum collector-emitter voltage of the STGW80H65DFB?
The maximum collector-emitter voltage (VCES) is 650 V.
- What is the continuous collector current at 25 °C and 100 °C?
The continuous collector current is 120 A at 25 °C and 80 A at 100 °C.
- What is the typical collector-emitter saturation voltage at IC = 80 A?
The typical collector-emitter saturation voltage (VCE(sat)) is 1.6 V at IC = 80 A and VGE = 15 V.
- What is the maximum junction temperature of the STGW80H65DFB?
The maximum junction temperature (TJ) is 175 °C.
- What are the key features of the STGW80H65DFB?
The key features include high-speed switching, minimized tail current, tight parameter distribution, safe paralleling, low thermal resistance, and a very fast soft recovery antiparallel diode.
- What are the typical applications of the STGW80H65DFB?
The typical applications include photovoltaic inverters and high-frequency converters.
- What is the thermal resistance junction-case (RthJC) for the IGBT?
The thermal resistance junction-case (RthJC) for the IGBT is 0.32 °C/W.
- Does the STGW80H65DFB have a Kelvin pin?
Yes, the STGW80H65DFB features a Kelvin pin that separates the power path from the driving signal, enhancing switching performance.
- Is the package of the STGW80H65DFB lead-free?
Yes, the package of the STGW80H65DFB is lead-free.
- What is the total power dissipation at TC = 25 °C?
The total power dissipation at TC = 25 °C is 470 W.
