IKW40N120H3FKSA1
  • Share:

Infineon Technologies IKW40N120H3FKSA1

Manufacturer No:
IKW40N120H3FKSA1
Manufacturer:
Infineon Technologies
Package:
Tube
Description:
IGBT 1200V 80A 483W TO247-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The IKW40N120H3FKSA1 is a high-performance IGBT (Insulated Gate Bipolar Transistor) module produced by Infineon Technologies. This component is part of the TRENCHSTOP™ IGBT4 family and is packaged in a TO-247 package. It is designed to offer a balance between switching and conduction losses, making it suitable for various high-power applications. The module includes an IGBT with an anti-parallel diode, enhancing its efficiency and reliability in different operational scenarios.

Key Specifications

ParameterValue
Voltage Rating (VCE)1200 V
Current Rating (IC)40 A
Package TypeTO-247
Maximum Junction Temperature (Tj(max))175°C
Switching FrequencyBelow 70 kHz
Gate Resistor SelectionDown to 5Ω
Short Circuit CapabilityYes

Key Features

  • High speed hard-switching TRENCHSTOP™ IGBT4 technology with low switching losses.
  • MOSFET-like turn-off switching behavior for reduced turn-off losses.
  • Excellent VCEsat behavior due to TRENCHSTOP™ technology.
  • Fast switching behavior with low EMI emissions.
  • Optimized diode for target applications, further reducing switching losses.
  • Low gate resistor selection possible (down to 5Ω) while maintaining excellent switching behavior.
  • Short circuit capability.
  • Packaged with and without freewheeling diode for increased design flexibility.

Applications

  • Solar power systems.
  • Welding equipment.
  • Uninterruptible power supplies (UPS).
  • Other high-power applications requiring efficient and reliable switching.

Q & A

  1. What is the voltage rating of the IKW40N120H3FKSA1 IGBT? The voltage rating is 1200 V.
  2. What is the current rating of the IKW40N120H3FKSA1 IGBT? The current rating is 40 A.
  3. In what package is the IKW40N120H3FKSA1 IGBT available? It is available in a TO-247 package.
  4. What is the maximum junction temperature for the IKW40N120H3FKSA1 IGBT? The maximum junction temperature is 175°C.
  5. What is the typical switching frequency range for the IKW40N120H3FKSA1 IGBT? It is designed for switching frequencies below 70 kHz.
  6. Can the IKW40N120H3FKSA1 IGBT be used with a small gate resistor? Yes, it can be used with a gate resistor as low as 5Ω.
  7. Does the IKW40N120H3FKSA1 IGBT have short circuit capability? Yes, it does have short circuit capability.
  8. What technology is used in the IKW40N120H3FKSA1 IGBT? It uses TRENCHSTOP™ IGBT4 technology.
  9. What are the benefits of using the IKW40N120H3FKSA1 IGBT? Benefits include low switching and conduction losses, very good EMI behavior, and high current density.
  10. Is the IKW40N120H3FKSA1 IGBT packaged with a freewheeling diode? Yes, it is available both with and without a freewheeling diode.

Product Attributes

IGBT Type:Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):1200 V
Current - Collector (Ic) (Max):80 A
Current - Collector Pulsed (Icm):160 A
Vce(on) (Max) @ Vge, Ic:2.4V @ 15V, 40A
Power - Max:483 W
Switching Energy:4.4mJ
Input Type:Standard
Gate Charge:185 nC
Td (on/off) @ 25°C:30ns/290ns
Test Condition:600V, 40A, 12Ohm, 15V
Reverse Recovery Time (trr):355 ns
Operating Temperature:-40°C ~ 175°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-247-3
Supplier Device Package:PG-TO247-3-1
0 Remaining View Similar

In Stock

$8.91
15

Please send RFQ , we will respond immediately.

Related Product By Categories

FGB3245G2-F085
FGB3245G2-F085
onsemi
ECOSPARK2 450V IGNITION IGBT
HGTD1N120BNS9A
HGTD1N120BNS9A
onsemi
IGBT 1200V 5.3A 60W TO252AA
FGH60T65SQD-F155
FGH60T65SQD-F155
onsemi
IGBT TRENCH/FS 650V 120A TO247-3
STGD4M65DF2
STGD4M65DF2
STMicroelectronics
TRENCH GATE FIELD-STOP IGBT, M S
FGD3040G2-F085
FGD3040G2-F085
onsemi
IGBT 400V 41A TO252AA
STGW30NC60WD
STGW30NC60WD
STMicroelectronics
IGBT 600V 60A 200W TO247
FGH50T65SQD-F155
FGH50T65SQD-F155
onsemi
IGBT TRENCH/FS 650V 100A TO247-3
TIG065E8-TL-H
TIG065E8-TL-H
onsemi
IGBT 400V 150A ECH8
FGAF20S65AQ
FGAF20S65AQ
onsemi
IGBT 650V 20A TO-3PF
FGH40N60SMDF-F085
FGH40N60SMDF-F085
Fairchild Semiconductor
INSULATED GATE BIPOLAR TRANSISTO
IKW75N60TXK
IKW75N60TXK
Infineon Technologies
IKW75N60 - DISCRETE IGBT WITH AN
STGWT20H65FB
STGWT20H65FB
STMicroelectronics
IGBT 650V 40A 168W TO3P

Related Product By Brand

BAS7006B5003
BAS7006B5003
Infineon Technologies
SCHOTTKY DIODE
BAW 56 E6433
BAW 56 E6433
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT23
BAV 70 B5003
BAV 70 B5003
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT23
BAV 99 B5003
BAV 99 B5003
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT23
BCP53-10E6327
BCP53-10E6327
Infineon Technologies
SMALL SIGNAL BIPOLAR TRANSISTOR
MMBTA56LT1HTSA1
MMBTA56LT1HTSA1
Infineon Technologies
TRANS PNP 80V 0.5A SOT23
BC857CWE6433HTMA1
BC857CWE6433HTMA1
Infineon Technologies
TRANS PNP 45V 0.1A SOT323
BCP 69US E6327
BCP 69US E6327
Infineon Technologies
TRANS PNP 20V 1A TSOP6-6
IRFP4468PBF
IRFP4468PBF
Infineon Technologies
MOSFET N-CH 100V 195A TO247AC
BTS6143DAUMA1
BTS6143DAUMA1
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 TO252-5
TDA21470AUMA1
TDA21470AUMA1
Infineon Technologies
INT. POWERSTAGE/DRIVER
FM28V100-TG
FM28V100-TG
Infineon Technologies
IC FRAM 1MBIT PARALLEL 32TSOP I