IKW40N120H3FKSA1
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Infineon Technologies IKW40N120H3FKSA1

Manufacturer No:
IKW40N120H3FKSA1
Manufacturer:
Infineon Technologies
Package:
Tube
Description:
IGBT 1200V 80A 483W TO247-3
Delivery:
Payment:
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Product Introduction

Overview

The IKW40N120H3FKSA1 is a high-performance IGBT (Insulated Gate Bipolar Transistor) module produced by Infineon Technologies. This component is part of the TRENCHSTOP™ IGBT4 family and is packaged in a TO-247 package. It is designed to offer a balance between switching and conduction losses, making it suitable for various high-power applications. The module includes an IGBT with an anti-parallel diode, enhancing its efficiency and reliability in different operational scenarios.

Key Specifications

ParameterValue
Voltage Rating (VCE)1200 V
Current Rating (IC)40 A
Package TypeTO-247
Maximum Junction Temperature (Tj(max))175°C
Switching FrequencyBelow 70 kHz
Gate Resistor SelectionDown to 5Ω
Short Circuit CapabilityYes

Key Features

  • High speed hard-switching TRENCHSTOP™ IGBT4 technology with low switching losses.
  • MOSFET-like turn-off switching behavior for reduced turn-off losses.
  • Excellent VCEsat behavior due to TRENCHSTOP™ technology.
  • Fast switching behavior with low EMI emissions.
  • Optimized diode for target applications, further reducing switching losses.
  • Low gate resistor selection possible (down to 5Ω) while maintaining excellent switching behavior.
  • Short circuit capability.
  • Packaged with and without freewheeling diode for increased design flexibility.

Applications

  • Solar power systems.
  • Welding equipment.
  • Uninterruptible power supplies (UPS).
  • Other high-power applications requiring efficient and reliable switching.

Q & A

  1. What is the voltage rating of the IKW40N120H3FKSA1 IGBT? The voltage rating is 1200 V.
  2. What is the current rating of the IKW40N120H3FKSA1 IGBT? The current rating is 40 A.
  3. In what package is the IKW40N120H3FKSA1 IGBT available? It is available in a TO-247 package.
  4. What is the maximum junction temperature for the IKW40N120H3FKSA1 IGBT? The maximum junction temperature is 175°C.
  5. What is the typical switching frequency range for the IKW40N120H3FKSA1 IGBT? It is designed for switching frequencies below 70 kHz.
  6. Can the IKW40N120H3FKSA1 IGBT be used with a small gate resistor? Yes, it can be used with a gate resistor as low as 5Ω.
  7. Does the IKW40N120H3FKSA1 IGBT have short circuit capability? Yes, it does have short circuit capability.
  8. What technology is used in the IKW40N120H3FKSA1 IGBT? It uses TRENCHSTOP™ IGBT4 technology.
  9. What are the benefits of using the IKW40N120H3FKSA1 IGBT? Benefits include low switching and conduction losses, very good EMI behavior, and high current density.
  10. Is the IKW40N120H3FKSA1 IGBT packaged with a freewheeling diode? Yes, it is available both with and without a freewheeling diode.

Product Attributes

IGBT Type:Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):1200 V
Current - Collector (Ic) (Max):80 A
Current - Collector Pulsed (Icm):160 A
Vce(on) (Max) @ Vge, Ic:2.4V @ 15V, 40A
Power - Max:483 W
Switching Energy:4.4mJ
Input Type:Standard
Gate Charge:185 nC
Td (on/off) @ 25°C:30ns/290ns
Test Condition:600V, 40A, 12Ohm, 15V
Reverse Recovery Time (trr):355 ns
Operating Temperature:-40°C ~ 175°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-247-3
Supplier Device Package:PG-TO247-3-1
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$8.91
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