STGYA120M65DF2
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STMicroelectronics STGYA120M65DF2

Manufacturer No:
STGYA120M65DF2
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
TRENCH GATE FIELD-STOP IGBT, M S
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STGYA120M65DF2 is an Insulated Gate Bipolar Transistor (IGBT) developed by STMicroelectronics using an advanced proprietary trench gate field-stop structure. This device is part of the M series IGBTs, which offer an optimal balance between inverter system performance and efficiency. The STGYA120M65DF2 is particularly suited for applications where low-loss and short-circuit functionality are essential. The positive VCE(sat) temperature coefficient and tight parameter distribution ensure safer paralleling operations.

Key Specifications

Parameter Value Unit
Collector-emitter voltage (VGES = 0 V) 650 V
Continuous collector current at TC = 25 °C 160 A
Continuous collector current at TC = 100 °C 120 A
Pulsed collector current 360 A
Gate-emitter voltage ±20 V
Total power dissipation at TC = 25 °C 625 W
Storage temperature range -55 to 150 °C
Operating junction temperature range -55 to 175 °C
Thermal resistance, junction-to-case IGBT 0.24 °C/W
Thermal resistance, junction-to-case diode 0.6 °C/W
Thermal resistance, junction-to-ambient 50 °C/W
Collector-emitter saturation voltage (VCE(sat)) 1.65 (typ.) @ IC = 120 A V
Forward on-voltage (VF) 1.9 (typ.) @ IF = 120 A V

Key Features

  • Maximum junction temperature: TJ = 175 °C
  • 6 μs of minimum short-circuit withstand time
  • VCE(sat) = 1.65 V (typ.) @ IC = 120 A
  • Tight parameter distribution for safer paralleling
  • Positive VCE(sat) temperature coefficient
  • Low thermal resistance
  • Soft- and fast-recovery antiparallel diode

Applications

  • Motor control
  • Uninterruptible Power Supplies (UPS)
  • Power Factor Correction (PFC)
  • General purpose inverter systems

Q & A

  1. What is the maximum collector-emitter voltage of the STGYA120M65DF2?

    The maximum collector-emitter voltage (VCES) is 650 V.

  2. What is the continuous collector current at 25 °C and 100 °C?

    The continuous collector current is 160 A at TC = 25 °C and 120 A at TC = 100 °C.

  3. What is the short-circuit withstand time of the STGYA120M65DF2?

    The device can withstand a short circuit for a minimum of 6 μs.

  4. What is the typical collector-emitter saturation voltage (VCE(sat)) at IC = 120 A?

    The typical VCE(sat) is 1.65 V at IC = 120 A.

  5. What are the key features that make paralleling safer in the STGYA120M65DF2?

    The positive VCE(sat) temperature coefficient and tight parameter distribution make paralleling safer.

  6. What is the thermal resistance junction-to-case for the IGBT and diode?

    The thermal resistance junction-to-case for the IGBT is 0.24 °C/W and for the diode is 0.6 °C/W.

  7. What are the typical applications of the STGYA120M65DF2?

    The typical applications include motor control, UPS, PFC, and general purpose inverter systems.

  8. What is the maximum junction temperature of the STGYA120M65DF2?

    The maximum junction temperature (TJ) is 175 °C.

  9. What type of antiparallel diode does the STGYA120M65DF2 have?

    The device features a soft- and fast-recovery antiparallel diode.

  10. What is the total power dissipation at TC = 25 °C?

    The total power dissipation (PTOT) is 625 W at TC = 25 °C.

  11. What is the storage temperature range for the STGYA120M65DF2?

    The storage temperature range is -55 to 150 °C.

Product Attributes

IGBT Type:NPT, Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):650 V
Current - Collector (Ic) (Max):160 A
Current - Collector Pulsed (Icm):360 A
Vce(on) (Max) @ Vge, Ic:1.95V @ 15V, 120A
Power - Max:625 W
Switching Energy:1.8mJ (on), 4.41mJ (off)
Input Type:Standard
Gate Charge:420 nC
Td (on/off) @ 25°C:66ns/185ns
Test Condition:400V, 120A, 4.7Ohm, 15V
Reverse Recovery Time (trr):202 ns
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-247-3 Exposed Pad
Supplier Device Package:MAX247™
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