STGYA120M65DF2
  • Share:

STMicroelectronics STGYA120M65DF2

Manufacturer No:
STGYA120M65DF2
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
TRENCH GATE FIELD-STOP IGBT, M S
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STGYA120M65DF2 is an Insulated Gate Bipolar Transistor (IGBT) developed by STMicroelectronics using an advanced proprietary trench gate field-stop structure. This device is part of the M series IGBTs, which offer an optimal balance between inverter system performance and efficiency. The STGYA120M65DF2 is particularly suited for applications where low-loss and short-circuit functionality are essential. The positive VCE(sat) temperature coefficient and tight parameter distribution ensure safer paralleling operations.

Key Specifications

Parameter Value Unit
Collector-emitter voltage (VGES = 0 V) 650 V
Continuous collector current at TC = 25 °C 160 A
Continuous collector current at TC = 100 °C 120 A
Pulsed collector current 360 A
Gate-emitter voltage ±20 V
Total power dissipation at TC = 25 °C 625 W
Storage temperature range -55 to 150 °C
Operating junction temperature range -55 to 175 °C
Thermal resistance, junction-to-case IGBT 0.24 °C/W
Thermal resistance, junction-to-case diode 0.6 °C/W
Thermal resistance, junction-to-ambient 50 °C/W
Collector-emitter saturation voltage (VCE(sat)) 1.65 (typ.) @ IC = 120 A V
Forward on-voltage (VF) 1.9 (typ.) @ IF = 120 A V

Key Features

  • Maximum junction temperature: TJ = 175 °C
  • 6 μs of minimum short-circuit withstand time
  • VCE(sat) = 1.65 V (typ.) @ IC = 120 A
  • Tight parameter distribution for safer paralleling
  • Positive VCE(sat) temperature coefficient
  • Low thermal resistance
  • Soft- and fast-recovery antiparallel diode

Applications

  • Motor control
  • Uninterruptible Power Supplies (UPS)
  • Power Factor Correction (PFC)
  • General purpose inverter systems

Q & A

  1. What is the maximum collector-emitter voltage of the STGYA120M65DF2?

    The maximum collector-emitter voltage (VCES) is 650 V.

  2. What is the continuous collector current at 25 °C and 100 °C?

    The continuous collector current is 160 A at TC = 25 °C and 120 A at TC = 100 °C.

  3. What is the short-circuit withstand time of the STGYA120M65DF2?

    The device can withstand a short circuit for a minimum of 6 μs.

  4. What is the typical collector-emitter saturation voltage (VCE(sat)) at IC = 120 A?

    The typical VCE(sat) is 1.65 V at IC = 120 A.

  5. What are the key features that make paralleling safer in the STGYA120M65DF2?

    The positive VCE(sat) temperature coefficient and tight parameter distribution make paralleling safer.

  6. What is the thermal resistance junction-to-case for the IGBT and diode?

    The thermal resistance junction-to-case for the IGBT is 0.24 °C/W and for the diode is 0.6 °C/W.

  7. What are the typical applications of the STGYA120M65DF2?

    The typical applications include motor control, UPS, PFC, and general purpose inverter systems.

  8. What is the maximum junction temperature of the STGYA120M65DF2?

    The maximum junction temperature (TJ) is 175 °C.

  9. What type of antiparallel diode does the STGYA120M65DF2 have?

    The device features a soft- and fast-recovery antiparallel diode.

  10. What is the total power dissipation at TC = 25 °C?

    The total power dissipation (PTOT) is 625 W at TC = 25 °C.

  11. What is the storage temperature range for the STGYA120M65DF2?

    The storage temperature range is -55 to 150 °C.

Product Attributes

IGBT Type:NPT, Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):650 V
Current - Collector (Ic) (Max):160 A
Current - Collector Pulsed (Icm):360 A
Vce(on) (Max) @ Vge, Ic:1.95V @ 15V, 120A
Power - Max:625 W
Switching Energy:1.8mJ (on), 4.41mJ (off)
Input Type:Standard
Gate Charge:420 nC
Td (on/off) @ 25°C:66ns/185ns
Test Condition:400V, 120A, 4.7Ohm, 15V
Reverse Recovery Time (trr):202 ns
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-247-3 Exposed Pad
Supplier Device Package:MAX247™
0 Remaining View Similar

In Stock

$15.47
13

Please send RFQ , we will respond immediately.

Related Product By Categories

FGH40T65SHD-F155
FGH40T65SHD-F155
Fairchild Semiconductor
IGBT, 80A, 650V, N-CHANNEL, TO-2
STGW20V60DF
STGW20V60DF
STMicroelectronics
IGBT 600V 40A 167W TO247
STGW40H65DFB-4
STGW40H65DFB-4
STMicroelectronics
IGBT
STGF7NB60SL
STGF7NB60SL
STMicroelectronics
IGBT 600V 15A 25W TO220FP
STGWT30H60DFB
STGWT30H60DFB
STMicroelectronics
IGBT 600V 60A 260W TO3PL
STGW30NC60VD
STGW30NC60VD
STMicroelectronics
IGBT 600V 80A 250W TO247
FGH40T120SMD-F155
FGH40T120SMD-F155
onsemi
IGBT 1200V 80A 555W TO247-3
STGW25M120DF3
STGW25M120DF3
STMicroelectronics
IGBT 1200V 50A 375W
STGB10M65DF2
STGB10M65DF2
STMicroelectronics
IGBT 650V 10A D2PAK
FGY75T95SQDT
FGY75T95SQDT
onsemi
IGBT 950V 75A
NGD15N41CLT4G
NGD15N41CLT4G
Littelfuse Inc.
IGBT 440V 15A 107W DPAK
FGH40T65SQD-F155
FGH40T65SQD-F155
onsemi
IGBT TRENCH/FS 650V 80A TO247-3

Related Product By Brand

NUCLEO-F303RE
NUCLEO-F303RE
STMicroelectronics
NUCLEO-64 STM32F303RE EVAL BRD
STPS40M80CT
STPS40M80CT
STMicroelectronics
DIODE ARRAY SCHOTTKY 80V TO220AB
STPS1045D
STPS1045D
STMicroelectronics
DIODE SCHOTTKY 45V 10A TO220AC
T405Q-600H
T405Q-600H
STMicroelectronics
TRIAC SENS GATE 600V 4A IPAK
STM32L475VGT6
STM32L475VGT6
STMicroelectronics
IC MCU 32BIT 1MB FLASH 100LQFP
STM32F103VFT7
STM32F103VFT7
STMicroelectronics
IC MCU 32BIT 768KB FLASH 100LQFP
STM32F215ZET6TR
STM32F215ZET6TR
STMicroelectronics
IC MCU 32BIT 512KB FLASH 144LQFP
STM32F401CCY6TR
STM32F401CCY6TR
STMicroelectronics
IC MCU 32BIT 256KB FLASH 49WLCSP
STM32L476VGT6U
STM32L476VGT6U
STMicroelectronics
IC MCU 32BIT 1MB FLASH 100LQFP
M95512-WMN6P
M95512-WMN6P
STMicroelectronics
IC EEPROM 512KBIT SPI 16MHZ 8SO
VN5770AKP-E
VN5770AKP-E
STMicroelectronics
IC MOTOR DRIVER PAR 28SO
L78M15CDT-TR
L78M15CDT-TR
STMicroelectronics
IC REG LINEAR 15V 500MA DPAK