Overview
The STGYA120M65DF2 is an Insulated Gate Bipolar Transistor (IGBT) developed by STMicroelectronics using an advanced proprietary trench gate field-stop structure. This device is part of the M series IGBTs, which offer an optimal balance between inverter system performance and efficiency. The STGYA120M65DF2 is particularly suited for applications where low-loss and short-circuit functionality are essential. The positive VCE(sat) temperature coefficient and tight parameter distribution ensure safer paralleling operations.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-emitter voltage (VGES = 0 V) | 650 | V |
| Continuous collector current at TC = 25 °C | 160 | A |
| Continuous collector current at TC = 100 °C | 120 | A |
| Pulsed collector current | 360 | A |
| Gate-emitter voltage | ±20 | V |
| Total power dissipation at TC = 25 °C | 625 | W |
| Storage temperature range | -55 to 150 | °C |
| Operating junction temperature range | -55 to 175 | °C |
| Thermal resistance, junction-to-case IGBT | 0.24 | °C/W |
| Thermal resistance, junction-to-case diode | 0.6 | °C/W |
| Thermal resistance, junction-to-ambient | 50 | °C/W |
| Collector-emitter saturation voltage (VCE(sat)) | 1.65 (typ.) @ IC = 120 A | V |
| Forward on-voltage (VF) | 1.9 (typ.) @ IF = 120 A | V |
Key Features
- Maximum junction temperature: TJ = 175 °C
- 6 μs of minimum short-circuit withstand time
- VCE(sat) = 1.65 V (typ.) @ IC = 120 A
- Tight parameter distribution for safer paralleling
- Positive VCE(sat) temperature coefficient
- Low thermal resistance
- Soft- and fast-recovery antiparallel diode
Applications
- Motor control
- Uninterruptible Power Supplies (UPS)
- Power Factor Correction (PFC)
- General purpose inverter systems
Q & A
- What is the maximum collector-emitter voltage of the STGYA120M65DF2?
The maximum collector-emitter voltage (VCES) is 650 V.
- What is the continuous collector current at 25 °C and 100 °C?
The continuous collector current is 160 A at TC = 25 °C and 120 A at TC = 100 °C.
- What is the short-circuit withstand time of the STGYA120M65DF2?
The device can withstand a short circuit for a minimum of 6 μs.
- What is the typical collector-emitter saturation voltage (VCE(sat)) at IC = 120 A?
The typical VCE(sat) is 1.65 V at IC = 120 A.
- What are the key features that make paralleling safer in the STGYA120M65DF2?
The positive VCE(sat) temperature coefficient and tight parameter distribution make paralleling safer.
- What is the thermal resistance junction-to-case for the IGBT and diode?
The thermal resistance junction-to-case for the IGBT is 0.24 °C/W and for the diode is 0.6 °C/W.
- What are the typical applications of the STGYA120M65DF2?
The typical applications include motor control, UPS, PFC, and general purpose inverter systems.
- What is the maximum junction temperature of the STGYA120M65DF2?
The maximum junction temperature (TJ) is 175 °C.
- What type of antiparallel diode does the STGYA120M65DF2 have?
The device features a soft- and fast-recovery antiparallel diode.
- What is the total power dissipation at TC = 25 °C?
The total power dissipation (PTOT) is 625 W at TC = 25 °C.
- What is the storage temperature range for the STGYA120M65DF2?
The storage temperature range is -55 to 150 °C.
