Overview
The SCTWA90N65G2V is a silicon carbide (SiC) Power MOSFET developed by STMicroelectronics using their advanced and innovative 2nd generation SiC MOSFET technology. This device is designed to offer remarkably low on-resistance per unit area and excellent switching performance. The SCTWA90N65G2V features a high operating junction temperature capability of up to 200 °C and very fast and robust intrinsic body diode characteristics. It is packaged in a HiP247 long leads package, making it suitable for various high-power applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-source voltage (VDS) | 650 | V |
| Gate-source voltage (VGS) | -10 to 22 | V |
| Recommended gate-source voltage (VGS) | -5 to 18 | V |
| Continuous drain current (ID) at TC = 25 °C | 119 | A |
| Continuous drain current (ID) at TC = 100 °C | 90 | A |
| Pulsed drain current (IDM) | 220 | A |
| Total power dissipation (PTOT) at TC = 25 °C | 565 | W |
| Storage temperature range (Tstg) | -55 to 200 | °C |
| Operating junction temperature range (Tj) | - | °C |
| Thermal resistance, junction-to-case (RthJC) | 0.31 | °C/W |
| Thermal resistance, junction-to-ambient (RthJA) | 40 | °C/W |
| Static drain-source on-resistance (RDS(on)) at VGS = 18 V, ID = 50 A | 18 - 24 | mΩ |
| Input capacitance (Ciss) at VDS = 400 V, f = 1 MHz | 3380 | pF |
| Output capacitance (Coss) | 294 | pF |
| Reverse transfer capacitance (Crss) | 49 | pF |
| Total gate charge (Qg) at VDD = 400 V, ID = 50 A, VGS = -5 V to 18 V | 157 | nC |
Key Features
- Very high operating junction temperature capability up to 200 °C
- Very fast and robust intrinsic body diode
- Extremely low gate charge and input capacitances
- Remarkably low on-resistance per unit area
- Excellent switching performance with switching loss almost independent of junction temperature
Applications
- Power supply for renewable energy systems
- High frequency DC-DC converters
- Charging stations
- Switching mode power supply
- Industrial motor control
Q & A
- What is the maximum drain-source voltage (VDS) of the SCTWA90N65G2V?
The maximum drain-source voltage (VDS) is 650 V.
- What is the recommended gate-source voltage range for the SCTWA90N65G2V?
The recommended gate-source voltage range is -5 to 18 V.
- What is the continuous drain current (ID) at TC = 25 °C for the SCTWA90N65G2V?
The continuous drain current (ID) at TC = 25 °C is 119 A.
- What is the thermal resistance, junction-to-case (RthJC) for the SCTWA90N65G2V?
The thermal resistance, junction-to-case (RthJC) is 0.31 °C/W.
- What are the key features of the SCTWA90N65G2V?
The key features include very high operating junction temperature capability, very fast and robust intrinsic body diode, extremely low gate charge and input capacitances, and remarkably low on-resistance per unit area.
- What are some typical applications of the SCTWA90N65G2V?
Typical applications include power supply for renewable energy systems, high frequency DC-DC converters, charging stations, switching mode power supply, and industrial motor control.
- What is the package type for the SCTWA90N65G2V?
The device is packaged in a HiP247 long leads package.
- What is the total gate charge (Qg) for the SCTWA90N65G2V?
The total gate charge (Qg) at VDD = 400 V, ID = 50 A, VGS = -5 V to 18 V is 157 nC.
- How does the switching performance of the SCTWA90N65G2V vary with junction temperature?
The variation of switching loss is almost independent of junction temperature.
- What is the maximum storage temperature range for the SCTWA90N65G2V?
The storage temperature range is -55 to 200 °C.
