STD7ANM60N
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STMicroelectronics STD7ANM60N

Manufacturer No:
STD7ANM60N
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 600V 5A DPAK
Delivery:
Payment:
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Product Introduction

Overview

The STD7ANM60N is an N-channel Power MOSFET developed by STMicroelectronics using their second-generation MDmesh technology. This device is part of the STripFET F8 family, which features an enhanced trench gate structure. It is designed to offer high performance and reliability in various power management applications.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)800 V
VGS (Gate-Source Voltage)±20 V
ID (Continuous Drain Current)7 A
RDS(on) (On-State Resistance)Typically 1.1 Ω
Ciss (Input Capacitance)Typically 220 pF
Coss (Output Capacitance)Typically 120 pF
Crss (Reverse Transfer Capacitance)Typically 20 pF
TJ (Junction Temperature)-55°C to 150°C

Key Features

  • Utilizes ST's STripFET F8 technology with an enhanced trench gate structure.
  • Low input capacitance and gate charge.
  • Zener-protected and 100% avalanche tested.
  • High voltage rating of 800 V.
  • Ideal for high-frequency applications due to low switching losses.

Applications

The STD7ANM60N is particularly suited for various power management applications, including:

  • Flyback converters.
  • LED lighting systems.
  • Switch-mode power supplies.
  • High-voltage DC-DC converters.

Q & A

  1. What is the maximum drain-source voltage of the STD7ANM60N?
    The maximum drain-source voltage (VDS) is 800 V.
  2. What is the typical on-state resistance of the STD7ANM60N?
    The typical on-state resistance (RDS(on)) is 1.1 Ω.
  3. What technology does the STD7ANM60N use?
    The STD7ANM60N uses ST's STripFET F8 technology with an enhanced trench gate structure.
  4. Is the STD7ANM60N Zener-protected and avalanche tested?
    Yes, the STD7ANM60N is Zener-protected and 100% avalanche tested.
  5. What are some common applications for the STD7ANM60N?
    Common applications include flyback converters, LED lighting systems, switch-mode power supplies, and high-voltage DC-DC converters.
  6. What is the continuous drain current rating of the STD7ANM60N?
    The continuous drain current (ID) rating is 7 A.
  7. What is the junction temperature range for the STD7ANM60N?
    The junction temperature (TJ) range is -55°C to 150°C.
  8. Why is the STD7ANM60N suitable for high-frequency applications?
    The STD7ANM60N is suitable for high-frequency applications due to its low input capacitance and gate charge, resulting in low switching losses.
  9. Where can I find detailed specifications for the STD7ANM60N?
    Detailed specifications can be found on the official STMicroelectronics website, as well as on distributor websites such as Digi-Key and Mouser Electronics.
  10. What are the benefits of using the MDmesh technology in the STD7ANM60N?
    The MDmesh technology provides improved performance, lower on-state resistance, and enhanced reliability.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:900mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:14 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:363 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):45W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Same Series
STB7ANM60N
STB7ANM60N
MOSFET N-CH 600V 5A D2PAK

Similar Products

Part Number STD7ANM60N STD7NM60N
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 5A (Tc) 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 900mOhm @ 2.5A, 10V 900mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 14 nC @ 10 V 14 nC @ 10 V
Vgs (Max) ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 363 pF @ 50 V 363 pF @ 50 V
FET Feature - -
Power Dissipation (Max) 45W (Tc) 45W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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