STW45N60DM2AG
  • Share:

STMicroelectronics STW45N60DM2AG

Manufacturer No:
STW45N60DM2AG
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 34A TO247
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STW45N60DM2AG is a high-voltage N-channel Power MOSFET produced by STMicroelectronics. It is part of the MDmesh™ DM2 fast recovery diode series, designed to offer very low recovery charge and time (Qrr, trr). This MOSFET is AEC-Q101 qualified, making it suitable for automotive applications. It features a robust design with high voltage and current handling capabilities, making it an ideal choice for various power management and control systems.

Key Specifications

ParameterValue
Voltage Rating (Vds)600 V
Current Rating (Id)21 A
On-State Resistance (Rds(on))0.093 Ω (typ.)
Power Dissipation (Pd)250 W
Package TypeTO247
AEC-Q101 QualificationYes

Key Features

  • Fast-recovery body diode, reducing switching losses and improving overall efficiency.
  • Extremely low gate charge, enhancing switching speed and performance.
  • High voltage and current handling capabilities, suitable for demanding applications.
  • AEC-Q101 qualified, ensuring reliability and robustness for automotive use.
  • Low recovery charge and time (Qrr, trr), contributing to reduced power losses during switching.

Applications

The STW45N60DM2AG is primarily designed for automotive applications due to its AEC-Q101 qualification. It is suitable for use in various power management and control systems, including but not limited to:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • High-power switching applications.
  • Electric vehicle systems.

Q & A

  1. What is the voltage rating of the STW45N60DM2AG MOSFET?
    The voltage rating of the STW45N60DM2AG MOSFET is 600 V.
  2. What is the current rating of the STW45N60DM2AG MOSFET?
    The current rating of the STW45N60DM2AG MOSFET is 21 A.
  3. What is the on-state resistance (Rds(on)) of the STW45N60DM2AG MOSFET?
    The on-state resistance (Rds(on)) of the STW45N60DM2AG MOSFET is 0.093 Ω (typ.).
  4. Is the STW45N60DM2AG MOSFET AEC-Q101 qualified?
    Yes, the STW45N60DM2AG MOSFET is AEC-Q101 qualified.
  5. What is the package type of the STW45N60DM2AG MOSFET?
    The package type of the STW45N60DM2AG MOSFET is TO247.
  6. What are the key features of the STW45N60DM2AG MOSFET?
    The key features include fast-recovery body diode, extremely low gate charge, high voltage and current handling, and low recovery charge and time.
  7. What are the typical applications of the STW45N60DM2AG MOSFET?
    The typical applications include automotive systems, power supplies, motor control, high-power switching, and electric vehicle systems.
  8. Why is the STW45N60DM2AG MOSFET suitable for automotive applications?
    The STW45N60DM2AG MOSFET is suitable for automotive applications due to its AEC-Q101 qualification and robust design.
  9. How does the fast-recovery body diode benefit the performance of the STW45N60DM2AG MOSFET?
    The fast-recovery body diode reduces switching losses and improves overall efficiency.
  10. What is the significance of low recovery charge and time (Qrr, trr) in the STW45N60DM2AG MOSFET?
    The low recovery charge and time reduce power losses during switching, enhancing the overall performance and efficiency of the MOSFET.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:34A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:93mOhm @ 17A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:56 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:2500 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):250W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
0 Remaining View Similar

In Stock

$6.75
34

Please send RFQ , we will respond immediately.

Related Product By Categories

PSMN1R0-40YLDX
PSMN1R0-40YLDX
Nexperia USA Inc.
MOSFET N-CH 40V 280A LFPAK56
FQD19N10LTM
FQD19N10LTM
onsemi
MOSFET N-CH 100V 15.6A DPAK
FDBL86361-F085
FDBL86361-F085
onsemi
MOSFET N-CH 80V 300A 8HPSOF
STW20N95K5
STW20N95K5
STMicroelectronics
MOSFET N-CH 950V 17.5A TO247-3
BUK7Y2R0-40HX
BUK7Y2R0-40HX
Nexperia USA Inc.
MOSFET N-CH 40V 120A LFPAK56
NTMFS4C028NT1G
NTMFS4C028NT1G
onsemi
MOSFET N-CH 30V 16.4A/52A 5DFN
NX7002AKVL
NX7002AKVL
Nexperia USA Inc.
MOSFET N-CH 60V 190MA TO236AB
BSS138K-7
BSS138K-7
Diodes Incorporated
MOSFET N-CH 50V SOT23 T&R 3K
STH150N10F7-2
STH150N10F7-2
STMicroelectronics
MOSFET N-CH 100V 110A H2PAK-2
MTB30P06VT4G
MTB30P06VT4G
onsemi
MOSFET P-CH 60V 30A D2PAK
FDB075N15A_SN00284
FDB075N15A_SN00284
onsemi
MOSFET N-CH 150V 130A D2PAK
MCH3478-TL-W
MCH3478-TL-W
onsemi
MOSFET N-CH 30V 2A 3MCPH

Related Product By Brand

T405Q-600H
T405Q-600H
STMicroelectronics
TRIAC SENS GATE 600V 4A IPAK
STM32F103T6U6A
STM32F103T6U6A
STMicroelectronics
IC MCU 32BIT 32KB FLASH 36VFQFPN
STM32F427VGT6TR
STM32F427VGT6TR
STMicroelectronics
IC MCU 32BIT 1MB FLASH 100LQFP
STM8AF6286TCY
STM8AF6286TCY
STMicroelectronics
IC MCU 8BIT 64KB FLASH 32LQFP
STM8AF6223IPCX
STM8AF6223IPCX
STMicroelectronics
IC MCU 8BIT 4KB FLASH 20TSSOP
SPC58EC80E5EMC0X
SPC58EC80E5EMC0X
STMicroelectronics
IC MCU 32BIT 4MB FLASH 144ETQFP
TDA7491LP
TDA7491LP
STMicroelectronics
IC AMP CLSS D STER 5W POWERSSO36
HCF4069YUM013TR
HCF4069YUM013TR
STMicroelectronics
IC INVERTER 6CH 1 INP
VN750PSTR-E
VN750PSTR-E
STMicroelectronics
IC PWR DRIVER N-CHANNEL 1:1 8SO
LF25CDT-TRY
LF25CDT-TRY
STMicroelectronics
IC REG LINEAR 2.5V 500MA DPAK
LD39100PU33R
LD39100PU33R
STMicroelectronics
IC REG LINEAR 3.3V 1A 6DFN
PSD813F2A-90M
PSD813F2A-90M
STMicroelectronics
IC FLASH 1M PARALLEL 52PQFP