STW45N60DM2AG
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STMicroelectronics STW45N60DM2AG

Manufacturer No:
STW45N60DM2AG
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 34A TO247
Delivery:
Payment:
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iso45001
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Product Introduction

Overview

The STW45N60DM2AG is a high-voltage N-channel Power MOSFET produced by STMicroelectronics. It is part of the MDmesh™ DM2 fast recovery diode series, designed to offer very low recovery charge and time (Qrr, trr). This MOSFET is AEC-Q101 qualified, making it suitable for automotive applications. It features a robust design with high voltage and current handling capabilities, making it an ideal choice for various power management and control systems.

Key Specifications

ParameterValue
Voltage Rating (Vds)600 V
Current Rating (Id)21 A
On-State Resistance (Rds(on))0.093 Ω (typ.)
Power Dissipation (Pd)250 W
Package TypeTO247
AEC-Q101 QualificationYes

Key Features

  • Fast-recovery body diode, reducing switching losses and improving overall efficiency.
  • Extremely low gate charge, enhancing switching speed and performance.
  • High voltage and current handling capabilities, suitable for demanding applications.
  • AEC-Q101 qualified, ensuring reliability and robustness for automotive use.
  • Low recovery charge and time (Qrr, trr), contributing to reduced power losses during switching.

Applications

The STW45N60DM2AG is primarily designed for automotive applications due to its AEC-Q101 qualification. It is suitable for use in various power management and control systems, including but not limited to:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • High-power switching applications.
  • Electric vehicle systems.

Q & A

  1. What is the voltage rating of the STW45N60DM2AG MOSFET?
    The voltage rating of the STW45N60DM2AG MOSFET is 600 V.
  2. What is the current rating of the STW45N60DM2AG MOSFET?
    The current rating of the STW45N60DM2AG MOSFET is 21 A.
  3. What is the on-state resistance (Rds(on)) of the STW45N60DM2AG MOSFET?
    The on-state resistance (Rds(on)) of the STW45N60DM2AG MOSFET is 0.093 Ω (typ.).
  4. Is the STW45N60DM2AG MOSFET AEC-Q101 qualified?
    Yes, the STW45N60DM2AG MOSFET is AEC-Q101 qualified.
  5. What is the package type of the STW45N60DM2AG MOSFET?
    The package type of the STW45N60DM2AG MOSFET is TO247.
  6. What are the key features of the STW45N60DM2AG MOSFET?
    The key features include fast-recovery body diode, extremely low gate charge, high voltage and current handling, and low recovery charge and time.
  7. What are the typical applications of the STW45N60DM2AG MOSFET?
    The typical applications include automotive systems, power supplies, motor control, high-power switching, and electric vehicle systems.
  8. Why is the STW45N60DM2AG MOSFET suitable for automotive applications?
    The STW45N60DM2AG MOSFET is suitable for automotive applications due to its AEC-Q101 qualification and robust design.
  9. How does the fast-recovery body diode benefit the performance of the STW45N60DM2AG MOSFET?
    The fast-recovery body diode reduces switching losses and improves overall efficiency.
  10. What is the significance of low recovery charge and time (Qrr, trr) in the STW45N60DM2AG MOSFET?
    The low recovery charge and time reduce power losses during switching, enhancing the overall performance and efficiency of the MOSFET.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:34A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:93mOhm @ 17A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:56 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:2500 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):250W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
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