2N7002AQ-13
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Diodes Incorporated 2N7002AQ-13

Manufacturer No:
2N7002AQ-13
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 180MA SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N7002AQ-13 is an automotive-compliant N-Channel Enhancement Mode MOSFET produced by Diodes Incorporated. This component is designed to offer high efficiency and superior switching performance, making it ideal for various automotive and high-reliability applications. It is part of the 2N7002A family but is specifically qualified to meet the stringent requirements of the automotive industry, including compliance with AEC-Q100/101/200 standards and manufactured in IATF 16949 certified facilities.

Key Specifications

ParameterValue
BVDSS (Drain-Source Voltage)60V
RDS(ON) Max @ VGS = 5V6Ω
ID Max @ TA = +25°C220mA
Gate Threshold VoltageLow
Input CapacitanceLow
Switching SpeedFast
PackageSOT23
Case MaterialMolded Plastic, UL Flammability Classification Rating 94V-0
TerminalsMatte Tin Annealed over Alloy 42 Leadframe
Moisture SensitivityLevel 1 per J-STD-020
WeightApproximately 0.008 grams

Key Features

  • N-Channel MOSFET
  • Low On-Resistance
  • Low Gate Threshold Voltage
  • Low Input Capacitance
  • Fast Switching Speed
  • Small Surface Mount Package (SOT23)
  • ESD Protected Gate (1.2kV HBM, 1kV CDM)
  • Totally Lead-Free & Fully RoHS Compliant
  • Halogen and Antimony Free (Green Device)

Applications

  • Motor Control
  • Power Management Functions
  • Automotive Applications requiring specific change control and high reliability (e.g., AEC-Q100/101/200 compliant)

Q & A

  1. What is the maximum drain-source voltage (BVDSS) of the 2N7002AQ-13?
    The maximum drain-source voltage (BVDSS) is 60V.
  2. What is the maximum on-resistance (RDS(ON)) at VGS = 5V?
    The maximum on-resistance (RDS(ON)) at VGS = 5V is 6Ω.
  3. What is the maximum continuous drain current (ID) at TA = +25°C?
    The maximum continuous drain current (ID) at TA = +25°C is 220mA.
  4. What is the package type of the 2N7002AQ-13?
    The package type is SOT23.
  5. Is the 2N7002AQ-13 ESD protected?
    Yes, the gate is ESD protected to 1.2kV HBM and 1kV CDM.
  6. Is the 2N7002AQ-13 RoHS compliant?
    Yes, it is totally lead-free and fully RoHS compliant.
  7. What are the typical applications of the 2N7002AQ-13?
    Typical applications include motor control and power management functions, especially in automotive environments requiring high reliability.
  8. Is the 2N7002AQ-13 suitable for automotive applications?
    Yes, it is specifically qualified to meet automotive standards such as AEC-Q100/101/200 and is manufactured in IATF 16949 certified facilities.
  9. What is the moisture sensitivity level of the 2N7002AQ-13?
    The moisture sensitivity level is Level 1 per J-STD-020.
  10. Is the 2N7002AQ-13 halogen and antimony free?
    Yes, it is halogen and antimony free, classified as a 'Green' device.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:180mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):5V
Rds On (Max) @ Id, Vgs:5Ohm @ 115mA, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:23 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):370mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
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In Stock

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Same Series
2N7002AQ-7
2N7002AQ-7
MOSFET N-CH 60V 180MA SOT23

Similar Products

Part Number 2N7002AQ-13 2N7002KQ-13
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 180mA (Ta) 310mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V 5V, 10V
Rds On (Max) @ Id, Vgs 5Ohm @ 115mA, 10V 2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 2V @ 250µA 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - 0.3 nC @ 4.5 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 23 pF @ 25 V 50 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 370mW (Ta) 370mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-23-3 SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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