2N7002KQ-13
  • Share:

Diodes Incorporated 2N7002KQ-13

Manufacturer No:
2N7002KQ-13
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
2N7002 FAMILY SOT23 T&R 10K
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N7002KQ-13 is a high-performance N-channel enhancement mode MOSFET produced by Diodes Incorporated. This device is specifically designed to meet the stringent requirements of automotive applications and is qualified to AEC-Q101 standards, supported by a PPAP (Production Part Approval Process). It is manufactured in IATF 16949 certified facilities, ensuring high reliability and quality.

Key Specifications

Characteristic Symbol Value Unit
Drain-Source Voltage VDSS 60 V
Gate-Source Voltage VGSS ±20 V
Continuous Drain Current (VGS = 10V, TA = +25°C) ID 380 mA
Continuous Drain Current (VGS = 5V, TA = +25°C) ID 310 mA
Maximum Continuous Body Diode Forward Current IS 0.5 A
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) IDM 1.2 A
On-Resistance (VGS = 10V) RDS(ON) 2Ω
On-Resistance (VGS = 5V) RDS(ON) 3Ω
Package SOT23
Weight 0.008 grams

Key Features

  • Low On-Resistance
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • ESD Protected up to 2kV
  • Totally Lead-Free & Fully RoHS Compliant
  • Halogen and Antimony Free. “Green” Device
  • AEC-Q101 qualified and PPAP capable
  • Manufactured in IATF 16949 certified facilities

Applications

  • Motor Control
  • Power Management Functions
  • Backlighting
  • Low Side Load Switch
  • Level Shift Circuits
  • DC-DC Converter
  • Portable Applications (e.g., DSC, PDA, Cell Phone)

Q & A

  1. What is the maximum drain-source voltage of the 2N7002KQ MOSFET?

    The maximum drain-source voltage (VDSS) is 60V.

  2. What is the continuous drain current at VGS = 10V and TA = +25°C?

    The continuous drain current (ID) is 380mA.

  3. What is the on-resistance of the MOSFET at VGS = 10V?

    The on-resistance (RDS(ON)) is 2Ω.

  4. Is the 2N7002KQ MOSFET ESD protected?

    Yes, it is ESD protected up to 2kV.

  5. What is the package type of the 2N7002KQ MOSFET?

    The package type is SOT23.

  6. Is the 2N7002KQ MOSFET RoHS compliant?

    Yes, it is totally lead-free and fully RoHS compliant.

  7. What are some typical applications of the 2N7002KQ MOSFET?

    Typical applications include motor control, power management functions, backlighting, low side load switch, level shift circuits, DC-DC converter, and portable applications.

  8. Is the 2N7002KQ MOSFET suitable for automotive applications?

    Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive applications.

  9. What is the weight of the 2N7002KQ MOSFET?

    The weight is approximately 0.008 grams.

  10. What is the moisture sensitivity level of the 2N7002KQ MOSFET?

    The moisture sensitivity level is 1 per J-STD-020.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:310mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:0.3 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):370mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.34
2,178

Please send RFQ , we will respond immediately.

Same Series
DD15S20LV30/AA
DD15S20LV30/AA
CONN D-SUB HD RCPT 15P SLDR CUP
RD15S10HT20/AA
RD15S10HT20/AA
CONN D-SUB RCPT 15POS CRIMP
DD15S20LVLX
DD15S20LVLX
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20W0S
DD15S20W0S
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S10H00/AA
DD26S10H00/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD26S10HT0/AA
DD26S10HT0/AA
CONN D-SUB HD RCPT 26POS CRIMP
CBC9W4S10HE3S/AA
CBC9W4S10HE3S/AA
CONN D-SUB RCPT 9POS CRIMP
DD26S20W00
DD26S20W00
CONN D-SUB HD RCPT 26P SLDR CUP
CBC21W1S10HE2X/AA
CBC21W1S10HE2X/AA
CONN D-SUB RCPT 21POS CRIMP
DD44S32S60T2X
DD44S32S60T2X
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20WE20/AA
DD26S20WE20/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20WE2X/AA
DD26S20WE2X/AA
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number 2N7002KQ-13 2N7002AQ-13
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 310mA (Ta) 180mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 5V
Rds On (Max) @ Id, Vgs 2Ohm @ 500mA, 10V 5Ohm @ 115mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.3 nC @ 4.5 V -
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 50 pF @ 25 V 23 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 370mW (Ta) 370mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-23-3 SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

Related Product By Categories

IRF5305PBF
IRF5305PBF
Infineon Technologies
MOSFET P-CH 55V 31A TO220AB
PHD71NQ03LT,118
PHD71NQ03LT,118
NXP USA Inc.
TRANSISTOR >30MHZ
IXFH60N65X2-4
IXFH60N65X2-4
IXYS
MOSFET N-CH 650V 60A TO247-4L
STP19NF20
STP19NF20
STMicroelectronics
MOSFET N-CH 200V 15A TO220AB
FQA70N10
FQA70N10
onsemi
MOSFET N-CH 100V 70A TO3PN
FCD3400N80Z
FCD3400N80Z
onsemi
MOSFET N-CH 800V 2A DPAK
BUK9635-55A,118
BUK9635-55A,118
Nexperia USA Inc.
MOSFET N-CH 55V 34A D2PAK
STL36N55M5
STL36N55M5
STMicroelectronics
MOSFET N-CH 550V 22.5A 4PWRFLAT
NVMFS6H852NLT1G
NVMFS6H852NLT1G
onsemi
MOSFET N-CH 80V 11A/42A 5DFN
NTMFS5H409NLT3G
NTMFS5H409NLT3G
onsemi
MOSFET N-CH 40V 41A/270A 5DFN
BUK762R6-60E,118
BUK762R6-60E,118
Nexperia USA Inc.
MOSFET N-CH 60V 120A D2PAK
STW48NM60N
STW48NM60N
STMicroelectronics
MOSFET N-CH 600V 44A TO247

Related Product By Brand

BAS70-06-7-F
BAS70-06-7-F
Diodes Incorporated
DIODE ARRAY SCHOTTKY 70V SOT23-3
BAV99BRW-7-F
BAV99BRW-7-F
Diodes Incorporated
DIODE ARRAY GP 75V 150MA SOT363
BAV21W-7-F
BAV21W-7-F
Diodes Incorporated
DIODE GEN PURP 200V 200MA SOD123
BAV21WS-7-G
BAV21WS-7-G
Diodes Incorporated
DIODE GEN PURP 200V 200MA SOD323
BZX84C39-7-F-79
BZX84C39-7-F-79
Diodes Incorporated
DIODE ZENER
BZX84C18-7-F-79
BZX84C18-7-F-79
Diodes Incorporated
DIODE ZENER 18V 300MW SOT23
BZX84C16-7-F-31
BZX84C16-7-F-31
Diodes Incorporated
DIODE ZENER 16V 300MW SOT23
BCX5616TA
BCX5616TA
Diodes Incorporated
TRANS NPN 80V 1A SOT89-3
BCP5616QTA
BCP5616QTA
Diodes Incorporated
TRANS NPN 80V 1A SOT223-3
BC857BT-7-F
BC857BT-7-F
Diodes Incorporated
TRANS PNP 45V 0.1A SOT523
MMBF170-7-F
MMBF170-7-F
Diodes Incorporated
MOSFET N-CH 60V 500MA SOT23-3
BSS123TC
BSS123TC
Diodes Incorporated
MOSFET N-CH 100V 170MA SOT23-3