STU10N60M2
  • Share:

STMicroelectronics STU10N60M2

Manufacturer No:
STU10N60M2
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 7.5A IPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STU10N60M2 is an N-channel Power MOSFET developed by STMicroelectronics using the MDmesh II Plus technology. This device is designed to offer high efficiency and robust performance, making it suitable for demanding applications. The STU10N60M2 is available in the IPAK package and features a low on-resistance and optimized switching characteristics, thanks to its advanced strip layout and vertical structure.

Key Specifications

Parameter Value Unit
VDS @ TJ max. 650 V
RDS(on) max. 0.55 Ω (typ.), 0.60 Ω (max.) Ω
ID (continuous) at TC = 25 °C 7.5 A
ID (continuous) at TC = 100 °C 4.9 A
IDM (pulsed) 30 A
PTOT (total power dissipation) at TC = 25 °C 85 W
VGS (gate-source voltage) ±25 V
Tstg (storage temperature range) -55 to 150 °C
Package IPAK

Key Features

  • Extremely low gate charge (Qg)
  • Excellent output capacitance (Coss) profile
  • 100% avalanche tested
  • Zener-protected
  • Low on-resistance and optimized switching characteristics

Applications

The STU10N60M2 is particularly suited for high-efficiency switching applications, including but not limited to:

  • Power supplies and converters
  • Motor control and drives
  • High-frequency switching circuits
  • Industrial and automotive systems requiring high reliability and efficiency

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STU10N60M2?

    The maximum drain-source voltage (VDS) is 650 V.

  2. What is the typical on-resistance (RDS(on)) of the STU10N60M2?

    The typical on-resistance (RDS(on)) is 0.55 Ω, with a maximum value of 0.60 Ω.

  3. What is the continuous drain current (ID) at 25 °C?

    The continuous drain current (ID) at 25 °C is 7.5 A.

  4. What is the maximum pulsed drain current (IDM)?

    The maximum pulsed drain current (IDM) is 30 A.

  5. What is the total power dissipation (PTOT) at 25 °C?

    The total power dissipation (PTOT) at 25 °C is 85 W.

  6. What is the gate-source voltage (VGS) range?

    The gate-source voltage (VGS) range is ±25 V.

  7. What are the key features of the STU10N60M2?

    The key features include extremely low gate charge, excellent output capacitance profile, 100% avalanche tested, and Zener-protected.

  8. In what package is the STU10N60M2 available?

    The STU10N60M2 is available in the IPAK package.

  9. What are the typical applications of the STU10N60M2?

    The typical applications include high-efficiency switching applications such as power supplies, motor control, and high-frequency switching circuits.

  10. What technology is used in the STU10N60M2?

    The STU10N60M2 is developed using the MDmesh II Plus technology.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:7.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:600mOhm @ 3A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:13.5 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:400 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):85W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-251 (IPAK)
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
0 Remaining View Similar

In Stock

$1.59
419

Please send RFQ , we will respond immediately.

Same Series
STD10N60M2
STD10N60M2
MOSFET N-CH 600V 7.5A DPAK
STP10N60M2
STP10N60M2
MOSFET N-CH 600V 7.5A TO220
STB10N60M2
STB10N60M2
MOSFET N-CH 600V 7.5A D2PAK

Similar Products

Part Number STU10N60M2 STU13N60M2 STU12N60M2 STU16N60M2
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Obsolete Active Active Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 7.5A (Tc) 11A (Tc) 9A (Tc) 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 600mOhm @ 3A, 10V 380mOhm @ 5.5A, 10V 450mOhm @ 4.5A, 10V 320mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 13.5 nC @ 10 V 17 nC @ 10 V 16 nC @ 10 V 19 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 400 pF @ 100 V 580 pF @ 100 V 538 pF @ 100 V 700 pF @ 100 V
FET Feature - - - -
Power Dissipation (Max) 85W (Tc) 110W (Tc) 85W (Tc) 110W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-251 (IPAK) TO-251 (IPAK) TO-251 (IPAK) TO-251 (IPAK)
Package / Case TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA

Related Product By Categories

BSS123NH6327XTSA1
BSS123NH6327XTSA1
Infineon Technologies
MOSFET N-CH 100V 190MA SOT23-3
NTH4LN019N65S3H
NTH4LN019N65S3H
onsemi
POWER MOSFET, N-CHANNEL, SUPERFE
BSC093N15NS5ATMA1
BSC093N15NS5ATMA1
Infineon Technologies
MOSFET N-CH 150V 87A TDSON
STQ1HNK60R-AP
STQ1HNK60R-AP
STMicroelectronics
MOSFET N-CH 600V 400MA TO92-3
STF13N65M2
STF13N65M2
STMicroelectronics
MOSFET N-CH 650V 10A TO220FP
STB80NF55-06T4
STB80NF55-06T4
STMicroelectronics
MOSFET N-CH 55V 80A D2PAK
STF28N65M2
STF28N65M2
STMicroelectronics
MOSFET N-CH 650V 20A TO220FP
STL36N55M5
STL36N55M5
STMicroelectronics
MOSFET N-CH 550V 22.5A 4PWRFLAT
STW21N90K5
STW21N90K5
STMicroelectronics
MOSFET N-CH 900V 18.5A TO247-3
2N7002H-13
2N7002H-13
Diodes Incorporated
MOSFET N-CH 60V 170MA SOT23
PMV65XP/MIR
PMV65XP/MIR
Nexperia USA Inc.
MOSFET P-CH 20V 2.8A TO236AB
FDMS86101E
FDMS86101E
onsemi
MOSFET N-CH 100V 12.4A/60A 8PQFN

Related Product By Brand

TMMDB3TG
TMMDB3TG
STMicroelectronics
DIAC 30-34V 2A MINIMELF
BTA08-600CWRG
BTA08-600CWRG
STMicroelectronics
TRIAC ALTERNISTOR 600V TO220AB
STD6N80K5
STD6N80K5
STMicroelectronics
MOSFET N-CH 800V 4.5A DPAK
STM32F723ZET6
STM32F723ZET6
STMicroelectronics
IC MCU 32BIT 512KB FLASH 144LQFP
STM32F072RBH6
STM32F072RBH6
STMicroelectronics
IC MCU 32BIT 128KB FLASH 64UFBGA
STM32F091VCT7TR
STM32F091VCT7TR
STMicroelectronics
IC MCU 32BIT 256KB FLSH 100LFQFP
STM8AF6246TDSSSX
STM8AF6246TDSSSX
STMicroelectronics
IC MCU 8BIT 16KB FLASH 32LQFP
VIPER122LSTR
VIPER122LSTR
STMicroelectronics
IC OFFLINE SW MULT TOP 10SSOP
VNQ6040S-E
VNQ6040S-E
STMicroelectronics
IC PWR DRVR N-CHAN 1:1 PWRSSO36
VND7140AJ12TR-E
VND7140AJ12TR-E
STMicroelectronics
IC PWR DRVR N-CHAN 1:1 PWRSSO12
PSD813F2A-90M
PSD813F2A-90M
STMicroelectronics
IC FLASH 1M PARALLEL 52PQFP
AIS326DQ
AIS326DQ
STMicroelectronics
ACCEL 2-6G I2C/SPI 28QFPN