STU10N60M2
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STMicroelectronics STU10N60M2

Manufacturer No:
STU10N60M2
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 7.5A IPAK
Delivery:
Payment:
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Product Introduction

Overview

The STU10N60M2 is an N-channel Power MOSFET developed by STMicroelectronics using the MDmesh II Plus technology. This device is designed to offer high efficiency and robust performance, making it suitable for demanding applications. The STU10N60M2 is available in the IPAK package and features a low on-resistance and optimized switching characteristics, thanks to its advanced strip layout and vertical structure.

Key Specifications

Parameter Value Unit
VDS @ TJ max. 650 V
RDS(on) max. 0.55 Ω (typ.), 0.60 Ω (max.) Ω
ID (continuous) at TC = 25 °C 7.5 A
ID (continuous) at TC = 100 °C 4.9 A
IDM (pulsed) 30 A
PTOT (total power dissipation) at TC = 25 °C 85 W
VGS (gate-source voltage) ±25 V
Tstg (storage temperature range) -55 to 150 °C
Package IPAK

Key Features

  • Extremely low gate charge (Qg)
  • Excellent output capacitance (Coss) profile
  • 100% avalanche tested
  • Zener-protected
  • Low on-resistance and optimized switching characteristics

Applications

The STU10N60M2 is particularly suited for high-efficiency switching applications, including but not limited to:

  • Power supplies and converters
  • Motor control and drives
  • High-frequency switching circuits
  • Industrial and automotive systems requiring high reliability and efficiency

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STU10N60M2?

    The maximum drain-source voltage (VDS) is 650 V.

  2. What is the typical on-resistance (RDS(on)) of the STU10N60M2?

    The typical on-resistance (RDS(on)) is 0.55 Ω, with a maximum value of 0.60 Ω.

  3. What is the continuous drain current (ID) at 25 °C?

    The continuous drain current (ID) at 25 °C is 7.5 A.

  4. What is the maximum pulsed drain current (IDM)?

    The maximum pulsed drain current (IDM) is 30 A.

  5. What is the total power dissipation (PTOT) at 25 °C?

    The total power dissipation (PTOT) at 25 °C is 85 W.

  6. What is the gate-source voltage (VGS) range?

    The gate-source voltage (VGS) range is ±25 V.

  7. What are the key features of the STU10N60M2?

    The key features include extremely low gate charge, excellent output capacitance profile, 100% avalanche tested, and Zener-protected.

  8. In what package is the STU10N60M2 available?

    The STU10N60M2 is available in the IPAK package.

  9. What are the typical applications of the STU10N60M2?

    The typical applications include high-efficiency switching applications such as power supplies, motor control, and high-frequency switching circuits.

  10. What technology is used in the STU10N60M2?

    The STU10N60M2 is developed using the MDmesh II Plus technology.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:7.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:600mOhm @ 3A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:13.5 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:400 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):85W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-251 (IPAK)
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
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Similar Products

Part Number STU10N60M2 STU13N60M2 STU12N60M2 STU16N60M2
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Obsolete Active Active Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 7.5A (Tc) 11A (Tc) 9A (Tc) 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 600mOhm @ 3A, 10V 380mOhm @ 5.5A, 10V 450mOhm @ 4.5A, 10V 320mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 13.5 nC @ 10 V 17 nC @ 10 V 16 nC @ 10 V 19 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 400 pF @ 100 V 580 pF @ 100 V 538 pF @ 100 V 700 pF @ 100 V
FET Feature - - - -
Power Dissipation (Max) 85W (Tc) 110W (Tc) 85W (Tc) 110W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-251 (IPAK) TO-251 (IPAK) TO-251 (IPAK) TO-251 (IPAK)
Package / Case TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA

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