STU10N60M2
  • Share:

STMicroelectronics STU10N60M2

Manufacturer No:
STU10N60M2
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 7.5A IPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STU10N60M2 is an N-channel Power MOSFET developed by STMicroelectronics using the MDmesh II Plus technology. This device is designed to offer high efficiency and robust performance, making it suitable for demanding applications. The STU10N60M2 is available in the IPAK package and features a low on-resistance and optimized switching characteristics, thanks to its advanced strip layout and vertical structure.

Key Specifications

Parameter Value Unit
VDS @ TJ max. 650 V
RDS(on) max. 0.55 Ω (typ.), 0.60 Ω (max.) Ω
ID (continuous) at TC = 25 °C 7.5 A
ID (continuous) at TC = 100 °C 4.9 A
IDM (pulsed) 30 A
PTOT (total power dissipation) at TC = 25 °C 85 W
VGS (gate-source voltage) ±25 V
Tstg (storage temperature range) -55 to 150 °C
Package IPAK

Key Features

  • Extremely low gate charge (Qg)
  • Excellent output capacitance (Coss) profile
  • 100% avalanche tested
  • Zener-protected
  • Low on-resistance and optimized switching characteristics

Applications

The STU10N60M2 is particularly suited for high-efficiency switching applications, including but not limited to:

  • Power supplies and converters
  • Motor control and drives
  • High-frequency switching circuits
  • Industrial and automotive systems requiring high reliability and efficiency

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STU10N60M2?

    The maximum drain-source voltage (VDS) is 650 V.

  2. What is the typical on-resistance (RDS(on)) of the STU10N60M2?

    The typical on-resistance (RDS(on)) is 0.55 Ω, with a maximum value of 0.60 Ω.

  3. What is the continuous drain current (ID) at 25 °C?

    The continuous drain current (ID) at 25 °C is 7.5 A.

  4. What is the maximum pulsed drain current (IDM)?

    The maximum pulsed drain current (IDM) is 30 A.

  5. What is the total power dissipation (PTOT) at 25 °C?

    The total power dissipation (PTOT) at 25 °C is 85 W.

  6. What is the gate-source voltage (VGS) range?

    The gate-source voltage (VGS) range is ±25 V.

  7. What are the key features of the STU10N60M2?

    The key features include extremely low gate charge, excellent output capacitance profile, 100% avalanche tested, and Zener-protected.

  8. In what package is the STU10N60M2 available?

    The STU10N60M2 is available in the IPAK package.

  9. What are the typical applications of the STU10N60M2?

    The typical applications include high-efficiency switching applications such as power supplies, motor control, and high-frequency switching circuits.

  10. What technology is used in the STU10N60M2?

    The STU10N60M2 is developed using the MDmesh II Plus technology.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:7.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:600mOhm @ 3A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:13.5 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:400 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):85W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-251 (IPAK)
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
0 Remaining View Similar

In Stock

$1.59
419

Please send RFQ , we will respond immediately.

Same Series
STD10N60M2
STD10N60M2
MOSFET N-CH 600V 7.5A DPAK
STP10N60M2
STP10N60M2
MOSFET N-CH 600V 7.5A TO220
STB10N60M2
STB10N60M2
MOSFET N-CH 600V 7.5A D2PAK

Similar Products

Part Number STU10N60M2 STU13N60M2 STU12N60M2 STU16N60M2
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Obsolete Active Active Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 7.5A (Tc) 11A (Tc) 9A (Tc) 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 600mOhm @ 3A, 10V 380mOhm @ 5.5A, 10V 450mOhm @ 4.5A, 10V 320mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 13.5 nC @ 10 V 17 nC @ 10 V 16 nC @ 10 V 19 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 400 pF @ 100 V 580 pF @ 100 V 538 pF @ 100 V 700 pF @ 100 V
FET Feature - - - -
Power Dissipation (Max) 85W (Tc) 110W (Tc) 85W (Tc) 110W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-251 (IPAK) TO-251 (IPAK) TO-251 (IPAK) TO-251 (IPAK)
Package / Case TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA

Related Product By Categories

BSS84AKM,315
BSS84AKM,315
Nexperia USA Inc.
MOSFET P-CH 50V 230MA DFN1006-3
SCTWA30N120
SCTWA30N120
STMicroelectronics
IC POWER MOSFET 1200V HIP247
FDMS86255ET150
FDMS86255ET150
onsemi
MOSFET N-CH 150V 10A/63A POWER56
IRFB3607PBF
IRFB3607PBF
Infineon Technologies
MOSFET N-CH 75V 80A TO220AB
FDB12N50TM
FDB12N50TM
onsemi
MOSFET N-CH 500V 11.5A D2PAK
CSD17581Q5AT
CSD17581Q5AT
Texas Instruments
MOSFET N-CH 30V 24A/123A 8VSON
PSMN2R0-30YLE,115
PSMN2R0-30YLE,115
Nexperia USA Inc.
MOSFET N-CH 30V 100A LFPAK56
STP8N120K5
STP8N120K5
STMicroelectronics
MOSFET N-CH 1200V 6A TO220
STW20N95K5
STW20N95K5
STMicroelectronics
MOSFET N-CH 950V 17.5A TO247-3
STW45N60DM2AG
STW45N60DM2AG
STMicroelectronics
MOSFET N-CH 600V 34A TO247
NVMFS6H852NLT1G
NVMFS6H852NLT1G
onsemi
MOSFET N-CH 80V 11A/42A 5DFN
NTD20N06LT4
NTD20N06LT4
onsemi
MOSFET N-CH 60V 20A DPAK

Related Product By Brand

STL76DN4LF7AG
STL76DN4LF7AG
STMicroelectronics
MOSFET 2N-CH 40V 40A PWRFLAT
STL225N6F7AG
STL225N6F7AG
STMicroelectronics
MOSFET N-CH 60V 120A POWERFLAT
STGWA19NC60HD
STGWA19NC60HD
STMicroelectronics
IGBT 600V 52A 208W TO247
STM32F334R8T7
STM32F334R8T7
STMicroelectronics
IC MCU 32BIT 64KB FLASH 64LQFP
STM32F215VET6
STM32F215VET6
STMicroelectronics
IC MCU 32BIT 512KB FLASH 100LQFP
STG3682QTR
STG3682QTR
STMicroelectronics
IC SWITCH DUAL SPDT 10QFN
TDA7360HS
TDA7360HS
STMicroelectronics
IC AMP AB MONO/STER 11MULTIWATT
M74HC04RM13TR
M74HC04RM13TR
STMicroelectronics
IC INVERTER 6CH 1-INP 14SO
M24C04-FMC5TG
M24C04-FMC5TG
STMicroelectronics
IC EEPROM 4KBIT I2C 8UFDFPN
M24C04-WMN6
M24C04-WMN6
STMicroelectronics
IC EEPROM 4KBIT I2C 400KHZ 8SO
VNQ830PEP-E
VNQ830PEP-E
STMicroelectronics
IC PWR DRVR N-CHAN 1:1 PWRSSO24
L7809ACD2T-TR
L7809ACD2T-TR
STMicroelectronics
IC REG LINEAR 9V 1.5A D2PAK