STB10N60M2
  • Share:

STMicroelectronics STB10N60M2

Manufacturer No:
STB10N60M2
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 600V 7.5A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STB10N60M2 is an N-channel power MOSFET developed by STMicroelectronics using the advanced MDmesh M2 technology. This device is designed to offer high performance and reliability in various power management applications. With its strip layout and improved vertical structure, the STB10N60M2 provides enhanced electrical characteristics and thermal efficiency.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 600 V
RDS(on) (Drain-Source On-Resistance) 0.55 Ω
ID (Drain Current) 7.5 A
PD (Power Dissipation) 85 W
Package TO-263 (D2PAK)

Key Features

  • MDmesh M2 technology for improved electrical and thermal performance
  • High voltage rating of 600 V
  • Low on-resistance of 0.55 Ω typical
  • High drain current capability of 7.5 A
  • High power dissipation of 85 W
  • Surface mount TO-263 (D2PAK) package for easy integration

Applications

  • Power supplies and DC-DC converters
  • Motor control and drive systems
  • Industrial automation and control systems
  • Renewable energy systems (e.g., solar and wind power)
  • High-voltage switching applications

Q & A

  1. What is the maximum drain-source voltage of the STB10N60M2?

    The maximum drain-source voltage (VDS) is 600 V.

  2. What is the typical on-resistance of the STB10N60M2?

    The typical on-resistance (RDS(on)) is 0.55 Ω.

  3. What is the maximum drain current of the STB10N60M2?

    The maximum drain current (ID) is 7.5 A.

  4. What is the power dissipation capability of the STB10N60M2?

    The power dissipation (PD) is 85 W.

  5. In what package is the STB10N60M2 available?

    The STB10N60M2 is available in a TO-263 (D2PAK) package.

  6. What technology is used in the STB10N60M2?

    The STB10N60M2 uses the MDmesh M2 technology.

  7. What are some common applications for the STB10N60M2?

  8. Is the STB10N60M2 suitable for high-voltage switching applications?
  9. Where can I find detailed specifications for the STB10N60M2?

    Detailed specifications can be found in the datasheet available on the STMicroelectronics website or through distributors like Digi-Key.

  10. What are the benefits of using MDmesh M2 technology in the STB10N60M2?

    The MDmesh M2 technology provides improved electrical and thermal performance, enhancing the overall efficiency and reliability of the device.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:7.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:600mOhm @ 3A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:13.5 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:400 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):85W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

$1.09
186

Please send RFQ , we will respond immediately.

Same Series
STD10N60M2
STD10N60M2
MOSFET N-CH 600V 7.5A DPAK
STP10N60M2
STP10N60M2
MOSFET N-CH 600V 7.5A TO220
STB10N60M2
STB10N60M2
MOSFET N-CH 600V 7.5A D2PAK

Similar Products

Part Number STB10N60M2 STB13N60M2 STB18N60M2
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 7.5A (Tc) 11A (Tc) 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 600mOhm @ 3A, 10V 380mOhm @ 5.5A, 10V 280mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 13.5 nC @ 10 V 17 nC @ 10 V 21.5 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 400 pF @ 100 V 580 pF @ 100 V 791 pF @ 100 V
FET Feature - - -
Power Dissipation (Max) 85W (Tc) 110W (Tc) 110W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package D²PAK (TO-263) D²PAK (TO-263) D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Product By Categories

NTNS3193NZT5G
NTNS3193NZT5G
onsemi
MOSFET N-CH 20V 224MA 3XLLGA
FDMS86255ET150
FDMS86255ET150
onsemi
MOSFET N-CH 150V 10A/63A POWER56
PSMN1R0-40YLDX
PSMN1R0-40YLDX
Nexperia USA Inc.
MOSFET N-CH 40V 280A LFPAK56
STD36P4LLF6
STD36P4LLF6
STMicroelectronics
MOSFET P-CH 40V 36A DPAK
STW20N95K5
STW20N95K5
STMicroelectronics
MOSFET N-CH 950V 17.5A TO247-3
STF13N65M2
STF13N65M2
STMicroelectronics
MOSFET N-CH 650V 10A TO220FP
STF28N65M2
STF28N65M2
STMicroelectronics
MOSFET N-CH 650V 20A TO220FP
STL36N55M5
STL36N55M5
STMicroelectronics
MOSFET N-CH 550V 22.5A 4PWRFLAT
PMV50XP215
PMV50XP215
NXP USA Inc.
P-CHANNEL MOSFET
BSS84PW
BSS84PW
Infineon Technologies
MOSFET P-CH 60V 150MA SOT323-3
NTMFS4834NT1G
NTMFS4834NT1G
onsemi
MOSFET N-CH 30V 13A/130A 5DFN
FDC658APG
FDC658APG
onsemi
MOSFET P-CH 30V 4A SSOT6

Related Product By Brand

SMA6T28CAY
SMA6T28CAY
STMicroelectronics
TVS DIODE 24VWM 44.3VC SMA
NUCLEO-F303RE
NUCLEO-F303RE
STMicroelectronics
NUCLEO-64 STM32F303RE EVAL BRD
STGIPQ3H60T-HZS
STGIPQ3H60T-HZS
STMicroelectronics
PWR MODULE 600V 3A 26DIP
STGW80H65DFB-4
STGW80H65DFB-4
STMicroelectronics
IGBT BIPO 650V 80A TO247
STM32L433VCT3
STM32L433VCT3
STMicroelectronics
IC MCU 32BIT 256KB FLASH 100LQFP
STM8AF6286TCY
STM8AF6286TCY
STMicroelectronics
IC MCU 8BIT 64KB FLASH 32LQFP
ST7FLITE09Y0B6
ST7FLITE09Y0B6
STMicroelectronics
IC MCU 8BIT 1.5KB FLASH 16DIP
LD39015M33R
LD39015M33R
STMicroelectronics
IC REG LINEAR 3.3V 150MA SOT23-5
LM217MDT-TR
LM217MDT-TR
STMicroelectronics
IC REG LINEAR POS ADJ 500MA DPAK
L78M05ACDT-TR
L78M05ACDT-TR
STMicroelectronics
IC REG LINEAR 5V 500MA DPAK
L78M05CDT
L78M05CDT
STMicroelectronics
IC REG LINEAR 5V 500MA DPAK
AIS326DQ
AIS326DQ
STMicroelectronics
ACCEL 2-6G I2C/SPI 28QFPN