STB10N60M2
  • Share:

STMicroelectronics STB10N60M2

Manufacturer No:
STB10N60M2
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 600V 7.5A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STB10N60M2 is an N-channel power MOSFET developed by STMicroelectronics using the advanced MDmesh M2 technology. This device is designed to offer high performance and reliability in various power management applications. With its strip layout and improved vertical structure, the STB10N60M2 provides enhanced electrical characteristics and thermal efficiency.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 600 V
RDS(on) (Drain-Source On-Resistance) 0.55 Ω
ID (Drain Current) 7.5 A
PD (Power Dissipation) 85 W
Package TO-263 (D2PAK)

Key Features

  • MDmesh M2 technology for improved electrical and thermal performance
  • High voltage rating of 600 V
  • Low on-resistance of 0.55 Ω typical
  • High drain current capability of 7.5 A
  • High power dissipation of 85 W
  • Surface mount TO-263 (D2PAK) package for easy integration

Applications

  • Power supplies and DC-DC converters
  • Motor control and drive systems
  • Industrial automation and control systems
  • Renewable energy systems (e.g., solar and wind power)
  • High-voltage switching applications

Q & A

  1. What is the maximum drain-source voltage of the STB10N60M2?

    The maximum drain-source voltage (VDS) is 600 V.

  2. What is the typical on-resistance of the STB10N60M2?

    The typical on-resistance (RDS(on)) is 0.55 Ω.

  3. What is the maximum drain current of the STB10N60M2?

    The maximum drain current (ID) is 7.5 A.

  4. What is the power dissipation capability of the STB10N60M2?

    The power dissipation (PD) is 85 W.

  5. In what package is the STB10N60M2 available?

    The STB10N60M2 is available in a TO-263 (D2PAK) package.

  6. What technology is used in the STB10N60M2?

    The STB10N60M2 uses the MDmesh M2 technology.

  7. What are some common applications for the STB10N60M2?

  8. Is the STB10N60M2 suitable for high-voltage switching applications?
  9. Where can I find detailed specifications for the STB10N60M2?

    Detailed specifications can be found in the datasheet available on the STMicroelectronics website or through distributors like Digi-Key.

  10. What are the benefits of using MDmesh M2 technology in the STB10N60M2?

    The MDmesh M2 technology provides improved electrical and thermal performance, enhancing the overall efficiency and reliability of the device.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:7.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:600mOhm @ 3A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:13.5 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:400 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):85W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

$1.09
186

Please send RFQ , we will respond immediately.

Same Series
STD10N60M2
STD10N60M2
MOSFET N-CH 600V 7.5A DPAK
STP10N60M2
STP10N60M2
MOSFET N-CH 600V 7.5A TO220
STB10N60M2
STB10N60M2
MOSFET N-CH 600V 7.5A D2PAK

Similar Products

Part Number STB10N60M2 STB13N60M2 STB18N60M2
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 7.5A (Tc) 11A (Tc) 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 600mOhm @ 3A, 10V 380mOhm @ 5.5A, 10V 280mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 13.5 nC @ 10 V 17 nC @ 10 V 21.5 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 400 pF @ 100 V 580 pF @ 100 V 791 pF @ 100 V
FET Feature - - -
Power Dissipation (Max) 85W (Tc) 110W (Tc) 110W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package D²PAK (TO-263) D²PAK (TO-263) D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Product By Categories

IRF5305PBF
IRF5305PBF
Infineon Technologies
MOSFET P-CH 55V 31A TO220AB
BSC040N10NS5ATMA1
BSC040N10NS5ATMA1
Infineon Technologies
MOSFET N-CH 100V 100A TDSON
NTLJF4156NT1G
NTLJF4156NT1G
onsemi
MOSFET N-CH 30V 2.5A 6WDFN
NTS4173PT1G
NTS4173PT1G
onsemi
MOSFET P-CH 30V 1.2A SC70-3
NVF2955T1G
NVF2955T1G
onsemi
MOSFET P-CH 60V 2.6A SOT223
STQ1HNK60R-AP
STQ1HNK60R-AP
STMicroelectronics
MOSFET N-CH 600V 400MA TO92-3
NTMFS002P03P8ZT1G
NTMFS002P03P8ZT1G
onsemi
MOSFET, POWER -30V P-CHANNEL, SO
PHP9NQ20T,127
PHP9NQ20T,127
Nexperia USA Inc.
MOSFET N-CH 200V 8.7A TO220AB
PH5030AL,115
PH5030AL,115
Nexperia USA Inc.
MOSFET N-CH 30V 91A LFPAK56
NTTFS4939NTAG
NTTFS4939NTAG
onsemi
MOSFET N-CH 30V 8.9A/52A 8WDFN
STW6N120K3
STW6N120K3
STMicroelectronics
MOSFET N-CH 1200V 6A TO247
STP24N65M2
STP24N65M2
STMicroelectronics
MOSFET N-CH 650V 16A TO220

Related Product By Brand

STM32L496VET6
STM32L496VET6
STMicroelectronics
IC MCU 32BIT 512KB FLASH 100LQFP
STM32F423RHT6
STM32F423RHT6
STMicroelectronics
IC MCU 32BIT 1.5MB FLASH 64LQFP
TSZ124IYPT
TSZ124IYPT
STMicroelectronics
IC OPAMP ZER-DRIFT 4CIRC 14TSSOP
M74HC174RM13TR
M74HC174RM13TR
STMicroelectronics
IC FF D-TYPE SNGL 6BIT 16SOP
M27C4002-80C6
M27C4002-80C6
STMicroelectronics
IC EPROM 4MBIT PARALLEL 44PLCC
M27C4001-12F6
M27C4001-12F6
STMicroelectronics
IC EPROM 4MBIT PARALLEL 32CDIP
TDE1787ADP
TDE1787ADP
STMicroelectronics
IC PWR DRIVER BIPOLAR 1:1 8DIP
VN750SM
VN750SM
STMicroelectronics
IC PWR DRIVER N-CHANNEL 1:1 8SO
VNS3NV04D-E
VNS3NV04D-E
STMicroelectronics
IC PWR DRIVER N-CHANNEL 1:1 8SO
VNQ830PEP-E
VNQ830PEP-E
STMicroelectronics
IC PWR DRVR N-CHAN 1:1 PWRSSO24
LF25CDT-TRY
LF25CDT-TRY
STMicroelectronics
IC REG LINEAR 2.5V 500MA DPAK
L7809ABV
L7809ABV
STMicroelectronics
IC REG LINEAR 9V 1.5A TO220AB