STB10N60M2
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STMicroelectronics STB10N60M2

Manufacturer No:
STB10N60M2
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 600V 7.5A D2PAK
Delivery:
Payment:
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Product Introduction

Overview

The STB10N60M2 is an N-channel power MOSFET developed by STMicroelectronics using the advanced MDmesh M2 technology. This device is designed to offer high performance and reliability in various power management applications. With its strip layout and improved vertical structure, the STB10N60M2 provides enhanced electrical characteristics and thermal efficiency.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 600 V
RDS(on) (Drain-Source On-Resistance) 0.55 Ω
ID (Drain Current) 7.5 A
PD (Power Dissipation) 85 W
Package TO-263 (D2PAK)

Key Features

  • MDmesh M2 technology for improved electrical and thermal performance
  • High voltage rating of 600 V
  • Low on-resistance of 0.55 Ω typical
  • High drain current capability of 7.5 A
  • High power dissipation of 85 W
  • Surface mount TO-263 (D2PAK) package for easy integration

Applications

  • Power supplies and DC-DC converters
  • Motor control and drive systems
  • Industrial automation and control systems
  • Renewable energy systems (e.g., solar and wind power)
  • High-voltage switching applications

Q & A

  1. What is the maximum drain-source voltage of the STB10N60M2?

    The maximum drain-source voltage (VDS) is 600 V.

  2. What is the typical on-resistance of the STB10N60M2?

    The typical on-resistance (RDS(on)) is 0.55 Ω.

  3. What is the maximum drain current of the STB10N60M2?

    The maximum drain current (ID) is 7.5 A.

  4. What is the power dissipation capability of the STB10N60M2?

    The power dissipation (PD) is 85 W.

  5. In what package is the STB10N60M2 available?

    The STB10N60M2 is available in a TO-263 (D2PAK) package.

  6. What technology is used in the STB10N60M2?

    The STB10N60M2 uses the MDmesh M2 technology.

  7. What are some common applications for the STB10N60M2?

  8. Is the STB10N60M2 suitable for high-voltage switching applications?
  9. Where can I find detailed specifications for the STB10N60M2?

    Detailed specifications can be found in the datasheet available on the STMicroelectronics website or through distributors like Digi-Key.

  10. What are the benefits of using MDmesh M2 technology in the STB10N60M2?

    The MDmesh M2 technology provides improved electrical and thermal performance, enhancing the overall efficiency and reliability of the device.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:7.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:600mOhm @ 3A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:13.5 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:400 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):85W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Same Series
STP10N60M2
STP10N60M2
MOSFET N-CH 600V 7.5A TO220
STB10N60M2
STB10N60M2
MOSFET N-CH 600V 7.5A D2PAK
STU10N60M2
STU10N60M2
MOSFET N-CH 600V 7.5A IPAK

Similar Products

Part Number STB10N60M2 STB13N60M2 STB18N60M2
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 7.5A (Tc) 11A (Tc) 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 600mOhm @ 3A, 10V 380mOhm @ 5.5A, 10V 280mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 13.5 nC @ 10 V 17 nC @ 10 V 21.5 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 400 pF @ 100 V 580 pF @ 100 V 791 pF @ 100 V
FET Feature - - -
Power Dissipation (Max) 85W (Tc) 110W (Tc) 110W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package D²PAK (TO-263) D²PAK (TO-263) D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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