Overview
The STB18N60M2 is an N-channel Power MOSFET developed by STMicroelectronics using the advanced MDmesh M2 technology. This device is designed to offer high efficiency and reliability in various power management applications. With its strip layout and improved vertical structure, the STB18N60M2 exhibits low on-resistance and optimized switching characteristics, making it suitable for demanding high-efficiency converters.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| VDS (Drain-Source Voltage) | 600 | V |
| RDS(on) (Drain-Source On-Resistance) | 255 mΩ (typ.), 280 mΩ (max.) | mΩ |
| ID (Drain Current, continuous at TC = 25 °C) | 13 A | A |
| ID (Drain Current, continuous at TC = 100 °C) | 8 A | A |
| IDM (Drain Current, pulsed) | 52 A | A |
| PTOT (Total Power Dissipation at TC = 25 °C) | 110 W | W |
| VGS (Gate-Source Voltage) | ±25 V | V |
| Tstg (Storage Temperature Range) | -55 to 150 °C | °C |
| RthJC (Thermal Resistance, Junction-to-Case) | 1.14 °C/W | °C/W |
| RthJA (Thermal Resistance, Junction-to-Ambient) | 30 °C/W | °C/W |
| Qg (Total Gate Charge) | 21.5 nC | nC |
| Coss (Output Capacitance) | 40 pF | pF |
Key Features
- Extremely low gate charge
- Excellent output capacitance (Coss) profile
- 100% avalanche tested
- Zener-protected gate
- Low on-resistance and optimized switching characteristics
- High efficiency in high-frequency applications
Applications
- Switching applications
- LLC resonant converters
- High-efficiency power converters
- Power management in industrial and automotive systems
Q & A
- What is the maximum drain-source voltage of the STB18N60M2?
The maximum drain-source voltage (VDS) is 600 V.
- What is the typical on-resistance of the STB18N60M2?
The typical on-resistance (RDS(on)) is 255 mΩ.
- What is the continuous drain current at 25 °C for the STB18N60M2?
The continuous drain current (ID) at 25 °C is 13 A.
- What is the total power dissipation at 25 °C for the STB18N60M2?
The total power dissipation (PTOT) at 25 °C is 110 W.
- What is the gate-source voltage range for the STB18N60M2?
The gate-source voltage (VGS) range is ±25 V.
- What is the thermal resistance from junction to case for the STB18N60M2?
The thermal resistance from junction to case (RthJC) is 1.14 °C/W.
- What is the typical total gate charge for the STB18N60M2?
The typical total gate charge (Qg) is 21.5 nC.
- What are the common applications of the STB18N60M2?
Common applications include switching applications, LLC resonant converters, and high-efficiency power converters.
- What package type is the STB18N60M2 available in?
The STB18N60M2 is available in a D²PAK (TO-263) package.
- Is the STB18N60M2 Zener-protected?
Yes, the STB18N60M2 has a Zener-protected gate.
