STMicroelectronics STB18N60M2

Manufacturer No:: STB18N60M2
Manufacturer:: STMicroelectronics
Package:: Tape & Reel (TR)
Description:: MOSFET N-CH 600V 13A D2PAK
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Product Introduction

Overview

The STB18N60M2 is an N-channel Power MOSFET developed by STMicroelectronics using the advanced MDmesh M2 technology. This device is designed to offer high efficiency and reliability in various power management applications. With its strip layout and improved vertical structure, the STB18N60M2 exhibits low on-resistance and optimized switching characteristics, making it suitable for demanding high-efficiency converters.

Key Specifications

Parameter	Value	Unit
V_DS (Drain-Source Voltage)	600	V
R_DS(on) (Drain-Source On-Resistance)	255 mΩ (typ.), 280 mΩ (max.)	mΩ
I_D (Drain Current, continuous at T_C = 25 °C)	13 A	A
I_D (Drain Current, continuous at T_C = 100 °C)	8 A	A
I_DM (Drain Current, pulsed)	52 A	A
P_TOT (Total Power Dissipation at T_C = 25 °C)	110 W	W
V_GS (Gate-Source Voltage)	±25 V	V
T_stg (Storage Temperature Range)	-55 to 150 °C	°C
R_thJC (Thermal Resistance, Junction-to-Case)	1.14 °C/W	°C/W
R_thJA (Thermal Resistance, Junction-to-Ambient)	30 °C/W	°C/W
Q_g (Total Gate Charge)	21.5 nC	nC
C_oss (Output Capacitance)	40 pF	pF

Key Features

Extremely low gate charge
Excellent output capacitance (Coss) profile
100% avalanche tested
Zener-protected gate
Low on-resistance and optimized switching characteristics
High efficiency in high-frequency applications

Applications

Switching applications
LLC resonant converters
High-efficiency power converters
Power management in industrial and automotive systems

Q & A

What is the maximum drain-source voltage of the STB18N60M2?
The maximum drain-source voltage (V_DS) is 600 V.
What is the typical on-resistance of the STB18N60M2?
The typical on-resistance (R_DS(on)) is 255 mΩ.
What is the continuous drain current at 25 °C for the STB18N60M2?
The continuous drain current (I_D) at 25 °C is 13 A.
What is the total power dissipation at 25 °C for the STB18N60M2?
The total power dissipation (P_TOT) at 25 °C is 110 W.
What is the gate-source voltage range for the STB18N60M2?
The gate-source voltage (V_GS) range is ±25 V.
What is the thermal resistance from junction to case for the STB18N60M2?
The thermal resistance from junction to case (R_thJC) is 1.14 °C/W.
What is the typical total gate charge for the STB18N60M2?
The typical total gate charge (Q_g) is 21.5 nC.
What are the common applications of the STB18N60M2?
Common applications include switching applications, LLC resonant converters, and high-efficiency power converters.
What package type is the STB18N60M2 available in?
The STB18N60M2 is available in a D²PAK (TO-263) package.
Is the STB18N60M2 Zener-protected?
Yes, the STB18N60M2 has a Zener-protected gate.

In Stock

UnitPrice: $2.98

Quantity: 106

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Same Series

Part Number	STB18N60M2	STB18N60M6	STB28N60M2	STB10N60M2	STB13N60M2	STB18N60DM2
Manufacturer	STMicroelectronics	STMicroelectronics	STMicroelectronics	STMicroelectronics	STMicroelectronics	STMicroelectronics
Product Status	Active	Active	Active	Active	Active	Active
FET Type	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V	600 V	600 V	600 V	600 V	600 V
Current - Continuous Drain (Id) @ 25°C	13A (Tc)	13A (Tc)	22A (Tc)	7.5A (Tc)	11A (Tc)	12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V	10V	10V	10V	10V	10V
Rds On (Max) @ Id, Vgs	280mOhm @ 6.5A, 10V	280mOhm @ 6.5A, 10V	150mOhm @ 11A, 10V	600mOhm @ 3A, 10V	380mOhm @ 5.5A, 10V	295mOhm @ 6A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA	4.75V @ 250µA	4V @ 250µA	4V @ 250µA	4V @ 250µA	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	21.5 nC @ 10 V	16.8 nC @ 10 V	36 nC @ 10 V	13.5 nC @ 10 V	17 nC @ 10 V	20 nC @ 10 V
Vgs (Max)	±25V	±25V	±25V	±25V	±25V	±25V
Input Capacitance (Ciss) (Max) @ Vds	791 pF @ 100 V	650 pF @ 100 V	1440 pF @ 100 V	400 pF @ 100 V	580 pF @ 100 V	800 pF @ 100 V
FET Feature	-	-	-	-	-	-
Power Dissipation (Max)	110W (Tc)	110W (Tc)	170W (Tc)	85W (Tc)	110W (Tc)	90W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	150°C (TJ)
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Supplier Device Package	D2PAK	D²PAK (TO-263)	D²PAK (TO-263)	D²PAK (TO-263)	D²PAK (TO-263)	D²PAK (TO-263)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	600 V
Current - Continuous Drain (Id) @ 25°C:	13A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	280mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id:	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	21.5 nC @ 10 V
Vgs (Max):	±25V
Input Capacitance (Ciss) (Max) @ Vds:	791 pF @ 100 V
FET Feature:	-
Power Dissipation (Max):	110W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	D2PAK
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

STMicroelectronics STB18N60M2

Product Introduction

Overview

Key Specifications

Key Features

Applications

Q & A

Product Attributes

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