STP18N60M2
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STMicroelectronics STP18N60M2

Manufacturer No:
STP18N60M2
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 13A TO220
Delivery:
Payment:
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Product Introduction

Overview

The STP18N60M2 is an N-channel Power MOSFET developed by STMicroelectronics using the advanced MDmesh M2 technology. This device is designed to offer low on-resistance and optimized switching characteristics, making it highly suitable for demanding high-efficiency converters. The MOSFET features a strip layout and an improved vertical structure, which enhance its performance in various power conversion applications.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (VDS) 600 V
Drain Current (ID) Continuous at T = 25°C 13 A
Drain Current (ID) Continuous at T = 100°C 8 A
Pulsed Drain Current (IDM) 52 A
Total Power Dissipation at T = 25°C 110 W
Gate-Source Voltage (VGS) ±25 V
On-State Resistance (RDS(on)) 0.255 Ω Ω
Thermal Resistance Junction-Case (Rthj-case) 1.14 °C/W °C/W
Thermal Resistance Junction-Ambient (Rthj-amb) 62.5 °C/W °C/W
Operating Junction Temperature Range -55 to 150 °C °C
Package TO-220-3

Key Features

  • Extremely low gate charge
  • Excellent output capacitance (Coss) profile
  • 100% avalanche tested
  • Zener-protected gate
  • Low on-resistance and optimized switching characteristics
  • ESD protected gate

Applications

The STP18N60M2 is particularly suited for high-efficiency power conversion applications, including:

  • Switching applications
  • LLC converters
  • Resonant converters
  • SMPS (Switch-Mode Power Supplies)
  • Data centers
  • Solar microinverters

Q & A

  1. What is the drain-source voltage rating of the STP18N60M2?

    The drain-source voltage rating is 600 V.

  2. What is the continuous drain current at 25°C for the STP18N60M2?

    The continuous drain current at 25°C is 13 A.

  3. What is the total power dissipation at 25°C for the STP18N60M2?

    The total power dissipation at 25°C is 110 W.

  4. What is the on-state resistance of the STP18N60M2?

    The on-state resistance is 0.255 Ω.

  5. What package type is the STP18N60M2 available in?

    The STP18N60M2 is available in a TO-220-3 package.

  6. Is the STP18N60M2 ESD protected?
  7. What are some of the key features of the STP18N60M2?
  8. What are some typical applications for the STP18N60M2?
  9. What is the operating junction temperature range for the STP18N60M2?
  10. Is the STP18N60M2 RoHS compliant?

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:13A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:280mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:21.5 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:791 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):110W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
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Same Series
STP18N60M2
STP18N60M2
MOSFET N-CH 600V 13A TO220
STW18N60M2
STW18N60M2
MOSFET N-CH 600V 13A TO247

Similar Products

Part Number STP18N60M2 STP18N65M2 STP28N60M2 STP18N60M6 STP12N60M2 STP13N60M2 STP16N60M2 STP18N60DM2
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 650 V 600 V 600 V 600 V 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 13A (Tc) 12A (Tc) 24A (Tc) 13A (Tc) 9A (Tc) 11A (Tc) 12A (Tc) 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 280mOhm @ 6.5A, 10V 330mOhm @ 6A, 10V 150mOhm @ 12A, 10V 280mOhm @ 6.5A, 10V 450mOhm @ 4.5A, 10V 380mOhm @ 5.5A, 10V 320mOhm @ 6A, 10V 295mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4.75V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 21.5 nC @ 10 V 20 nC @ 10 V 37 nC @ 10 V 16.8 nC @ 10 V 16 nC @ 10 V 17 nC @ 10 V 19 nC @ 10 V 20 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 791 pF @ 100 V 770 pF @ 100 V 1370 pF @ 100 V 650 pF @ 100 V 538 pF @ 100 V 580 pF @ 100 V 700 pF @ 100 V 800 pF @ 100 V
FET Feature - - - - - - - -
Power Dissipation (Max) 110W (Tc) 110W (Tc) 170W (Tc) 110W (Tc) 85W (Tc) 110W (Tc) 110W (Tc) 90W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3

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