STMicroelectronics STP18N60M2

Manufacturer No:: STP18N60M2
Manufacturer:: STMicroelectronics
Package:: Tube
Description:: MOSFET N-CH 600V 13A TO220
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Product Introduction

Overview

The STP18N60M2 is an N-channel Power MOSFET developed by STMicroelectronics using the advanced MDmesh M2 technology. This device is designed to offer low on-resistance and optimized switching characteristics, making it highly suitable for demanding high-efficiency converters. The MOSFET features a strip layout and an improved vertical structure, which enhance its performance in various power conversion applications.

Key Specifications

Parameter	Value	Unit
Drain-Source Voltage (V_DS)	600	V
Drain Current (I_D) Continuous at T = 25°C	13	A
Drain Current (I_D) Continuous at T = 100°C	8	A
Pulsed Drain Current (I_DM)	52	A
Total Power Dissipation at T = 25°C	110	W
Gate-Source Voltage (V_GS)	±25	V
On-State Resistance (R_DS(on))	0.255 Ω	Ω
Thermal Resistance Junction-Case (R_thj-case)	1.14 °C/W	°C/W
Thermal Resistance Junction-Ambient (R_thj-amb)	62.5 °C/W	°C/W
Operating Junction Temperature Range	-55 to 150 °C	°C
Package	TO-220-3

Key Features

Extremely low gate charge
Excellent output capacitance (C_oss) profile
100% avalanche tested
Zener-protected gate
Low on-resistance and optimized switching characteristics
ESD protected gate

Applications

The STP18N60M2 is particularly suited for high-efficiency power conversion applications, including:

Switching applications
LLC converters
Resonant converters
SMPS (Switch-Mode Power Supplies)
Data centers
Solar microinverters

Q & A

What is the drain-source voltage rating of the STP18N60M2?
The drain-source voltage rating is 600 V.
What is the continuous drain current at 25°C for the STP18N60M2?
The continuous drain current at 25°C is 13 A.
What is the total power dissipation at 25°C for the STP18N60M2?
The total power dissipation at 25°C is 110 W.
What is the on-state resistance of the STP18N60M2?
The on-state resistance is 0.255 Ω.
What package type is the STP18N60M2 available in?
The STP18N60M2 is available in a TO-220-3 package.
Is the STP18N60M2 ESD protected?
What are some of the key features of the STP18N60M2?
What are some typical applications for the STP18N60M2?
What is the operating junction temperature range for the STP18N60M2?
Is the STP18N60M2 RoHS compliant?

In Stock

UnitPrice: $2.34

Quantity: 36

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Same Series

Part Number	STP18N60M2	STP18N65M2	STP28N60M2	STP18N60M6	STP12N60M2	STP13N60M2	STP16N60M2	STP18N60DM2
Manufacturer	STMicroelectronics	STMicroelectronics	STMicroelectronics	STMicroelectronics	STMicroelectronics	STMicroelectronics	STMicroelectronics	STMicroelectronics
Product Status	Active	Active	Active	Active	Active	Active	Active	Active
FET Type	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V	650 V	600 V	600 V	600 V	600 V	600 V	600 V
Current - Continuous Drain (Id) @ 25°C	13A (Tc)	12A (Tc)	24A (Tc)	13A (Tc)	9A (Tc)	11A (Tc)	12A (Tc)	12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V	10V	10V	10V	10V	10V	10V	10V
Rds On (Max) @ Id, Vgs	280mOhm @ 6.5A, 10V	330mOhm @ 6A, 10V	150mOhm @ 12A, 10V	280mOhm @ 6.5A, 10V	450mOhm @ 4.5A, 10V	380mOhm @ 5.5A, 10V	320mOhm @ 6A, 10V	295mOhm @ 6A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA	4V @ 250µA	4V @ 250µA	4.75V @ 250µA	4V @ 250µA	4V @ 250µA	4V @ 250µA	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	21.5 nC @ 10 V	20 nC @ 10 V	37 nC @ 10 V	16.8 nC @ 10 V	16 nC @ 10 V	17 nC @ 10 V	19 nC @ 10 V	20 nC @ 10 V
Vgs (Max)	±25V	±25V	±25V	±25V	±25V	±25V	±25V	±25V
Input Capacitance (Ciss) (Max) @ Vds	791 pF @ 100 V	770 pF @ 100 V	1370 pF @ 100 V	650 pF @ 100 V	538 pF @ 100 V	580 pF @ 100 V	700 pF @ 100 V	800 pF @ 100 V
FET Feature	-	-	-	-	-	-	-	-
Power Dissipation (Max)	110W (Tc)	110W (Tc)	170W (Tc)	110W (Tc)	85W (Tc)	110W (Tc)	110W (Tc)	90W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)	150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	150°C (TJ)	150°C (TJ)
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole
Supplier Device Package	TO-220	TO-220	TO-220	TO-220	TO-220	TO-220	TO-220	TO-220
Package / Case	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	600 V
Current - Continuous Drain (Id) @ 25°C:	13A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	280mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id:	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	21.5 nC @ 10 V
Vgs (Max):	±25V
Input Capacitance (Ciss) (Max) @ Vds:	791 pF @ 100 V
FET Feature:	-
Power Dissipation (Max):	110W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	TO-220
Package / Case:	TO-220-3

STMicroelectronics STP18N60M2

Product Introduction

Overview

Key Specifications

Key Features

Applications

Q & A

Product Attributes

In Stock

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