English
BSS138K-7
  • Share:

Diodes Incorporated BSS138K-7

Manufacturer No:
BSS138K-7
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 50V SOT23 T&R 3K
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSS138K-7 is a 50V N-Channel Enhancement Mode MOSFET produced by Diodes Incorporated. This device is designed to minimize on-state resistance (RDS(ON)) while maintaining superior switching performance, making it ideal for high-efficiency power-management applications. The BSS138K-7 is packaged in a SOT23 package and is fully RoHS compliant, halogen and antimony free, and lead-free.

Key Specifications

Characteristic Symbol Value Unit Test Condition
Drain-Source Voltage VDSS 50 V VGS = 0V, ID = 250µA
Gate-Source Voltage VGSS ±20 V
Continuous Drain Current ID 0.31 A (at TA = +25°C) VGS = 10V
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) IDM 0.8 A
Gate Threshold Voltage VGS(TH) 0.5 - 1.5 V VDS = VGS, ID = 250µA
Static Drain-Source On-Resistance RDS(ON) 1.3 - 3.5 Ω VGS = 10V, ID = 0.22A
Input Capacitance Ciss 23.2 pF VDS = 25V, VGS = 0V, f = 1.0MHz
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C

Key Features

  • Low On-Resistance (RDS(ON))
  • Low Input Capacitance
  • Fast Switching Speed
  • ESD Protected Gate
  • Totally Lead-Free & Fully RoHS Compliant
  • Halogen and Antimony Free, “Green” Device
  • Packaged in SOT23 with Molded Plastic, UL Flammability Classification Rating 94V-0

Applications

The BSS138K-7 is ideal for high-efficiency power-management applications, including:

  • Load switches
  • Systems requiring low on-state resistance and fast switching speeds
  • Automotive applications (with specific change control and PPAP capability)

Q & A

  1. What is the maximum drain-source voltage (VDSS) of the BSS138K-7?

    The maximum drain-source voltage (VDSS) is 50V.

  2. What is the continuous drain current (ID) at TA = +25°C?

    The continuous drain current (ID) at TA = +25°C is 0.31 A.

  3. What is the gate threshold voltage (VGS(TH)) range?

    The gate threshold voltage (VGS(TH)) range is 0.5 to 1.5 V.

  4. What is the static drain-source on-resistance (RDS(ON)) at VGS = 10V and ID = 0.22A?

    The static drain-source on-resistance (RDS(ON)) at VGS = 10V and ID = 0.22A is 1.3 to 3.5 Ω.

  5. Is the BSS138K-7 RoHS compliant?

    Yes, the BSS138K-7 is fully RoHS compliant, halogen and antimony free, and lead-free.

  6. What is the package type of the BSS138K-7?

    The package type of the BSS138K-7 is SOT23.

  7. What is the operating and storage temperature range of the BSS138K-7?

    The operating and storage temperature range is -55 to +150 °C.

  8. Does the BSS138K-7 have ESD protection?

    Yes, the BSS138K-7 has ESD protected gate.

  9. What are some typical applications for the BSS138K-7?

    The BSS138K-7 is ideal for load switches and other high-efficiency power-management applications, including automotive applications.

  10. Is the BSS138K-7 suitable for automotive applications?

    Yes, the BSS138K-7 is suitable for automotive applications requiring specific change control and PPAP capability).

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):50 V
Current - Continuous Drain (Id) @ 25°C:310mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:3.5Ohm @ 220mA, 10V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.95 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:23.2 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):380mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.06
7,937

Please send RFQ , we will respond immediately.

Same Series
RD15S10HT0/AA
RD15S10HT0/AA
CONN D-SUB RCPT 15POS CRIMP
DD15S20JVL0/AA
DD15S20JVL0/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S2S0V50
DD15S2S0V50
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20LVL0
DD15S20LVL0
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HE2X/AA
CBC13W3S10HE2X/AA
CONN D-SUB RCPT 13POS CRIMP
DD26S2S000
DD26S2S000
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0TX
DD26S2S0TX
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200EX
DD26S200EX
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0V5X/AA
DD26S2S0V5X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50V5X/AA
DD26S2S50V5X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S0V3X/AA
DD44S32S0V3X/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20WE30
DD26S20WE30
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number BSS138K-7 BSS138W-7 BSS138-7
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Discontinued at Digi-Key Discontinued at Digi-Key
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 50 V 50 V 50 V
Current - Continuous Drain (Id) @ 25°C 310mA (Ta) 200mA (Ta) 200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 3.5Ohm @ 220mA, 10V 3.5Ohm @ 220mA, 10V 3.5Ohm @ 220mA, 10V
Vgs(th) (Max) @ Id 1.5V @ 250µA 1.5V @ 250µA 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.95 nC @ 10 V - -
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 23.2 pF @ 25 V 50 pF @ 10 V 50 pF @ 10 V
FET Feature - - -
Power Dissipation (Max) 380mW 200mW (Ta) 300mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-23-3 SOT-323 SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3 SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3

Related Product By Categories

2N7002HSX
2N7002HSX
Nexperia USA Inc.
2N7002HS/SOT363/SC-88
NTMFS006N08MC
NTMFS006N08MC
onsemi
MOSFET N-CH 80V 9.3A/82A 8PQFN
NVR5198NLT1G
NVR5198NLT1G
onsemi
MOSFET N-CH 60V 1.7A SOT23-3
FQD19N10LTM
FQD19N10LTM
onsemi
MOSFET N-CH 100V 15.6A DPAK
CSD17581Q5AT
CSD17581Q5AT
Texas Instruments
MOSFET N-CH 30V 24A/123A 8VSON
NTMFS5C460NLT1G
NTMFS5C460NLT1G
onsemi
MOSFET N-CH 40V 5DFN
STF13N80K5
STF13N80K5
STMicroelectronics
MOSFET N-CH 800V 12A TO220FP
NTHL050N65S3HF
NTHL050N65S3HF
onsemi
MOSFET N-CH 650V 58A TO247-3
NTMFS5C612NLT1G
NTMFS5C612NLT1G
onsemi
MOSFET N-CH 60V 36A/235A 5DFN
STW88N65M5-4
STW88N65M5-4
STMicroelectronics
MOSFET N-CH 650V 84A TO247-4L
STD7N52DK3
STD7N52DK3
STMicroelectronics
MOSFET N-CH 525V 6A DPAK
STW6N120K3
STW6N120K3
STMicroelectronics
MOSFET N-CH 1200V 6A TO247

Related Product By Brand

BAV23AQ-7-F
BAV23AQ-7-F
Diodes Incorporated
HIVOLT SWITCHING DIODE BVR > 100
MBR20200CT-G1
MBR20200CT-G1
Diodes Incorporated
DIODE ARRAY SCHOTTKY 200V TO220
BZX84C3V9Q-7-F
BZX84C3V9Q-7-F
Diodes Incorporated
ZENER DIODE SOT23 T&R 3K
BZX84C47Q-7-F
BZX84C47Q-7-F
Diodes Incorporated
ZENER DIODE SOT23 T&R 3K
BZX84C36W-7-F
BZX84C36W-7-F
Diodes Incorporated
DIODE ZENER 36V 200MW SOT323
BZX84C5V1-7-F-79
BZX84C5V1-7-F-79
Diodes Incorporated
DIODE ZENER 5.1V 300MW SOT23
BC857CT-7-F
BC857CT-7-F
Diodes Incorporated
TRANS PNP 45V 0.1A SOT523
BCX5416TA
BCX5416TA
Diodes Incorporated
TRANS NPN 45V 1A SOT89-3
BC847BLD-7
BC847BLD-7
Diodes Incorporated
TRANS NPN 45V 0.2A SOT23-3
BSS8402DW-7
BSS8402DW-7
Diodes Incorporated
MOSFET N/P-CH 60V/50V SC70-6
74LVC1G08FW5-7
74LVC1G08FW5-7
Diodes Incorporated
IC GATE AND 1CH 2-INP DFN1010-6
74HCT164D14
74HCT164D14
Diodes Incorporated
LOGIC HCT STD DIP-14