BSS138W-7
  • Share:

Diodes Incorporated BSS138W-7

Manufacturer No:
BSS138W-7
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 50V 0.2A SOT323
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSS138W-7-F is a high-performance N-channel MOSFET produced by Diodes Incorporated. This small signal MOSFET is housed in a compact SOT-323 package, making it ideal for space-constrained designs. It is designed for general-purpose switching in digital circuits, offering a maximum drain-source voltage rating of 50V and a continuous drain current of 220mA. The MOSFET features a low on-resistance of 3.5 ohms, low threshold voltage, and fast switching speed, making it suitable for a wide range of electronic applications.

Key Specifications

Attribute Value Unit
FET Type N-Channel
No of Channels 1
Drain-to-Source Voltage (Vdss) 50 V
Drain-Source On Resistance (Rds(on)) 3.5 Ω
Rated Power Dissipation 200 mW
Gate-Source Voltage (Vgss) ±20 V
Drain Current (Id) 220 mA
Turn-on Delay Time 2.2-3.3 ns
Turn-off Delay Time 6.7-10 ns
Operating Temperature Range -55 to 150 °C
Gate Source Threshold Voltage 1-2 V
Input Capacitance 32-43 pF
Package Style SOT-323 (SC-70)
Mounting Method Surface Mount

Key Features

  • Enhanced Power Dissipation: The MOSFET can handle higher power levels without overheating.
  • High Power-Handling Capability: Suitable for applications requiring high current capacity.
  • Low Threshold Voltage: Allows the MOSFET to switch on more easily with less input energy.
  • Low On-Resistance: Reduces power loss during switching, improving efficiency.
  • Fast Switching Speed: Suitable for applications where rapid changes in voltage are required.
  • Low Leakage Currents: Reduces unnecessary power consumption.
  • ROHS Compliant: Environmentally friendly, without hazardous substances.
  • Halogen-Free and Small Size: Ideal for compact designs with reduced emissions.

Applications

The BSS138W-7-F is suitable for various applications due to its high efficiency and compact size. It finds use in:

  • Portable Devices: Smartphones, tablets, and wearable technology.
  • Industrial Control Systems: For general-purpose switching and control.
  • Automotive Electronics: In vehicle systems requiring low power and high efficiency.
  • LED Lighting Projects: For efficient switching and control in lighting applications.
  • Gaming Consoles: Where fast switching and low power consumption are critical.

Q & A

  1. What is the maximum drain-source voltage of the BSS138W-7-F MOSFET?

    The maximum drain-source voltage is 50V.

  2. What is the continuous drain current rating of the BSS138W-7-F?

    The continuous drain current rating is 220mA.

  3. What is the on-resistance of the BSS138W-7-F MOSFET?

    The on-resistance is 3.5 ohms.

  4. What is the operating temperature range of the BSS138W-7-F?

    The operating temperature range is -55°C to 150°C.

  5. What package type is the BSS138W-7-F MOSFET available in?

    The MOSFET is available in the SOT-323 (SC-70) package.

  6. Is the BSS138W-7-F ROHS compliant?

    Yes, the BSS138W-7-F is ROHS compliant.

  7. What are the typical applications of the BSS138W-7-F MOSFET?

    It is used in portable devices, industrial control systems, automotive electronics, LED lighting projects, and gaming consoles).

  8. What is the gate-source threshold voltage of the BSS138W-7-F?

    The gate-source threshold voltage is between 1 to 2V).

  9. Does the BSS138W-7-F have fast switching speeds?

    Yes, the BSS138W-7-F has fast switching speeds, making it suitable for applications requiring quick response times).

  10. Is the BSS138W-7-F halogen-free?

    Yes, the BSS138W-7-F is halogen-free).

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):50 V
Current - Continuous Drain (Id) @ 25°C:200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:3.5Ohm @ 220mA, 10V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):200mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-323
Package / Case:SC-70, SOT-323
0 Remaining View Similar

In Stock

-
167

Please send RFQ , we will respond immediately.

Same Series
BSS138W-7-F
BSS138W-7-F
MOSFET N-CH 50V 200MA SOT323

Similar Products

Part Number BSS138W-7 BSS138-7 BSS138K-7
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Discontinued at Digi-Key Discontinued at Digi-Key Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 50 V 50 V 50 V
Current - Continuous Drain (Id) @ 25°C 200mA (Ta) 200mA (Ta) 310mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 3.5Ohm @ 220mA, 10V 3.5Ohm @ 220mA, 10V 3.5Ohm @ 220mA, 10V
Vgs(th) (Max) @ Id 1.5V @ 250µA 1.5V @ 250µA 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - - 0.95 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 50 pF @ 10 V 50 pF @ 10 V 23.2 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 200mW (Ta) 300mW (Ta) 380mW
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-323 SOT-23-3 SOT-23-3
Package / Case SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

Related Product By Categories

BSS123NH6327XTSA1
BSS123NH6327XTSA1
Infineon Technologies
MOSFET N-CH 100V 190MA SOT23-3
STD26P3LLH6
STD26P3LLH6
STMicroelectronics
MOSFET P-CH 30V 12A DPAK
STB170NF04
STB170NF04
STMicroelectronics
MOSFET N-CH 40V 80A D2PAK
STW58N65DM2AG
STW58N65DM2AG
STMicroelectronics
MOSFET N-CH 650V 48A TO247
BSS138PW,115
BSS138PW,115
Nexperia USA Inc.
MOSFET N-CH 60V 320MA SOT323
STL38N65M5
STL38N65M5
STMicroelectronics
MOSFET N-CH 650V PWRFLAT HV
STH275N8F7-2AG
STH275N8F7-2AG
STMicroelectronics
MOSFET N-CH 80V 180A H2PAK-2
STH315N10F7-6
STH315N10F7-6
STMicroelectronics
MOSFET N-CH 100V 180A H2PAK-6
NX7002AKVL
NX7002AKVL
Nexperia USA Inc.
MOSFET N-CH 60V 190MA TO236AB
STH150N10F7-2
STH150N10F7-2
STMicroelectronics
MOSFET N-CH 100V 110A H2PAK-2
BBS3002-TL-1E
BBS3002-TL-1E
onsemi
MOSFET P-CH 60V 100A D2PAK
PH5030AL,115
PH5030AL,115
Nexperia USA Inc.
MOSFET N-CH 30V 91A LFPAK56

Related Product By Brand

BAS40-06-7-F
BAS40-06-7-F
Diodes Incorporated
DIODE ARRAY SCHOTTKY 40V SOT23-3
BAV99T-7-G
BAV99T-7-G
Diodes Incorporated
DIODE ARRAY GP 85V 75MA SOT523
MURS320-13-F
MURS320-13-F
Diodes Incorporated
DIODE GEN PURP 200V 3A SMC
BAS521LP-7B
BAS521LP-7B
Diodes Incorporated
DIODE GEN PURP 325V 400MA 2DFN
BZT52HC6V8WF-7
BZT52HC6V8WF-7
Diodes Incorporated
DIODE ZENER 6.8V 375MW SOD123F
BZX84B6V2Q-7-F
BZX84B6V2Q-7-F
Diodes Incorporated
TIGHT TOLERANCE ZENER SOT23 T&R
BZX84C16W-7-F
BZX84C16W-7-F
Diodes Incorporated
DIODE ZENER 16V 200MW SOT323
BZX84C15W-7
BZX84C15W-7
Diodes Incorporated
DIODE ZENER 15V 200MW SOT323
BFS17TA
BFS17TA
Diodes Incorporated
RF TRANS NPN 15V 1.3GHZ SOT23-3
BSS84DW-7
BSS84DW-7
Diodes Incorporated
MOSFET 2P-CH 50V 0.13A SC70-6
2N7002A-7
2N7002A-7
Diodes Incorporated
MOSFET N-CH 60V 180MA SOT23
74HCT595S16-13
74HCT595S16-13
Diodes Incorporated
HC HIGH PIN COUNT SO-16