BSS138W-7-F
  • Share:

Diodes Incorporated BSS138W-7-F

Manufacturer No:
BSS138W-7-F
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 50V 200MA SOT323
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSS138W-7-F is a high-performance N-channel MOSFET produced by Diodes Incorporated. This small signal MOSFET is designed for general-purpose switching in digital circuits and is particularly suited for low voltage and low power applications. It features a compact SOT-323 package, making it ideal for space-constrained designs. The BSS138W-7-F offers fast switching speeds, low on-resistance, and a low gate-source threshold voltage, ensuring efficient and reliable operation in various electronic systems.

Key Specifications

FET Type N-Channel
No of Channels 1
Drain-to-Source Voltage (Vdss) 50V
Drain-Source On Resistance (Rds(on)) 1.4Ω (at 10V)
Rated Power Dissipation (Pd) 200mW
Gate-Source Voltage (Vgss) ±20V
Continuous Drain Current (Id) 200mA
Turn-on Delay Time 20ns
Turn-off Delay Time 20ns
Operating Temperature Range -55°C to +150°C
Gate Source Threshold Voltage 1.2V
Input Capacitance 50pF
Package Style SOT-323 (SC-70)
Mounting Method Surface Mount

Key Features

  • Enhanced Power Dissipation: The MOSFET can handle higher power levels without overheating.
  • High Power-Handling Capability: Suitable for applications requiring high current capacity.
  • Low Threshold Voltage: Allows the MOSFET to switch on more easily with less input energy.
  • Low On-Resistance: Reduces power loss during switching, improving efficiency.
  • Fast Switching Speed: Suitable for applications where rapid changes in voltage are required.
  • Low Leakage Currents: Reduces unnecessary power consumption.
  • ROHS Compliant: Environmentally friendly, without hazardous substances.
  • Halogen-Free and Small Size: Ideal for compact designs with reduced emissions).

Applications

The BSS138W-7-F is suitable for various applications due to its high efficiency and small size. It is commonly used in:

  • Portable Devices: Such as smartphones, tablets, and wearable technology).
  • Industrial Control Systems: For efficient switching and control in industrial environments).
  • Automotive Electronics: For reliable operation in automotive systems).
  • LED Lighting Projects: Due to its low power consumption and high efficiency).
  • Power Management: In general power management circuits requiring fast switching and low on-resistance).

Q & A

  1. What is the maximum drain-source voltage of the BSS138W-7-F MOSFET?

    The maximum drain-source voltage (Vdss) is 50V.

  2. What is the on-resistance (Rds(on)) of the BSS138W-7-F?

    The on-resistance (Rds(on)) is 1.4Ω at 10V.

  3. What is the continuous drain current (Id) of the BSS138W-7-F?

    The continuous drain current (Id) is 200mA.

  4. What is the operating temperature range of the BSS138W-7-F?

    The operating temperature range is -55°C to +150°C.

  5. What is the gate-source threshold voltage of the BSS138W-7-F?

    The gate-source threshold voltage is 1.2V.

  6. What package style does the BSS138W-7-F come in?

    The BSS138W-7-F comes in a SOT-323 (SC-70) package.

  7. Is the BSS138W-7-F ROHS compliant?

    Yes, the BSS138W-7-F is ROHS compliant).

  8. What are some common applications of the BSS138W-7-F?

    Common applications include portable devices, industrial control systems, automotive electronics, and LED lighting projects).

  9. What is the maximum power dissipation of the BSS138W-7-F?

    The maximum power dissipation is 200mW.

  10. Does the BSS138W-7-F have fast switching speeds?

    Yes, the BSS138W-7-F has fast switching speeds, making it suitable for applications requiring rapid changes in voltage).

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):50 V
Current - Continuous Drain (Id) @ 25°C:200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:3.5Ohm @ 220mA, 10V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):200mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-323
Package / Case:SC-70, SOT-323
0 Remaining View Similar

In Stock

$0.32
2,857

Please send RFQ , we will respond immediately.

Same Series
BSS138W-7-F
BSS138W-7-F
MOSFET N-CH 50V 200MA SOT323

Similar Products

Part Number BSS138W-7-F BSS138-7-F BSS138Q-7-F
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 50 V 50 V 50 V
Current - Continuous Drain (Id) @ 25°C 200mA (Ta) 200mA (Ta) 200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 3.5Ohm @ 220mA, 10V 3.5Ohm @ 220mA, 10V 3.5Ohm @ 220mA, 10V
Vgs(th) (Max) @ Id 1.5V @ 250µA 1.5V @ 250µA 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - - -
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 50 pF @ 10 V 50 pF @ 10 V 50 pF @ 10 V
FET Feature - - -
Power Dissipation (Max) 200mW (Ta) 300mW (Ta) 300mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-323 SOT-23-3 SOT-23-3
Package / Case SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

Related Product By Categories

NTMFS006N08MC
NTMFS006N08MC
onsemi
MOSFET N-CH 80V 9.3A/82A 8PQFN
CSD17484F4
CSD17484F4
Texas Instruments
MOSFET N-CH 30V 3A 3PICOSTAR
FDMT80040DC
FDMT80040DC
onsemi
MOSFET N-CH 40V 420A 8PQFN
STD36P4LLF6
STD36P4LLF6
STMicroelectronics
MOSFET P-CH 40V 36A DPAK
IRF3710PBF
IRF3710PBF
Infineon Technologies
MOSFET N-CH 100V 57A TO220AB
IRF740PBF-BE3
IRF740PBF-BE3
Vishay Siliconix
MOSFET N-CH 400V 10A TO220AB
BUK7613-60E,118
BUK7613-60E,118
Nexperia USA Inc.
MOSFET N-CH 60V 58A D2PAK
NTMFS4C03NT1G
NTMFS4C03NT1G
onsemi
MOSFET N-CH 30V 30A/136A 5DFN
STF5N95K5
STF5N95K5
STMicroelectronics
MOSFET N-CH 950V 3.5A TO220FP
BSS84AKW
BSS84AKW
Nexperia USA Inc.
NOW NEXPERIA BSS84AKW - SMALL SI
STP18N60M2
STP18N60M2
STMicroelectronics
MOSFET N-CH 600V 13A TO220
2N7002E-7-G
2N7002E-7-G
Diodes Incorporated
MOSFET N-CH 60V SOT23

Related Product By Brand

BAT54CW-7-F
BAT54CW-7-F
Diodes Incorporated
DIODE ARRAY SCHOTTKY 30V SOT323
BAS70-04Q-7-F
BAS70-04Q-7-F
Diodes Incorporated
DIODE SCHOTTKY 70V 70MA SOT23
BAT54CW-7-F-79
BAT54CW-7-F-79
Diodes Incorporated
DIODE ARRAY SCHOTTKY 30V SOT323
BZX84C2V4W-7-F
BZX84C2V4W-7-F
Diodes Incorporated
DIODE ZENER 2.4V 200MW SOT323
BZX84B3V0Q-7-F
BZX84B3V0Q-7-F
Diodes Incorporated
TIGHT TOLERANCE ZENER SOT23 T&R
BZX84C18-7
BZX84C18-7
Diodes Incorporated
DIODE ZENER 18V 300MW SOT23
BCP5616TTC
BCP5616TTC
Diodes Incorporated
PWR MID PERF TRANSISTOR SOT223 T
2N7002A-7
2N7002A-7
Diodes Incorporated
MOSFET N-CH 60V 180MA SOT23
BSN20Q-7
BSN20Q-7
Diodes Incorporated
MOSFET N-CH 50V 500MA SOT23
2N7002E-7-G
2N7002E-7-G
Diodes Incorporated
MOSFET N-CH 60V SOT23
74LVC1G07FW4-7
74LVC1G07FW4-7
Diodes Incorporated
IC BUFFER NON-INVERT 5.5V 6DFN
74LVC1G08FW4-7
74LVC1G08FW4-7
Diodes Incorporated
IC GATE AND 1CH 2-INP DFN1010-6