BSS138-7-F
  • Share:

Diodes Incorporated BSS138-7-F

Manufacturer No:
BSS138-7-F
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 50V 200MA SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSS138-7-F is an N-Channel Enhancement Mode MOSFET produced by Diodes Incorporated. It is part of the BSS138 series and is available in a SOT-23-3 package. This MOSFET is designed to minimize on-state resistance while maintaining superior switching performance, making it ideal for high-efficiency power management applications.

Key Specifications

AttributeValueUnit
FET TypeN-Channel
Drain-to-Source Voltage (Vdss)50V
Drain-Source On Resistance (RDS(ON))3.5Ω @ VGS = 10V, ID = 0.22A
Rated Power Dissipation300mW
Package StyleSOT-23 (SC-59, TO-236)
Mounting MethodSurface Mount
Drain Current Continuous200mA
Gate-Source Voltage Continuous±20V
Operating and Storage Temperature Range-55 to +150°C
Thermal Resistance, Junction to Ambient417°C/W

Key Features

  • Low On-Resistance
  • Low Gate Threshold Voltage
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • Totally Lead-Free & Fully RoHS Compliant
  • Halogen and Antimony Free (Green Device)

Applications

The BSS138-7-F is suitable for various applications, including system/load switches and high-efficiency power management. It is particularly useful in scenarios requiring fast switching and low on-state resistance.

Q & A

  1. What is the drain-to-source voltage (Vdss) of the BSS138-7-F?
    The drain-to-source voltage (Vdss) is 50V.
  2. What is the on-state resistance (RDS(ON)) of the BSS138-7-F?
    The on-state resistance (RDS(ON)) is 3.5Ω at VGS = 10V and ID = 0.22A.
  3. What is the package style of the BSS138-7-F?
    The package style is SOT-23 (SC-59, TO-236).
  4. What is the mounting method for the BSS138-7-F?
    The mounting method is Surface Mount.
  5. What is the continuous drain current of the BSS138-7-F?
    The continuous drain current is 200 mA.
  6. What is the operating and storage temperature range of the BSS138-7-F?
    The operating and storage temperature range is -55 to +150 °C.
  7. Is the BSS138-7-F RoHS compliant?
    Yes, the BSS138-7-F is totally lead-free and fully RoHS compliant.
  8. What are some typical applications of the BSS138-7-F?
    Typical applications include system/load switches and high-efficiency power management.
  9. What is the thermal resistance, junction to ambient, of the BSS138-7-F?
    The thermal resistance, junction to ambient, is 417 °C/W.
  10. Are there any automotive-compliant versions of the BSS138-7-F?
    Yes, an automotive-compliant part is available under a separate datasheet (BSS138Q).

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):50 V
Current - Continuous Drain (Id) @ 25°C:200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:3.5Ohm @ 220mA, 10V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):300mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.22
4,024

Please send RFQ , we will respond immediately.

Same Series
BSS138Q-7-F
BSS138Q-7-F
MOSFET N-CH 50V 200MA SOT23-3

Similar Products

Part Number BSS138-7-F BSS138W-7-F BSS138Q-7-F
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 50 V 50 V 50 V
Current - Continuous Drain (Id) @ 25°C 200mA (Ta) 200mA (Ta) 200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 3.5Ohm @ 220mA, 10V 3.5Ohm @ 220mA, 10V 3.5Ohm @ 220mA, 10V
Vgs(th) (Max) @ Id 1.5V @ 250µA 1.5V @ 250µA 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - - -
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 50 pF @ 10 V 50 pF @ 10 V 50 pF @ 10 V
FET Feature - - -
Power Dissipation (Max) 300mW (Ta) 200mW (Ta) 300mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-23-3 SOT-323 SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3 SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3

Related Product By Categories

STP20NM50
STP20NM50
STMicroelectronics
MOSFET N-CH 500V 20A TO220AB
CSD17484F4
CSD17484F4
Texas Instruments
MOSFET N-CH 30V 3A 3PICOSTAR
FDB12N50TM
FDB12N50TM
onsemi
MOSFET N-CH 500V 11.5A D2PAK
2N7002 TR PBFREE
2N7002 TR PBFREE
Central Semiconductor Corp
MOSFET N-CH 60V 115MA SOT23
STP36NF06L
STP36NF06L
STMicroelectronics
MOSFET N-CH 60V 30A TO220AB
STD5NM60T4
STD5NM60T4
STMicroelectronics
MOSFET N-CH 600V 5A DPAK
STV270N4F3
STV270N4F3
STMicroelectronics
MOSFET N-CH 40V 270A 10POWERSO
NTMFS002P03P8ZT1G
NTMFS002P03P8ZT1G
onsemi
MOSFET, POWER -30V P-CHANNEL, SO
2N7002AQ-13
2N7002AQ-13
Diodes Incorporated
MOSFET N-CH 60V 180MA SOT23
STW88N65M5-4
STW88N65M5-4
STMicroelectronics
MOSFET N-CH 650V 84A TO247-4L
NTD3055-094-1
NTD3055-094-1
onsemi
MOSFET N-CH 60V 12A IPAK
STD85N3LH5
STD85N3LH5
STMicroelectronics
MOSFET N-CH 30V 80A DPAK

Related Product By Brand

BAT54CDW-13-F
BAT54CDW-13-F
Diodes Incorporated
DIODE ARRAY SCHOTTKY 30V SOT363
BAT54CW-7-F-79
BAT54CW-7-F-79
Diodes Incorporated
DIODE ARRAY SCHOTTKY 30V SOT323
BAV99T-7-G
BAV99T-7-G
Diodes Incorporated
DIODE ARRAY GP 85V 75MA SOT523
BAT54SW-7-G
BAT54SW-7-G
Diodes Incorporated
DIODE SCHOTTKY SOT323
BAT54C-7-G
BAT54C-7-G
Diodes Incorporated
DIODE SCHOTTKY SOT23
BAV21HWF-7
BAV21HWF-7
Diodes Incorporated
DIODE GP 200V 200MA SOD123F
BZX84C27Q-13-F
BZX84C27Q-13-F
Diodes Incorporated
ZENER DIODE SOT23 T&R 10K
BZX84C11W-7
BZX84C11W-7
Diodes Incorporated
DIODE ZENER 11V 200MW SOT323
BZX84C39TA
BZX84C39TA
Diodes Incorporated
DIODE ZENER 39V 350MW SOT23-3
BZX84C10-7-F-31
BZX84C10-7-F-31
Diodes Incorporated
DIODE ZENER 10V 300MW SOT23
BSS138DW-7
BSS138DW-7
Diodes Incorporated
MOSFET 2N-CH 50V 0.2A SC70-6
74LVC1G08QSE-7
74LVC1G08QSE-7
Diodes Incorporated
IC GATE AND 1CH 2-INP SOT353