BSS138Q-7-F
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Diodes Incorporated BSS138Q-7-F

Manufacturer No:
BSS138Q-7-F
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 50V 200MA SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSS138Q-7-F is an N-channel enhancement mode MOSFET produced by Diodes Incorporated. This component is designed to offer high efficiency and superior switching performance, making it ideal for various power management applications. The BSS138Q-7-F is particularly suited for the automotive industry due to its robust specifications and compliance with automotive standards.

Key Specifications

CharacteristicSymbolValueUnit
Drain-Source VoltageVDSS50V
Drain Current ContinuousID200 mA
Pulsed Drain Current (10μs Pulse Duty Cycle = 1%)IDM1 A
Gate-Source Voltage ContinuousVGSS±20 V
Gate-Source Voltage Non Repetitive, Pulse Width < 50μsVGSS±40 V
On-State ResistanceRDS(ON)3.5 Ω @ VGS = 10V, ID = 0.22A
Power DissipationPD300 mW
Thermal Resistance, Junction to AmbientRθJA417 °C/W
Operating and Storage Temperature RangeTJ, TSTG-55 to +150 °C
PackageSOT23
MountingSMD

Key Features

  • Low On-Resistance: Ensures high efficiency in power management applications.
  • Low Gate Threshold Voltage: Facilitates easy switching.
  • Low Input Capacitance: Minimizes input capacitance for faster switching speeds.
  • Fast Switching Speed: Ideal for high-frequency applications.
  • Low Input/Output Leakage: Reduces power loss and improves overall efficiency.
  • Totally Lead-Free & Fully RoHS Compliant: Meets environmental and safety standards.
  • Halogen and Antimony Free: Compliant with green device standards.
  • Automotive-Compliant: Qualified to JEDEC standards for high reliability in automotive applications.

Applications

The BSS138Q-7-F is primarily used in the automotive industry for various power management and switching applications. It is also suitable for systems/load switches, high-efficiency power management, and other applications requiring fast switching and low on-resistance.

Q & A

  1. What is the maximum drain-source voltage of the BSS138Q-7-F?
    The maximum drain-source voltage is 50V.
  2. What is the continuous drain current of the BSS138Q-7-F?
    The continuous drain current is 200 mA.
  3. What is the on-state resistance of the BSS138Q-7-F?
    The on-state resistance is 3.5 Ω at VGS = 10V and ID = 0.22A.
  4. What is the package type of the BSS138Q-7-F?
    The package type is SOT23.
  5. Is the BSS138Q-7-F RoHS compliant?
    Yes, it is fully RoHS compliant and lead-free.
  6. What are the operating and storage temperature ranges for the BSS138Q-7-F?
    The operating and storage temperature ranges are -55 to +150 °C.
  7. What is the thermal resistance, junction to ambient, of the BSS138Q-7-F?
    The thermal resistance, junction to ambient, is 417 °C/W.
  8. Is the BSS138Q-7-F suitable for automotive applications?
    Yes, it is qualified to JEDEC standards for high reliability in automotive applications.
  9. What are the key features of the BSS138Q-7-F?
    The key features include low on-resistance, low gate threshold voltage, low input capacitance, fast switching speed, and low input/output leakage.
  10. What is the power dissipation of the BSS138Q-7-F?
    The power dissipation is 300 mW.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):50 V
Current - Continuous Drain (Id) @ 25°C:200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:3.5Ohm @ 220mA, 10V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):300mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
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Same Series
BSS138Q-7-F
BSS138Q-7-F
MOSFET N-CH 50V 200MA SOT23-3

Similar Products

Part Number BSS138Q-7-F BSS138W-7-F BSS138-7-F
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 50 V 50 V 50 V
Current - Continuous Drain (Id) @ 25°C 200mA (Ta) 200mA (Ta) 200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 3.5Ohm @ 220mA, 10V 3.5Ohm @ 220mA, 10V 3.5Ohm @ 220mA, 10V
Vgs(th) (Max) @ Id 1.5V @ 250µA 1.5V @ 250µA 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - - -
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 50 pF @ 10 V 50 pF @ 10 V 50 pF @ 10 V
FET Feature - - -
Power Dissipation (Max) 300mW (Ta) 200mW (Ta) 300mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-23-3 SOT-323 SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3 SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3

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