BSS8402DW-7-F
  • Share:

Diodes Incorporated BSS8402DW-7-F

Manufacturer No:
BSS8402DW-7-F
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
MOSFET N/P-CH 60V/50V SC70-6
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSS8402DW-7-F is a dual N and P-channel enhancement mode MOSFET produced by Diodes Incorporated. This device is designed for efficient switching applications and high-speed operation, making it suitable for various electronic systems. It features a low on-resistance value and a high breakdown voltage, which are crucial for power management and motor control applications. The MOSFET is housed in a compact SOT-363 package, facilitating easy integration into space-constrained designs.

Key Specifications

AttributeValue
FET TypeDual N/P-Channel
Drain-to-Source Voltage [Vdss]60V / -50V
Drain-Source On Resistance-Max7.5Ω / 10Ω
Rated Power Dissipation200 mW
Package StyleSOT-363 (SC-70-6, SC-88)
Mounting MethodSurface Mount
Continuous Drain Current [Id]115 mA / 130 mA
Gate-Source Voltage [Vgs]-20 V to +20 V
Gate-Source Threshold Voltage [Vgs th]1 V / 800 mV
Minimum Operating Temperature-55°C
Maximum Operating Temperature+150°C

Key Features

  • Low On-Resistance: Ensures reduced power loss during operation.
  • High Breakdown Voltage: Capable of withstanding voltages up to 60V.
  • Fast Switching Speed: Optimized for high-speed switching applications.
  • Compact Package: Housed in a small SOT-363 package for easy integration into designs.
  • RoHS Compliant: Meets environmental standards for safe use in various applications.

Applications

The BSS8402DW-7-F is ideal for several applications, including:

  • Power Management: Suitable for power control circuits in various electronic applications.
  • Motor Control: Used for driving motors where efficient switching is required.
  • Signal Amplification: Employed in signal amplification circuits for enhanced performance.

It can be integrated into power supplies, motor control systems, and other electronic devices requiring reliable MOSFET performance.

Q & A

  1. What is the BSS8402DW-7-F MOSFET used for? The BSS8402DW-7-F is used for efficient switching applications, power management, and motor control.
  2. What is the maximum drain-to-source voltage of the BSS8402DW-7-F? The maximum drain-to-source voltage is 60V for the N-channel and -50V for the P-channel.
  3. What is the on-resistance of the BSS8402DW-7-F? The maximum on-resistance is 7.5Ω for the N-channel and 10Ω for the P-channel.
  4. What package style does the BSS8402DW-7-F come in? The BSS8402DW-7-F comes in the SOT-363 (SC-70-6, SC-88) package style.
  5. Is the BSS8402DW-7-F RoHS compliant? Yes, the BSS8402DW-7-F is RoHS compliant.
  6. What are the typical applications of the BSS8402DW-7-F? Typical applications include power management, motor control, and signal amplification.
  7. How do I connect the BSS8402DW-7-F in a circuit? Connect the gate to the control signal, the drain to the load, and the source to ground. Ensure proper gate drive voltage to turn the MOSFET on/off efficiently.
  8. What is the continuous drain current of the BSS8402DW-7-F? The continuous drain current is 115 mA for the N-channel and 130 mA for the P-channel.
  9. What is the gate-source threshold voltage of the BSS8402DW-7-F? The gate-source threshold voltage is 1 V for the N-channel and 800 mV for the P-channel.
  10. What are the operating temperature ranges for the BSS8402DW-7-F? The minimum operating temperature is -55°C and the maximum operating temperature is +150°C.

Product Attributes

FET Type:N and P-Channel
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):60V, 50V
Current - Continuous Drain (Id) @ 25°C:115mA, 130mA
Rds On (Max) @ Id, Vgs:7.5Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:- 
Input Capacitance (Ciss) (Max) @ Vds:50pF @ 25V
Power - Max:200mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:SOT-363
0 Remaining View Similar

In Stock

$0.54
1,094

Please send RFQ , we will respond immediately.

Same Series
BSS8402DWQ-7
BSS8402DWQ-7
MOSFET N/P-CH 60V/50V
BSS8402DW-7
BSS8402DW-7
MOSFET N/P-CH 60V/50V SC70-6

Similar Products

Part Number BSS8402DW-7-F BSS8402DW-7-G
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Obsolete
FET Type N and P-Channel N and P-Channel Complementary
FET Feature Logic Level Gate Standard
Drain to Source Voltage (Vdss) 60V, 50V 60V, 50V
Current - Continuous Drain (Id) @ 25°C 115mA, 130mA 115mA (Ta), 130mA (Ta)
Rds On (Max) @ Id, Vgs 7.5Ohm @ 50mA, 5V 13.5Ohm @ 500mA, 10V, 10Ohm @ 100mA, 5V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA, 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - -
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 25V 50pF @ 25V, 45pF @ 25V
Power - Max 200mW 200mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363
Supplier Device Package SOT-363 SOT-363

Related Product By Categories

PMDPB56XNEAX
PMDPB56XNEAX
Nexperia USA Inc.
MOSFET 2N-CH 30V 3.1A DFN2020D-6
2N7002DW
2N7002DW
onsemi
MOSFET 2N-CH 60V 0.115A SC70-6
STS4DPF20L
STS4DPF20L
STMicroelectronics
MOSFET 2P-CH 20V 4A 8SOIC
NTZD3152PT1G
NTZD3152PT1G
onsemi
MOSFET 2P-CH 20V 430MA SOT563
CSD87350Q5D
CSD87350Q5D
Texas Instruments
MOSFET 2N-CH 30V 40A 8LSON
FDMB2308PZ
FDMB2308PZ
onsemi
MOSFET 2P-CH MLP2X3
STL8DN6LF6AG
STL8DN6LF6AG
STMicroelectronics
MOSFET N-CH 60V 32A POWERFLAT
PSMN035-150B
PSMN035-150B
NXP USA Inc.
POWER FIELD-EFFECT TRANSISTOR, 5
PSMN4R8-100BSE,118
PSMN4R8-100BSE,118
Nexperia USA Inc.
N CHANNEL 100V 4.8 MOHM STANDAR
PMDPB55XP,115
PMDPB55XP,115
Nexperia USA Inc.
MOSFET 2P-CH 20V 3.4A 6HUSON
NTLJD3119CTAG
NTLJD3119CTAG
onsemi
MOSFET N/P-CH 20V 6WDFN
NVMFD5877NLWFT1G
NVMFD5877NLWFT1G
onsemi
MOSFET 2N-CH 60V 6A SO8FL

Related Product By Brand

BAS70-05Q-7-F
BAS70-05Q-7-F
Diodes Incorporated
SCHOTTKY DIODE SOT23
BAW56W-7-G
BAW56W-7-G
Diodes Incorporated
DIODE GEN PURPOSE
MURS140-13-F
MURS140-13-F
Diodes Incorporated
DIODE GEN PURP 400V 1A SMB
BZX84C24S-7-F
BZX84C24S-7-F
Diodes Incorporated
DIODE ZENER ARRAY 24V SOT363
BZX84C9V1-7
BZX84C9V1-7
Diodes Incorporated
DIODE ZENER 9.1V 350MW SOT23-3
BZX84C36-7-G
BZX84C36-7-G
Diodes Incorporated
DIODE ZENER
BZX84C18-7-F-79
BZX84C18-7-F-79
Diodes Incorporated
DIODE ZENER 18V 300MW SOT23
BC846AW-7-F
BC846AW-7-F
Diodes Incorporated
TRANS NPN 65V 0.1A SOT323
MMBT3904FZ-7B
MMBT3904FZ-7B
Diodes Incorporated
TRANS NPN 40V 0.2A 3DFN
BSS84Q-7-F
BSS84Q-7-F
Diodes Incorporated
BSS FAMILY SOT23 T&R 3K
2N7002T-7
2N7002T-7
Diodes Incorporated
MOSFET N-CH 60V 115MA SOT-523
ULN2002AD16-U
ULN2002AD16-U
Diodes Incorporated
IC PWR RELAY 7NPN 1:1 16DIP