Overview
The BSS8402DW-7-F is a dual N and P-channel enhancement mode MOSFET produced by Diodes Incorporated. This device is designed for efficient switching applications and high-speed operation, making it suitable for various electronic systems. It features a low on-resistance value and a high breakdown voltage, which are crucial for power management and motor control applications. The MOSFET is housed in a compact SOT-363 package, facilitating easy integration into space-constrained designs.
Key Specifications
Attribute | Value |
---|---|
FET Type | Dual N/P-Channel |
Drain-to-Source Voltage [Vdss] | 60V / -50V |
Drain-Source On Resistance-Max | 7.5Ω / 10Ω |
Rated Power Dissipation | 200 mW |
Package Style | SOT-363 (SC-70-6, SC-88) |
Mounting Method | Surface Mount |
Continuous Drain Current [Id] | 115 mA / 130 mA |
Gate-Source Voltage [Vgs] | -20 V to +20 V |
Gate-Source Threshold Voltage [Vgs th] | 1 V / 800 mV |
Minimum Operating Temperature | -55°C |
Maximum Operating Temperature | +150°C |
Key Features
- Low On-Resistance: Ensures reduced power loss during operation.
- High Breakdown Voltage: Capable of withstanding voltages up to 60V.
- Fast Switching Speed: Optimized for high-speed switching applications.
- Compact Package: Housed in a small SOT-363 package for easy integration into designs.
- RoHS Compliant: Meets environmental standards for safe use in various applications.
Applications
The BSS8402DW-7-F is ideal for several applications, including:
- Power Management: Suitable for power control circuits in various electronic applications.
- Motor Control: Used for driving motors where efficient switching is required.
- Signal Amplification: Employed in signal amplification circuits for enhanced performance.
It can be integrated into power supplies, motor control systems, and other electronic devices requiring reliable MOSFET performance.
Q & A
- What is the BSS8402DW-7-F MOSFET used for? The BSS8402DW-7-F is used for efficient switching applications, power management, and motor control.
- What is the maximum drain-to-source voltage of the BSS8402DW-7-F? The maximum drain-to-source voltage is 60V for the N-channel and -50V for the P-channel.
- What is the on-resistance of the BSS8402DW-7-F? The maximum on-resistance is 7.5Ω for the N-channel and 10Ω for the P-channel.
- What package style does the BSS8402DW-7-F come in? The BSS8402DW-7-F comes in the SOT-363 (SC-70-6, SC-88) package style.
- Is the BSS8402DW-7-F RoHS compliant? Yes, the BSS8402DW-7-F is RoHS compliant.
- What are the typical applications of the BSS8402DW-7-F? Typical applications include power management, motor control, and signal amplification.
- How do I connect the BSS8402DW-7-F in a circuit? Connect the gate to the control signal, the drain to the load, and the source to ground. Ensure proper gate drive voltage to turn the MOSFET on/off efficiently.
- What is the continuous drain current of the BSS8402DW-7-F? The continuous drain current is 115 mA for the N-channel and 130 mA for the P-channel.
- What is the gate-source threshold voltage of the BSS8402DW-7-F? The gate-source threshold voltage is 1 V for the N-channel and 800 mV for the P-channel.
- What are the operating temperature ranges for the BSS8402DW-7-F? The minimum operating temperature is -55°C and the maximum operating temperature is +150°C.