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2N7002KDW-AU_R1_000A1
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Panjit International Inc. 2N7002KDW-AU_R1_000A1

Manufacturer No:
2N7002KDW-AU_R1_000A1
Manufacturer:
Panjit International Inc.
Package:
Tape & Reel (TR)
Description:
60V N-CHANNEL ENHANCEMENT MODE M
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N7002KDW-AU_R1_000A1 is a 60V N-Channel Enhancement Mode MOSFET produced by Panjit International Inc. This component is designed with advanced trench process technology and features high density cell design for ultra-low on-resistance. It is ESD protected, making it suitable for a variety of applications requiring reliable and efficient switching performance.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)60V
VGS (Gate-Source Voltage)20V
ID (Continuous Drain Current)0.115A
RDS(ON) at VGS=10V, ID=500mA3Ω
RDS(ON) at VGS=4.5V, ID=200mA4Ω
PackageSOT363
ESD ProtectionYes

Key Features

  • Advanced Trench Process Technology
  • High Density Cell Design for Ultra Low On-Resistance
  • ESD Protected
  • Low On-Resistance: RDS(ON)=3Ω at VGS=10V, ID=500mA and RDS(ON)=4Ω at VGS=4.5V, ID=200mA

Applications

The 2N7002KDW-AU_R1_000A1 MOSFET is suitable for various applications including but not limited to:

  • Power Switching
  • Load Switching
  • Motor Control
  • Audio Amplifiers
  • General Purpose Switching

Q & A

  1. What is the maximum drain-source voltage (VDS) of the 2N7002KDW-AU_R1_000A1 MOSFET?
    The maximum drain-source voltage (VDS) is 60V.
  2. What is the continuous drain current (ID) of this MOSFET?
    The continuous drain current (ID) is 0.115A.
  3. What is the on-resistance (RDS(ON)) at VGS=10V and ID=500mA?
    The on-resistance (RDS(ON)) is 3Ω.
  4. Is the 2N7002KDW-AU_R1_000A1 MOSFET ESD protected?
    Yes, it is ESD protected.
  5. What package type does the 2N7002KDW-AU_R1_000A1 come in?
    The package type is SOT363.
  6. What are some common applications for this MOSFET?
    Common applications include power switching, load switching, motor control, audio amplifiers, and general purpose switching.
  7. What is the maximum gate-source voltage (VGS) for this MOSFET?
    The maximum gate-source voltage (VGS) is 20V.
  8. How does the advanced trench process technology benefit this MOSFET?
    The advanced trench process technology enhances the MOSFET's performance by reducing on-resistance and improving overall efficiency.
  9. Can this MOSFET be used in high-density applications?
    Yes, it features a high density cell design suitable for high-density applications.
  10. Where can I find detailed specifications for the 2N7002KDW-AU_R1_000A1 MOSFET?
    Detailed specifications can be found in the datasheet available on the manufacturer's website or through distributors like DigiPart.

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Standard
Drain to Source Voltage (Vdss):60V
Current - Continuous Drain (Id) @ 25°C:250mA (Ta)
Rds On (Max) @ Id, Vgs:3Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.8nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds:35pF @ 25V
Power - Max:350mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:SOT-363
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