NTHD4102PT1G
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onsemi NTHD4102PT1G

Manufacturer No:
NTHD4102PT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET 2P-CH 20V 2.9A CHIPFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTHD4102PT1G is a dual P-Channel power MOSFET produced by onsemi. This component is part of the ChipFET family and is designed for high-performance applications. It features a compact surface mount package (CASE 1206A) and is suitable for a wide range of power management and switching applications due to its robust specifications and reliable operation.

Key Specifications

ParameterValue
Channel ModeEnhancement
Voltage Rating (Vds)-20 V
Current Rating (Id)-4.1 A
On-Resistance (Rds(on))64 mOhm
Power Dissipation (Pd)1.1 W
Minimum Operating Temperature-55°C
Maximum Operating Temperature+150°C
Junction-to-Ambient Thermal Resistance (RthJA)113°C/W (steady state), 60°C/W (t=10s)
Package TypeSurface Mount, CASE 1206A

Key Features

  • Dual P-Channel configuration for versatile application in power management and switching circuits.
  • Low on-resistance (Rds(on)) of 64 mOhm, reducing power losses and improving efficiency.
  • High current rating of -4.1 A, suitable for demanding applications.
  • Compact surface mount package (CASE 1206A) for space-saving designs.
  • Wide operating temperature range from -55°C to +150°C, ensuring reliability in harsh environments.

Applications

The NTHD4102PT1G is suitable for a variety of applications, including:

  • Power management in consumer electronics and industrial devices.
  • Switching circuits in automotive and aerospace systems.
  • DC-DC converters and power supplies.
  • Motor control and drive systems.
  • General-purpose switching and amplification.

Q & A

  1. What is the voltage rating of the NTHD4102PT1G?
    The voltage rating (Vds) of the NTHD4102PT1G is -20 V.
  2. What is the current rating of the NTHD4102PT1G?
    The current rating (Id) of the NTHD4102PT1G is -4.1 A.
  3. What is the on-resistance (Rds(on)) of the NTHD4102PT1G?
    The on-resistance (Rds(on)) of the NTHD4102PT1G is 64 mOhm.
  4. What is the power dissipation (Pd) of the NTHD4102PT1G?
    The power dissipation (Pd) of the NTHD4102PT1G is 1.1 W.
  5. What is the operating temperature range of the NTHD4102PT1G?
    The operating temperature range of the NTHD4102PT1G is from -55°C to +150°C.
  6. What package type does the NTHD4102PT1G use?
    The NTHD4102PT1G uses a surface mount package (CASE 1206A).
  7. What are some common applications of the NTHD4102PT1G?
    The NTHD4102PT1G is commonly used in power management, switching circuits, DC-DC converters, motor control, and general-purpose switching and amplification.
  8. What is the junction-to-ambient thermal resistance of the NTHD4102PT1G?
    The junction-to-ambient thermal resistance (RthJA) of the NTHD4102PT1G is 113°C/W (steady state) and 60°C/W (t=10s).
  9. Is the NTHD4102PT1G suitable for high-temperature environments?
    Yes, the NTHD4102PT1G is suitable for high-temperature environments with an operating temperature range up to +150°C.
  10. Where can I find detailed specifications for the NTHD4102PT1G?
    Detailed specifications for the NTHD4102PT1G can be found in the datasheet available on the onsemi website or through distributors like Mouser Electronics and Octopart.

Product Attributes

FET Type:2 P-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):20V
Current - Continuous Drain (Id) @ 25°C:2.9A
Rds On (Max) @ Id, Vgs:80mOhm @ 2.9A, 4.5V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:8.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:750pF @ 16V
Power - Max:1.1W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SMD, Flat Lead
Supplier Device Package:ChipFET™
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Similar Products

Part Number NTHD4102PT1G NTHD4102PT3G NTHD2102PT1G
Manufacturer onsemi onsemi onsemi
Product Status Active Obsolete Obsolete
FET Type 2 P-Channel (Dual) 2 P-Channel (Dual) 2 P-Channel (Dual)
FET Feature Logic Level Gate Logic Level Gate Logic Level Gate
Drain to Source Voltage (Vdss) 20V 20V 8V
Current - Continuous Drain (Id) @ 25°C 2.9A 2.9A 3.4A
Rds On (Max) @ Id, Vgs 80mOhm @ 2.9A, 4.5V 80mOhm @ 2.9A, 4.5V 58mOhm @ 3.4A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA 1.5V @ 250µA 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8.6nC @ 4.5V 8.6nC @ 4.5V 16nC @ 2.5V
Input Capacitance (Ciss) (Max) @ Vds 750pF @ 16V 750pF @ 16V 715pF @ 6.4V
Power - Max 1.1W 1.1W 1.1W
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case 8-SMD, Flat Lead 8-SMD, Flat Lead 8-SMD, Flat Lead
Supplier Device Package ChipFET™ ChipFET™ ChipFET™

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