Overview
The FDPC8016S is a dual N-Channel MOSFET device produced by onsemi, designed for high-efficiency power management applications. This device integrates two specialized MOSFETs in a single package, optimized for synchronous buck converters. The control MOSFET (Q1) and the synchronous SyncFET (Q2) are engineered to provide optimal power efficiency and ease of use in circuit design.
Key Specifications
Parameter | Q1 (Control MOSFET) | Q2 (SyncFET) | Unit |
---|---|---|---|
Drain to Source Voltage (VDS) | 25 | 25 | V |
Gate to Source Voltage (VGS) | ±12 | ±12 | V |
Drain Current (ID) | 20 A (Continuous, TC = 25°C) 35 A (Pulsed, TA = 25°C) | 75 A (Continuous, TA = 25°C) 140 A (Pulsed, TA = 25°C) | A |
On-Resistance (RDS(on)) at VGS = 10 V, ID = 20 A | 3.8 mΩ | 1.4 mΩ | mΩ |
On-Resistance (RDS(on)) at VGS = 4.5 V, ID = 18 A | 4.7 mΩ | 1.7 mΩ | mΩ |
Thermal Resistance, Junction to Case (RθJC) | 6.0 °C/W | 3.0 °C/W | °C/W |
Operating and Storage Junction Temperature Range | -55 to +150 | -55 to +150 | °C |
Key Features
- Dual N-Channel MOSFETs in a single package, optimized for synchronous buck converters.
- Low inductance packaging to shorten rise/fall times and reduce switching losses.
- MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing.
- Pb-free and RoHS compliant.
- Embedded Schottky diode in parallel with PowerTrench MOSFET for improved performance.
Applications
- Computing
- Communications
- General Purpose Point of Load
Q & A
- What is the FDPC8016S?
The FDPC8016S is a dual N-Channel MOSFET device designed for high-efficiency power management applications, particularly in synchronous buck converters.
- What are the key specifications of the FDPC8016S?
The device features a maximum drain to source voltage of 25 V, gate to source voltage of ±12 V, and on-resistance as low as 3.8 mΩ for Q1 and 1.4 mΩ for Q2.
- What are the thermal characteristics of the FDPC8016S?
The thermal resistance from junction to case is 6.0 °C/W for Q1 and 3.0 °C/W for Q2. The operating and storage junction temperature range is -55 to +150 °C.
- What are the applications of the FDPC8016S?
The FDPC8016S is used in computing, communications, and general purpose point of load applications.
- Is the FDPC8016S Pb-free and RoHS compliant?
- What is the package type of the FDPC8016S?
The FDPC8016S is packaged in a PQFN8 5.00x6.00x0.75, 1.27P (Power Clip 56) package.
- How does the FDPC8016S reduce switching losses?
The FDPC8016S reduces switching losses through its low inductance packaging, which shortens rise/fall times.
- Does the FDPC8016S include any integrated diodes?
- What is the maximum continuous drain current for Q1 and Q2?
The maximum continuous drain current is 20 A for Q1 and 75 A for Q2 at TA = 25°C.
- How does the FDPC8016S improve circuit layout?
The FDPC8016S improves circuit layout by enabling optimum layout for lower circuit inductance and reduced switch node ringing.