FDPC8016S
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onsemi FDPC8016S

Manufacturer No:
FDPC8016S
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET 2N-CH 25V 8PWRCLIP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDPC8016S is a dual N-Channel MOSFET device produced by onsemi, designed for high-efficiency power management applications. This device integrates two specialized MOSFETs in a single package, optimized for synchronous buck converters. The control MOSFET (Q1) and the synchronous SyncFET (Q2) are engineered to provide optimal power efficiency and ease of use in circuit design.

Key Specifications

Parameter Q1 (Control MOSFET) Q2 (SyncFET) Unit
Drain to Source Voltage (VDS) 25 25 V
Gate to Source Voltage (VGS) ±12 ±12 V
Drain Current (ID) 20 A (Continuous, TC = 25°C)
35 A (Pulsed, TA = 25°C)
75 A (Continuous, TA = 25°C)
140 A (Pulsed, TA = 25°C)
A
On-Resistance (RDS(on)) at VGS = 10 V, ID = 20 A 3.8 mΩ 1.4 mΩ
On-Resistance (RDS(on)) at VGS = 4.5 V, ID = 18 A 4.7 mΩ 1.7 mΩ
Thermal Resistance, Junction to Case (RθJC) 6.0 °C/W 3.0 °C/W °C/W
Operating and Storage Junction Temperature Range -55 to +150 -55 to +150 °C

Key Features

  • Dual N-Channel MOSFETs in a single package, optimized for synchronous buck converters.
  • Low inductance packaging to shorten rise/fall times and reduce switching losses.
  • MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing.
  • Pb-free and RoHS compliant.
  • Embedded Schottky diode in parallel with PowerTrench MOSFET for improved performance.

Applications

  • Computing
  • Communications
  • General Purpose Point of Load

Q & A

  1. What is the FDPC8016S?

    The FDPC8016S is a dual N-Channel MOSFET device designed for high-efficiency power management applications, particularly in synchronous buck converters.

  2. What are the key specifications of the FDPC8016S?

    The device features a maximum drain to source voltage of 25 V, gate to source voltage of ±12 V, and on-resistance as low as 3.8 mΩ for Q1 and 1.4 mΩ for Q2.

  3. What are the thermal characteristics of the FDPC8016S?

    The thermal resistance from junction to case is 6.0 °C/W for Q1 and 3.0 °C/W for Q2. The operating and storage junction temperature range is -55 to +150 °C.

  4. What are the applications of the FDPC8016S?

    The FDPC8016S is used in computing, communications, and general purpose point of load applications.

  5. Is the FDPC8016S Pb-free and RoHS compliant?
  6. What is the package type of the FDPC8016S?

    The FDPC8016S is packaged in a PQFN8 5.00x6.00x0.75, 1.27P (Power Clip 56) package.

  7. How does the FDPC8016S reduce switching losses?

    The FDPC8016S reduces switching losses through its low inductance packaging, which shortens rise/fall times.

  8. Does the FDPC8016S include any integrated diodes?
  9. What is the maximum continuous drain current for Q1 and Q2?

    The maximum continuous drain current is 20 A for Q1 and 75 A for Q2 at TA = 25°C.

  10. How does the FDPC8016S improve circuit layout?

    The FDPC8016S improves circuit layout by enabling optimum layout for lower circuit inductance and reduced switch node ringing.

Product Attributes

FET Type:2 N-Channel (Dual) Asymmetrical
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):25V
Current - Continuous Drain (Id) @ 25°C:20A, 35A
Rds On (Max) @ Id, Vgs:3.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:35nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:2375pF @ 13V
Power - Max:2.1W, 2.3W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-PowerWDFN
Supplier Device Package:Power Clip 56
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Similar Products

Part Number FDPC8016S FDPC8012S FDPC8013S FDPC8014S
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Active Active Active
FET Type 2 N-Channel (Dual) Asymmetrical 2 N-Channel (Dual) Asymmetrical 2 N-Channel (Dual) 2 N-Channel (Dual) Asymmetrical
FET Feature Logic Level Gate Logic Level Gate Logic Level Gate Logic Level Gate
Drain to Source Voltage (Vdss) 25V 25V 30V 25V
Current - Continuous Drain (Id) @ 25°C 20A, 35A 13A, 26A 13A, 26A 20A, 41A
Rds On (Max) @ Id, Vgs 3.8mOhm @ 20A, 10V 7mOhm @ 12A, 4.5V 6.4mOhm @ 13A, 10V 3.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.2V @ 250µA 3V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V 8nC @ 4.5V 13nC @ 10V 35nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 2375pF @ 13V 1075pF @ 13V 827pF @ 15V 2375pF @ 13V
Power - Max 2.1W, 2.3W 800mW, 900mW 800mW, 900mW 2.1W, 2.3W
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case 8-PowerWDFN 8-PowerWDFN 8-PowerWDFN 8-PowerWDFN
Supplier Device Package Power Clip 56 Powerclip-33 Powerclip-33 Power Clip 56

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