NVMFD5C466NLWFT1G
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onsemi NVMFD5C466NLWFT1G

Manufacturer No:
NVMFD5C466NLWFT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET 2N-CH 40V 52A S08FL
Delivery:
Payment:
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Product Introduction

Overview

The NVMFD5C466NLWFT1G is a dual N-channel power MOSFET produced by onsemi. This device is designed for high-performance applications requiring low on-resistance and high current handling. The MOSFET features a small footprint of 5x6 mm, making it ideal for compact designs. It is AEC-Q101 qualified and PPAP capable, ensuring reliability and compliance with automotive standards. The device is also Pb-free and RoHS compliant, aligning with environmental regulations.

Key Specifications

Parameter Symbol Value Unit
Drain-to-Source Voltage VDSS 40 V
Gate-to-Source Voltage VGS ±20 V
Continuous Drain Current (TJ = 25°C) ID 52 A
Continuous Drain Current (TJ = 100°C) ID 37 A
Power Dissipation (TJ = 25°C) PD 38 W
Power Dissipation (TJ = 100°C) PD 19 W
Pulsed Drain Current (tp = 10 μs) IDM 198 A
Operating Junction and Storage Temperature Range TJ, Tstg −55 to +175 °C
Source Current (Body Diode) IS 31.3 A
Single Pulse Drain-to-Source Avalanche Energy EAS 72 mJ
Lead Temperature for Soldering Purposes TL 260 °C
On-Resistance (VGS = 10 V, ID = 10 A) RDS(on) 7.4 mΩ
Gate Threshold Voltage VGS(TH) 1.2 to 2.2 V

Key Features

  • Small Footprint: The device has a compact 5x6 mm DFN8 package, ideal for space-constrained designs.
  • Low RDS(on): The MOSFET features a low on-resistance of 7.4 mΩ at VGS = 10 V and ID = 10 A, minimizing conduction losses.
  • Low QG and Capacitance: Low total gate charge and capacitance reduce driver losses and improve switching efficiency.
  • Wettable Flank Option: The NVMFD5C466NLWFT1G includes a wettable flank option for enhanced optical inspection.
  • AEC-Q101 Qualified and PPAP Capable: Ensures reliability and compliance with automotive standards.
  • Pb-Free and RoHS Compliant: Aligns with environmental regulations.

Applications

  • Automotive Systems: Suitable for various automotive applications due to its AEC-Q101 qualification and PPAP capability.
  • Power Management: Ideal for power management in high-current, low-voltage applications such as DC-DC converters and power supplies.
  • Motor Control: Used in motor control circuits where high efficiency and low on-resistance are critical.
  • Industrial and Consumer Electronics: Applicable in a wide range of industrial and consumer electronic devices requiring high-performance power switching.

Q & A

  1. What is the maximum drain-to-source voltage of the NVMFD5C466NLWFT1G?

    The maximum drain-to-source voltage (VDSS) is 40 V.

  2. What is the continuous drain current at TJ = 25°C?

    The continuous drain current (ID) at TJ = 25°C is 52 A.

  3. What is the on-resistance of the MOSFET at VGS = 10 V and ID = 10 A?

    The on-resistance (RDS(on)) is 7.4 mΩ at VGS = 10 V and ID = 10 A.

  4. Is the NVMFD5C466NLWFT1G AEC-Q101 qualified?

    Yes, the device is AEC-Q101 qualified and PPAP capable.

  5. What is the operating junction and storage temperature range?

    The operating junction and storage temperature range is −55 to +175°C.

  6. What is the lead temperature for soldering purposes?

    The lead temperature for soldering purposes is 260°C.

  7. Is the device Pb-free and RoHS compliant?

    Yes, the device is Pb-free and RoHS compliant.

  8. What is the typical gate threshold voltage?

    The typical gate threshold voltage (VGS(TH)) is between 1.2 and 2.2 V.

  9. What is the maximum pulsed drain current?

    The maximum pulsed drain current (IDM) is 198 A for a pulse width of 10 μs.

  10. What is the single pulse drain-to-source avalanche energy?

    The single pulse drain-to-source avalanche energy (EAS) is 72 mJ.

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Standard
Drain to Source Voltage (Vdss):40V
Current - Continuous Drain (Id) @ 25°C:14A (Ta), 52A (Tc)
Rds On (Max) @ Id, Vgs:7.4mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:2.2V @ 30µA
Gate Charge (Qg) (Max) @ Vgs:7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:997pF @ 25V
Power - Max:3W (Ta), 40W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-PowerTDFN
Supplier Device Package:8-DFN (5x6) Dual Flag (SO8FL-Dual)
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Same Series
NVMFD5C466NLT1G
NVMFD5C466NLT1G
MOSFET 2N-CH 40V 52A S08FL

Similar Products

Part Number NVMFD5C466NLWFT1G NVMFD5C466NWFT1G NVMFD5C446NLWFT1G NVMFD5C462NLWFT1G
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Active Active Active
FET Type 2 N-Channel (Dual) 2 N-Channel (Dual) 2 N-Channel (Dual) 2 N-Channel (Dual)
FET Feature Standard Standard Standard Standard
Drain to Source Voltage (Vdss) 40V 40V 40V 40V
Current - Continuous Drain (Id) @ 25°C 14A (Ta), 52A (Tc) 14A (Ta), 49A (Tc) 25A (Ta), 145A (Tc) 18A (Ta), 84A (Tc)
Rds On (Max) @ Id, Vgs 7.4mOhm @ 10A, 10V 8.1mOhm @ 15A, 10V 2.65mOhm @ 20A, 10V 4.7mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.2V @ 30µA 3.5V @ 250µA 2.2V @ 90µA 2.2V @ 40µA
Gate Charge (Qg) (Max) @ Vgs 7nC @ 4.5V 11nC @ 10V 25nC @ 4.5V 11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 997pF @ 25V 650pF @ 25V 3170pF @ 25V 1300pF @ 25V
Power - Max 3W (Ta), 40W (Tc) 3W (Ta), 38W (Tc) 3.5W (Ta) 3W (Ta), 50W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN
Supplier Device Package 8-DFN (5x6) Dual Flag (SO8FL-Dual) 8-DFN (5x6) Dual Flag (SO8FL-Dual) 8-DFN (5x6) Dual Flag (SO8FL-Dual) 8-DFN (5x6) Dual Flag (SO8FL-Dual)

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