Overview
The NVMFD5C466NLWFT1G is a dual N-channel power MOSFET produced by onsemi. This device is designed for high-performance applications requiring low on-resistance and high current handling. The MOSFET features a small footprint of 5x6 mm, making it ideal for compact designs. It is AEC-Q101 qualified and PPAP capable, ensuring reliability and compliance with automotive standards. The device is also Pb-free and RoHS compliant, aligning with environmental regulations.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 40 | V |
| Gate-to-Source Voltage | VGS | ±20 | V |
| Continuous Drain Current (TJ = 25°C) | ID | 52 | A |
| Continuous Drain Current (TJ = 100°C) | ID | 37 | A |
| Power Dissipation (TJ = 25°C) | PD | 38 | W |
| Power Dissipation (TJ = 100°C) | PD | 19 | W |
| Pulsed Drain Current (tp = 10 μs) | IDM | 198 | A |
| Operating Junction and Storage Temperature Range | TJ, Tstg | −55 to +175 | °C |
| Source Current (Body Diode) | IS | 31.3 | A |
| Single Pulse Drain-to-Source Avalanche Energy | EAS | 72 | mJ |
| Lead Temperature for Soldering Purposes | TL | 260 | °C |
| On-Resistance (VGS = 10 V, ID = 10 A) | RDS(on) | 7.4 mΩ | mΩ |
| Gate Threshold Voltage | VGS(TH) | 1.2 to 2.2 | V |
Key Features
- Small Footprint: The device has a compact 5x6 mm DFN8 package, ideal for space-constrained designs.
- Low RDS(on): The MOSFET features a low on-resistance of 7.4 mΩ at VGS = 10 V and ID = 10 A, minimizing conduction losses.
- Low QG and Capacitance: Low total gate charge and capacitance reduce driver losses and improve switching efficiency.
- Wettable Flank Option: The NVMFD5C466NLWFT1G includes a wettable flank option for enhanced optical inspection.
- AEC-Q101 Qualified and PPAP Capable: Ensures reliability and compliance with automotive standards.
- Pb-Free and RoHS Compliant: Aligns with environmental regulations.
Applications
- Automotive Systems: Suitable for various automotive applications due to its AEC-Q101 qualification and PPAP capability.
- Power Management: Ideal for power management in high-current, low-voltage applications such as DC-DC converters and power supplies.
- Motor Control: Used in motor control circuits where high efficiency and low on-resistance are critical.
- Industrial and Consumer Electronics: Applicable in a wide range of industrial and consumer electronic devices requiring high-performance power switching.
Q & A
- What is the maximum drain-to-source voltage of the NVMFD5C466NLWFT1G?
The maximum drain-to-source voltage (VDSS) is 40 V.
- What is the continuous drain current at TJ = 25°C?
The continuous drain current (ID) at TJ = 25°C is 52 A.
- What is the on-resistance of the MOSFET at VGS = 10 V and ID = 10 A?
The on-resistance (RDS(on)) is 7.4 mΩ at VGS = 10 V and ID = 10 A.
- Is the NVMFD5C466NLWFT1G AEC-Q101 qualified?
Yes, the device is AEC-Q101 qualified and PPAP capable.
- What is the operating junction and storage temperature range?
The operating junction and storage temperature range is −55 to +175°C.
- What is the lead temperature for soldering purposes?
The lead temperature for soldering purposes is 260°C.
- Is the device Pb-free and RoHS compliant?
Yes, the device is Pb-free and RoHS compliant.
- What is the typical gate threshold voltage?
The typical gate threshold voltage (VGS(TH)) is between 1.2 and 2.2 V.
- What is the maximum pulsed drain current?
The maximum pulsed drain current (IDM) is 198 A for a pulse width of 10 μs.
- What is the single pulse drain-to-source avalanche energy?
The single pulse drain-to-source avalanche energy (EAS) is 72 mJ.
