Overview
The FDG6320C is a dual N & P-Channel logic level enhancement mode field effect transistor produced by ON Semiconductor. It is designed using a proprietary, high cell density, DMOS technology to minimize on-state resistance. This device is particularly suited for low voltage applications, serving as a replacement for bipolar digital transistors and small signal MOSFETS. The absence of bias resistors allows it to replace multiple digital transistors with different bias resistor values, making it versatile for various applications.
Key Specifications
| Parameter | N-Channel | P-Channel | Units |
|---|---|---|---|
| Drain-Source Voltage (VDSS) | 25 | -25 | V |
| Gate-Source Voltage (VGSS) | 8 | -8 | V |
| Continuous Drain Current (ID) | 0.22 | -0.14 | A |
| Pulsed Drain Current (ID) | 0.65 | -0.4 | A |
| Maximum Power Dissipation (PD) | 0.3 | 0.3 | W |
| Operating and Storage Temperature Range (TJ, TSTG) | -55 to 150 | -55 to 150 | °C |
| Electrostatic Discharge Rating (ESD) | 6 kV | 6 kV | Human Body Model |
| On-State Drain Current (ID(ON)) | 0.22 A @ VGS = 4.5 V, VDS = 5 V | -0.14 A @ VGS = -4.5 V, VDS = -5 V | A |
| On-State Resistance (RDS(ON)) | 4.0 Ω @ VGS = 4.5 V, 5.0 Ω @ VGS = 2.7 V | 10 Ω @ VGS = -4.5 V, 13 Ω @ VGS = -2.7 V | Ω |
| Thermal Resistance, Junction-to-Ambient (RθJA) | 415 °C/W | 415 °C/W | °C/W |
Key Features
- Very low on-state resistance: RDS(ON) = 4.0 Ω @ VGS = 4.5 V for N-Channel, RDS(ON) = 10 Ω @ VGS = -4.5 V for P-Channel.
- Very small package outline: SC70-6.
- Very low level gate drive requirements: Allows direct operation in 3 V circuits with VGS(th) < 1.5 V.
- Gate-Source Zener for ESD ruggedness: >6 kV Human Body Model.
- Pb-Free and RoHS compliant.
Applications
The FDG6320C is suitable for a wide range of low voltage applications, including:
- Replacement for bipolar digital transistors and small signal MOSFETS.
- Low voltage digital circuits.
- General purpose switching applications.
- Any application requiring dual N & P-Channel logic level enhancement mode FETs with low on-state resistance and small package size).
Q & A
- What is the FDG6320C used for? The FDG6320C is used as a replacement for bipolar digital transistors and small signal MOSFETS in low voltage applications).
- What are the key features of the FDG6320C? Key features include very low on-state resistance, very small package outline, low level gate drive requirements, and ESD ruggedness).
- What is the maximum drain current for the N-Channel and P-Channel? The maximum continuous drain current is 0.22 A for N-Channel and -0.14 A for P-Channel).
- What is the thermal resistance of the FDG6320C? The thermal resistance, junction-to-ambient (RθJA), is 415 °C/W).
- Is the FDG6320C Pb-Free and RoHS compliant? Yes, the FDG6320C is Pb-Free and RoHS compliant).
- What is the operating and storage temperature range for the FDG6320C? The operating and storage temperature range is -55 to 150 °C).
- What is the ESD rating of the FDG6320C? The ESD rating is 6 kV according to the Human Body Model).
- What package type is the FDG6320C available in? The FDG6320C is available in the SC70-6 package).
- Can the FDG6320C operate in 3 V circuits? Yes, the FDG6320C can operate in 3 V circuits due to its low level gate drive requirements).
- What are the typical on-state resistances for the N and P channels at different gate-source voltages? For N-Channel: RDS(ON) = 4.0 Ω @ VGS = 4.5 V, RDS(ON) = 5.0 Ω @ VGS = 2.7 V. For P-Channel: RDS(ON) = 10 Ω @ VGS = -4.5 V, RDS(ON) = 13 Ω @ VGS = -2.7 V).
