Overview
The NVMD6N04R2G is a dual N-channel power MOSFET produced by onsemi. This component is housed in an SOIC-8 package and is designed for high-performance applications requiring low on-resistance and high current handling. The MOSFET is lead-free and compliant with RoHS standards, making it suitable for a wide range of modern electronic systems.
Key Specifications
Parameter | Value |
---|---|
VDS (Drain-Source Voltage) | 40 V |
ID (Continuous Drain Current) | 4.6 A |
RDS(ON) (On-Resistance) | Typically 6.5 mΩ at VGS = 10 V |
VGS(th) (Threshold Voltage) | Typically 1.5 V |
PD (Power Dissipation) | 2.5 W |
Package | SOIC-8 |
Operating Temperature Range | -55°C to 150°C |
Key Features
- Low On-Resistance: The NVMD6N04R2G features a low RDS(ON) of typically 6.5 mΩ at VGS = 10 V, which reduces power losses and improves efficiency.
- High Current Handling: With a continuous drain current of 4.6 A, this MOSFET is suitable for applications requiring high current flow.
- Dual N-Channel Configuration: The dual N-channel configuration allows for more flexible circuit design and improved performance in various applications.
- Lead-Free and RoHS Compliant: The component is lead-free and compliant with RoHS standards, making it environmentally friendly and suitable for modern electronic systems.
Applications
The NVMD6N04R2G is versatile and can be used in a variety of applications, including:
- Power Management Systems: Suitable for power supplies, DC-DC converters, and other power management circuits.
- Motor Control: Used in motor drive circuits due to its high current handling and low on-resistance.
- Switching Circuits: Ideal for high-frequency switching applications such as audio amplifiers and other high-power switching circuits.
- Automotive Systems: Can be used in automotive electronics due to its robust performance and wide operating temperature range.
Q & A
- What is the maximum drain-source voltage of the NVMD6N04R2G?
The maximum drain-source voltage (VDS) is 40 V. - What is the continuous drain current rating of the NVMD6N04R2G?
The continuous drain current (ID) is 4.6 A. - What is the typical on-resistance of the NVMD6N04R2G?
The typical on-resistance (RDS(ON)) is 6.5 mΩ at VGS = 10 V. - What is the package type of the NVMD6N04R2G?
The package type is SOIC-8. - Is the NVMD6N04R2G lead-free and RoHS compliant?
Yes, the NVMD6N04R2G is lead-free and RoHS compliant. - What is the operating temperature range of the NVMD6N04R2G?
The operating temperature range is -55°C to 150°C. - What are some common applications of the NVMD6N04R2G?
Common applications include power management systems, motor control, switching circuits, and automotive systems. - What is the threshold voltage of the NVMD6N04R2G?
The threshold voltage (VGS(th)) is typically 1.5 V. - What is the power dissipation rating of the NVMD6N04R2G?
The power dissipation (PD) is 2.5 W. - Where can I find detailed specifications for the NVMD6N04R2G?
Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Mouser Electronics.