FDG6301N-F085
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onsemi FDG6301N-F085

Manufacturer No:
FDG6301N-F085
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET 2N-CH 25V 0.22A SC70-6
Delivery:
Payment:
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Product Introduction

Overview

The FDG6301N-F085 is a dual N-Channel digital FET produced by onsemi. This device is designed using onsemi’s proprietary high cell density DMOS technology, which minimizes on-state resistance. It is particularly suited for low voltage applications, serving as a replacement for bipolar digital transistors and small signal MOSFETs. The FDG6301N-F085 is packaged in a compact industry standard SC70-6 surface mount package, making it ideal for space-constrained designs.

Key Specifications

Parameter Symbol Min Typ Max Units
Drain to Source Voltage VDSS - - 25 V
Gate to Source Voltage VGS - - 8 V
Drain Current Continuous ID - - 0.22 A
Drain Current Pulsed ID - - 0.65 A
Power Dissipation PD - - 0.3 W
Operating and Storage Temperature TJ, TSTG -55 - 150 °C
Electrostatic Discharge Rating ESD - - 6.0 kV
Thermal Resistance, Junction to Ambient RθJA - - 415 °C/W
Gate to Source Threshold Voltage VGS(th) 0.65 0.85 1.5 V
Drain to Source On Resistance @ VGS = 4.5 V RDS(ON) 2.6 4 - Ω
Drain to Source On Resistance @ VGS = 2.7 V RDS(ON) 3.7 5 - Ω

Key Features

  • 25 V, 0.22 A continuous, 0.65 A peak current capability
  • Low on-state resistance: RDS(ON) = 4 Ω @ VGS = 4.5 V, RDS(ON) = 5 Ω @ VGS = 2.7 V
  • Very low level gate drive requirements allowing direct operation in 3 V circuits (VGS(th) < 1.5 V)
  • Gate-Source Zener for ESD ruggedness (>6 kV Human Body Model)
  • Compact industry standard SC70-6 surface mount package
  • AEC-Q101 qualified and PPAP capable
  • Pb-Free, Halogen Free/BFR Free, and RoHS compliant

Applications

The FDG6301N-F085 is designed for low voltage applications and can be used as a replacement for bipolar digital transistors and small signal MOSFETs. It is suitable for various applications where low on-state resistance and high ESD ruggedness are required.

Q & A

  1. What is the maximum drain to source voltage for the FDG6301N-F085?

    The maximum drain to source voltage (VDSS) is 25 V.

  2. What are the continuous and pulsed drain current ratings?

    The continuous drain current (ID) is 0.22 A, and the pulsed drain current is 0.65 A.

  3. What is the gate to source threshold voltage range?

    The gate to source threshold voltage (VGS(th)) range is from 0.65 V to 1.5 V.

  4. What is the on-state resistance at VGS = 4.5 V and VGS = 2.7 V?

    The on-state resistance (RDS(ON)) is 4 Ω at VGS = 4.5 V and 5 Ω at VGS = 2.7 V.

  5. What is the ESD rating for the FDG6301N-F085?

    The ESD rating is >6 kV according to the Human Body Model.

  6. What is the thermal resistance from junction to ambient?

    The thermal resistance from junction to ambient (RθJA) is 415 °C/W.

  7. Is the FDG6301N-F085 RoHS compliant?

    Yes, the device is Pb-Free, Halogen Free/BFR Free, and RoHS compliant.

  8. What package type is used for the FDG6301N-F085?

    The device is packaged in a compact industry standard SC70-6 surface mount package.

  9. What are the operating and storage temperature ranges?

    The operating and storage temperature range is from -55°C to 150°C.

  10. Is the FDG6301N-F085 AEC-Q101 qualified?

    Yes, the device is AEC-Q101 qualified and PPAP capable.

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):25V
Current - Continuous Drain (Id) @ 25°C:220mA
Rds On (Max) @ Id, Vgs:4Ohm @ 220mA, 4.5V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:9.5pF @ 10V
Power - Max:300mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:SC-88 (SC-70-6)
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Similar Products

Part Number FDG6301N-F085 FDG6301N-F085P
Manufacturer onsemi onsemi
Product Status Obsolete Obsolete
FET Type 2 N-Channel (Dual) 2 N-Channel (Dual)
FET Feature Logic Level Gate Logic Level Gate
Drain to Source Voltage (Vdss) 25V 25V
Current - Continuous Drain (Id) @ 25°C 220mA 220mA (Ta)
Rds On (Max) @ Id, Vgs 4Ohm @ 220mA, 4.5V 4Ohm @ 220mA, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.4nC @ 4.5V 0.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 9.5pF @ 10V 9.5pF @ 10V
Power - Max 300mW 300mW
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363
Supplier Device Package SC-88 (SC-70-6) SC-70-6

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