Overview
The FDG6301N-F085 is a dual N-Channel digital FET produced by onsemi. This device is designed using onsemi’s proprietary high cell density DMOS technology, which minimizes on-state resistance. It is particularly suited for low voltage applications, serving as a replacement for bipolar digital transistors and small signal MOSFETs. The FDG6301N-F085 is packaged in a compact industry standard SC70-6 surface mount package, making it ideal for space-constrained designs.
Key Specifications
| Parameter | Symbol | Min | Typ | Max | Units |
|---|---|---|---|---|---|
| Drain to Source Voltage | VDSS | - | - | 25 | V |
| Gate to Source Voltage | VGS | - | - | 8 | V |
| Drain Current Continuous | ID | - | - | 0.22 | A |
| Drain Current Pulsed | ID | - | - | 0.65 | A |
| Power Dissipation | PD | - | - | 0.3 | W |
| Operating and Storage Temperature | TJ, TSTG | -55 | - | 150 | °C |
| Electrostatic Discharge Rating | ESD | - | - | 6.0 | kV |
| Thermal Resistance, Junction to Ambient | RθJA | - | - | 415 | °C/W |
| Gate to Source Threshold Voltage | VGS(th) | 0.65 | 0.85 | 1.5 | V |
| Drain to Source On Resistance @ VGS = 4.5 V | RDS(ON) | 2.6 | 4 | - | Ω |
| Drain to Source On Resistance @ VGS = 2.7 V | RDS(ON) | 3.7 | 5 | - | Ω |
Key Features
- 25 V, 0.22 A continuous, 0.65 A peak current capability
- Low on-state resistance: RDS(ON) = 4 Ω @ VGS = 4.5 V, RDS(ON) = 5 Ω @ VGS = 2.7 V
- Very low level gate drive requirements allowing direct operation in 3 V circuits (VGS(th) < 1.5 V)
- Gate-Source Zener for ESD ruggedness (>6 kV Human Body Model)
- Compact industry standard SC70-6 surface mount package
- AEC-Q101 qualified and PPAP capable
- Pb-Free, Halogen Free/BFR Free, and RoHS compliant
Applications
The FDG6301N-F085 is designed for low voltage applications and can be used as a replacement for bipolar digital transistors and small signal MOSFETs. It is suitable for various applications where low on-state resistance and high ESD ruggedness are required.
Q & A
- What is the maximum drain to source voltage for the FDG6301N-F085?
The maximum drain to source voltage (VDSS) is 25 V.
- What are the continuous and pulsed drain current ratings?
The continuous drain current (ID) is 0.22 A, and the pulsed drain current is 0.65 A.
- What is the gate to source threshold voltage range?
The gate to source threshold voltage (VGS(th)) range is from 0.65 V to 1.5 V.
- What is the on-state resistance at VGS = 4.5 V and VGS = 2.7 V?
The on-state resistance (RDS(ON)) is 4 Ω at VGS = 4.5 V and 5 Ω at VGS = 2.7 V.
- What is the ESD rating for the FDG6301N-F085?
The ESD rating is >6 kV according to the Human Body Model.
- What is the thermal resistance from junction to ambient?
The thermal resistance from junction to ambient (RθJA) is 415 °C/W.
- Is the FDG6301N-F085 RoHS compliant?
Yes, the device is Pb-Free, Halogen Free/BFR Free, and RoHS compliant.
- What package type is used for the FDG6301N-F085?
The device is packaged in a compact industry standard SC70-6 surface mount package.
- What are the operating and storage temperature ranges?
The operating and storage temperature range is from -55°C to 150°C.
- Is the FDG6301N-F085 AEC-Q101 qualified?
Yes, the device is AEC-Q101 qualified and PPAP capable.
