PSMN035-150B
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NXP USA Inc. PSMN035-150B

Manufacturer No:
PSMN035-150B
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
POWER FIELD-EFFECT TRANSISTOR, 5
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PSMN035-150B is a SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) produced by NXP USA Inc. This transistor utilizes TrenchMOS technology and is packaged in a plastic D2PAK (SOT404) package. It is designed and qualified for use in various applications including computing, communications, consumer, and industrial sectors.

Key Specifications

ParameterValue
Type numberPSMN035-150B
Package versionSOT404 (D2PAK)
Channel typeN-channel
Number of transistors1
VDS [max] (V)150
RDSon [max] @ VGS = 10 V (mΩ)35
Tj [max] (°C)175
ID [max] (A)50
QGD [typ] (nC)33
QG(tot) [typ] @ VGS = 10 V (nC)79
Ptot [max] (W)250
Qr [typ] (nC)0.66
VGSth [typ] (V)3
Automotive qualifiedNo
Ciss [typ] (pF)4720
Coss [typ] (pF)456
Release date2010-11-13

Key Features

  • Low conduction losses due to low on-state resistance (RDSon [max] = 35 mΩ @ VGS = 10 V)
  • Suitable for high frequency applications due to fast switching characteristics

Applications

  • Switched-mode power supplies
  • Computing applications
  • Communications equipment
  • Consumer electronics
  • Industrial applications

Q & A

  1. What is the PSMN035-150B? The PSMN035-150B is a SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) produced by NXP USA Inc.
  2. What package type does the PSMN035-150B use? The PSMN035-150B is packaged in a plastic D2PAK (SOT404) package.
  3. What is the maximum drain-source voltage (VDS) for the PSMN035-150B? The maximum drain-source voltage (VDS) is 150 V.
  4. What is the maximum on-state resistance (RDSon) for the PSMN035-150B? The maximum on-state resistance (RDSon) is 35 mΩ @ VGS = 10 V.
  5. What are the typical applications for the PSMN035-150B? Typical applications include switched-mode power supplies, computing, communications, consumer electronics, and industrial applications.
  6. Is the PSMN035-150B automotive qualified? No, the PSMN035-150B is not automotive qualified.
  7. What is the maximum junction temperature (Tj) for the PSMN035-150B? The maximum junction temperature (Tj) is 175°C.
  8. What is the maximum continuous drain current (ID) for the PSMN035-150B? The maximum continuous drain current (ID) is 50 A.
  9. What are the key features of the PSMN035-150B? Key features include low conduction losses and suitability for high frequency applications due to fast switching characteristics.
  10. Where can I find detailed datasheets and application notes for the PSMN035-150B? Detailed datasheets and application notes can be found on the Nexperia and NXP Semiconductors websites.

Product Attributes

FET Type:- 
FET Feature:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Input Capacitance (Ciss) (Max) @ Vds:- 
Power - Max:- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
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