PSMN035-150B
  • Share:

NXP USA Inc. PSMN035-150B

Manufacturer No:
PSMN035-150B
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
POWER FIELD-EFFECT TRANSISTOR, 5
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PSMN035-150B is a SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) produced by NXP USA Inc. This transistor utilizes TrenchMOS technology and is packaged in a plastic D2PAK (SOT404) package. It is designed and qualified for use in various applications including computing, communications, consumer, and industrial sectors.

Key Specifications

ParameterValue
Type numberPSMN035-150B
Package versionSOT404 (D2PAK)
Channel typeN-channel
Number of transistors1
VDS [max] (V)150
RDSon [max] @ VGS = 10 V (mΩ)35
Tj [max] (°C)175
ID [max] (A)50
QGD [typ] (nC)33
QG(tot) [typ] @ VGS = 10 V (nC)79
Ptot [max] (W)250
Qr [typ] (nC)0.66
VGSth [typ] (V)3
Automotive qualifiedNo
Ciss [typ] (pF)4720
Coss [typ] (pF)456
Release date2010-11-13

Key Features

  • Low conduction losses due to low on-state resistance (RDSon [max] = 35 mΩ @ VGS = 10 V)
  • Suitable for high frequency applications due to fast switching characteristics

Applications

  • Switched-mode power supplies
  • Computing applications
  • Communications equipment
  • Consumer electronics
  • Industrial applications

Q & A

  1. What is the PSMN035-150B? The PSMN035-150B is a SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) produced by NXP USA Inc.
  2. What package type does the PSMN035-150B use? The PSMN035-150B is packaged in a plastic D2PAK (SOT404) package.
  3. What is the maximum drain-source voltage (VDS) for the PSMN035-150B? The maximum drain-source voltage (VDS) is 150 V.
  4. What is the maximum on-state resistance (RDSon) for the PSMN035-150B? The maximum on-state resistance (RDSon) is 35 mΩ @ VGS = 10 V.
  5. What are the typical applications for the PSMN035-150B? Typical applications include switched-mode power supplies, computing, communications, consumer electronics, and industrial applications.
  6. Is the PSMN035-150B automotive qualified? No, the PSMN035-150B is not automotive qualified.
  7. What is the maximum junction temperature (Tj) for the PSMN035-150B? The maximum junction temperature (Tj) is 175°C.
  8. What is the maximum continuous drain current (ID) for the PSMN035-150B? The maximum continuous drain current (ID) is 50 A.
  9. What are the key features of the PSMN035-150B? Key features include low conduction losses and suitability for high frequency applications due to fast switching characteristics.
  10. Where can I find detailed datasheets and application notes for the PSMN035-150B? Detailed datasheets and application notes can be found on the Nexperia and NXP Semiconductors websites.

Product Attributes

FET Type:- 
FET Feature:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Input Capacitance (Ciss) (Max) @ Vds:- 
Power - Max:- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
0 Remaining View Similar

In Stock

-
225

Please send RFQ , we will respond immediately.

Same Series
DD15S20LV3S
DD15S20LV3S
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HT20/AA
CBC13W3S10HT20/AA
CONN D-SUB RCPT 13POS CRIMP
DD44S32S60T20
DD44S32S60T20
CONN D-SUB HD RCPT 44P VERT SLDR
DD26M20HE2Z/AA
DD26M20HE2Z/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD26S200TX
DD26S200TX
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200E30/AA
DD26S200E30/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200V3X
DD26S200V3X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50T20/AA
DD26S2S50T20/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50V3X/AA
DD26S2S50V3X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
RD50S100V50
RD50S100V50
CONN D-SUB RCPT 50POS CRIMP
DD44S32S0TX
DD44S32S0TX
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S500X
DD44S32S500X
CONN D-SUB HD RCPT 44P VERT SLDR

Related Product By Categories

NTHD4508NT1G
NTHD4508NT1G
onsemi
MOSFET 2N-CH 20V 3A CHIPFET
FDC8602
FDC8602
onsemi
MOSFET 2N-CH 100V 1.2A 6-SSOT
CSD86350Q5D
CSD86350Q5D
Texas Instruments
MOSFET 2N-CH 25V 40A 8SON
FDC6420C
FDC6420C
onsemi
MOSFET N/P-CH 20V 3A/2.2A SSOT-6
FDPC8016S
FDPC8016S
onsemi
MOSFET 2N-CH 25V 8PWRCLIP
NVMFD5C470NLT1G
NVMFD5C470NLT1G
onsemi
MOSFET 2N-CH 40V 36A S08FL
STL15DN4F5
STL15DN4F5
STMicroelectronics
MOSFET 2N-CH 40V 60A POWERFLAT
NVMFD5C462NT1G
NVMFD5C462NT1G
onsemi
40V 5.4 MOHM T8 S08FL DUA
NVMD3P03R2G
NVMD3P03R2G
Fairchild Semiconductor
SMALL SIGNAL FIELD-EFFECT TRANSI
BSS84DW-7
BSS84DW-7
Diodes Incorporated
MOSFET 2P-CH 50V 0.13A SC70-6
2N7002BKS/ZLX
2N7002BKS/ZLX
Nexperia USA Inc.
MOSFET 2 N-CH 60V 300MA SOT363
FDPC4044-P
FDPC4044-P
onsemi
MOSFET N-CHANNEL 8MLP

Related Product By Brand

PESD5V0L5UV/DG125
PESD5V0L5UV/DG125
NXP USA Inc.
TVS DIODE
BAV99/LF1R
BAV99/LF1R
NXP USA Inc.
DIODE SWITCHING TO-236AB
BZX84-C13/DG/B3215
BZX84-C13/DG/B3215
NXP USA Inc.
DIODE ZENER
BUK98150-55A,135
BUK98150-55A,135
NXP USA Inc.
MOSFET N-CH 55V 5.5A SOT-223
MK10DX128VLH7
MK10DX128VLH7
NXP USA Inc.
IC MCU 32BIT 128KB FLASH 64LQFP
S9S12P32J0CFTR
S9S12P32J0CFTR
NXP USA Inc.
IC MCU 16BIT 32KB FLASH 48QFN
P1012NSE2DFB
P1012NSE2DFB
NXP USA Inc.
IC MPU Q OR IQ 800MHZ 689TEBGA
AU5780AD/N,112
AU5780AD/N,112
NXP USA Inc.
IC TRANSCEIVER FULL 1/1 8SO
SC28L198A1A,529
SC28L198A1A,529
NXP USA Inc.
IC UART OCTAL SOT189-3
SA5212AD,602
SA5212AD,602
NXP USA Inc.
IC TRANSIMPEDANCE 1 CIRCUIT 8SO
PCF8566T/S480/1,11
PCF8566T/S480/1,11
NXP USA Inc.
IC DRVR 7 SEGMNT 12 DIGIT 40VSO
MMPF0200NPAEP557
MMPF0200NPAEP557
NXP USA Inc.
POWER SUPPLY SUPPORT CIRCUIT AD