Overview
The PSMN035-150B is a SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) produced by NXP USA Inc. This transistor utilizes TrenchMOS technology and is packaged in a plastic D2PAK (SOT404) package. It is designed and qualified for use in various applications including computing, communications, consumer, and industrial sectors.
Key Specifications
Parameter | Value |
---|---|
Type number | PSMN035-150B |
Package version | SOT404 (D2PAK) |
Channel type | N-channel |
Number of transistors | 1 |
VDS [max] (V) | 150 |
RDSon [max] @ VGS = 10 V (mΩ) | 35 |
Tj [max] (°C) | 175 |
ID [max] (A) | 50 |
QGD [typ] (nC) | 33 |
QG(tot) [typ] @ VGS = 10 V (nC) | 79 |
Ptot [max] (W) | 250 |
Qr [typ] (nC) | 0.66 |
VGSth [typ] (V) | 3 |
Automotive qualified | No |
Ciss [typ] (pF) | 4720 |
Coss [typ] (pF) | 456 |
Release date | 2010-11-13 |
Key Features
- Low conduction losses due to low on-state resistance (RDSon [max] = 35 mΩ @ VGS = 10 V)
- Suitable for high frequency applications due to fast switching characteristics
Applications
- Switched-mode power supplies
- Computing applications
- Communications equipment
- Consumer electronics
- Industrial applications
Q & A
- What is the PSMN035-150B? The PSMN035-150B is a SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) produced by NXP USA Inc.
- What package type does the PSMN035-150B use? The PSMN035-150B is packaged in a plastic D2PAK (SOT404) package.
- What is the maximum drain-source voltage (VDS) for the PSMN035-150B? The maximum drain-source voltage (VDS) is 150 V.
- What is the maximum on-state resistance (RDSon) for the PSMN035-150B? The maximum on-state resistance (RDSon) is 35 mΩ @ VGS = 10 V.
- What are the typical applications for the PSMN035-150B? Typical applications include switched-mode power supplies, computing, communications, consumer electronics, and industrial applications.
- Is the PSMN035-150B automotive qualified? No, the PSMN035-150B is not automotive qualified.
- What is the maximum junction temperature (Tj) for the PSMN035-150B? The maximum junction temperature (Tj) is 175°C.
- What is the maximum continuous drain current (ID) for the PSMN035-150B? The maximum continuous drain current (ID) is 50 A.
- What are the key features of the PSMN035-150B? Key features include low conduction losses and suitability for high frequency applications due to fast switching characteristics.
- Where can I find detailed datasheets and application notes for the PSMN035-150B? Detailed datasheets and application notes can be found on the Nexperia and NXP Semiconductors websites.