PSMN035-150B
  • Share:

NXP USA Inc. PSMN035-150B

Manufacturer No:
PSMN035-150B
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
POWER FIELD-EFFECT TRANSISTOR, 5
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PSMN035-150B is a SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) produced by NXP USA Inc. This transistor utilizes TrenchMOS technology and is packaged in a plastic D2PAK (SOT404) package. It is designed and qualified for use in various applications including computing, communications, consumer, and industrial sectors.

Key Specifications

ParameterValue
Type numberPSMN035-150B
Package versionSOT404 (D2PAK)
Channel typeN-channel
Number of transistors1
VDS [max] (V)150
RDSon [max] @ VGS = 10 V (mΩ)35
Tj [max] (°C)175
ID [max] (A)50
QGD [typ] (nC)33
QG(tot) [typ] @ VGS = 10 V (nC)79
Ptot [max] (W)250
Qr [typ] (nC)0.66
VGSth [typ] (V)3
Automotive qualifiedNo
Ciss [typ] (pF)4720
Coss [typ] (pF)456
Release date2010-11-13

Key Features

  • Low conduction losses due to low on-state resistance (RDSon [max] = 35 mΩ @ VGS = 10 V)
  • Suitable for high frequency applications due to fast switching characteristics

Applications

  • Switched-mode power supplies
  • Computing applications
  • Communications equipment
  • Consumer electronics
  • Industrial applications

Q & A

  1. What is the PSMN035-150B? The PSMN035-150B is a SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) produced by NXP USA Inc.
  2. What package type does the PSMN035-150B use? The PSMN035-150B is packaged in a plastic D2PAK (SOT404) package.
  3. What is the maximum drain-source voltage (VDS) for the PSMN035-150B? The maximum drain-source voltage (VDS) is 150 V.
  4. What is the maximum on-state resistance (RDSon) for the PSMN035-150B? The maximum on-state resistance (RDSon) is 35 mΩ @ VGS = 10 V.
  5. What are the typical applications for the PSMN035-150B? Typical applications include switched-mode power supplies, computing, communications, consumer electronics, and industrial applications.
  6. Is the PSMN035-150B automotive qualified? No, the PSMN035-150B is not automotive qualified.
  7. What is the maximum junction temperature (Tj) for the PSMN035-150B? The maximum junction temperature (Tj) is 175°C.
  8. What is the maximum continuous drain current (ID) for the PSMN035-150B? The maximum continuous drain current (ID) is 50 A.
  9. What are the key features of the PSMN035-150B? Key features include low conduction losses and suitability for high frequency applications due to fast switching characteristics.
  10. Where can I find detailed datasheets and application notes for the PSMN035-150B? Detailed datasheets and application notes can be found on the Nexperia and NXP Semiconductors websites.

Product Attributes

FET Type:- 
FET Feature:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Input Capacitance (Ciss) (Max) @ Vds:- 
Power - Max:- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
0 Remaining View Similar

In Stock

-
225

Please send RFQ , we will respond immediately.

Same Series
DD15S20LV30/AA
DD15S20LV30/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20WTS/AA
DD15S20WTS/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S200T2S
DD15S200T2S
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HE2X/AA
CBC13W3S10HE2X/AA
CONN D-SUB RCPT 13POS CRIMP
CBC47W1S1S50T20
CBC47W1S1S50T20
CONN D-SUB RCPT 47POS CRIMP
DD26S20000
DD26S20000
CONN D-SUB HD RCPT 26P SLDR CUP
DD26M20HE30/AA
DD26M20HE30/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD26S200E0/AA
DD26S200E0/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0V5X/AA
DD26S2S0V5X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50V30
DD26S2S50V30
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50V50
DD26S2S50V50
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20J00
DD26S20J00
CONN D-SUB HD RCPT 26P SLDR CUP

Related Product By Categories

NTHD4508NT1G
NTHD4508NT1G
onsemi
MOSFET 2N-CH 20V 3A CHIPFET
2N7002DWQ-7-F
2N7002DWQ-7-F
Diodes Incorporated
MOSFET 2N-CH 60V 0.23A SOT363
BSS138DWQ-7
BSS138DWQ-7
Diodes Incorporated
MOSFET 2NCH 50V 200MA SOT363
2N7002VA
2N7002VA
onsemi
MOSFET 2N-CH 60V 280MA SOT563F
NTZD3154NT5G
NTZD3154NT5G
onsemi
MOSFET 2N-CH 20V 0.54A SOT563
NVMFD5C680NLT1G
NVMFD5C680NLT1G
onsemi
MOSFET 2N-CH 60V 26A S08FL
EFC4C002NLTDG
EFC4C002NLTDG
onsemi
MOSFET 2N-CH 8WLCSP
FDS4897AC
FDS4897AC
onsemi
MOSFET N/P-CH 40V 6.1A/5.2A 8SO
NTJD4001NT1
NTJD4001NT1
onsemi
MOSFET 2N-CH 30V 0.25A SOT363
NTZD3154NT1H
NTZD3154NT1H
onsemi
MOSFET 2N-CH 20V 540MA SOT563-6
NTMFD4C86NT1G
NTMFD4C86NT1G
onsemi
MOSFET 2N-CH 30V 8DFN
VEC2315-TL-W
VEC2315-TL-W
onsemi
MOSFET 2P-CH 60V 2.5A VEC8

Related Product By Brand

PMEG4030ER/DG/B2,1
PMEG4030ER/DG/B2,1
NXP USA Inc.
PMEG4030ER/DG/B2,1
PDTA144EU/ZL115
PDTA144EU/ZL115
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
ADC1004S030TS/C1:1
ADC1004S030TS/C1:1
NXP USA Inc.
IC ADC 10BIT 28SSOP
LPC2194HBD64/01,15
LPC2194HBD64/01,15
NXP USA Inc.
IC MCU 16/32B 256KB FLASH 64LQFP
MKE04Z64VLH4
MKE04Z64VLH4
NXP USA Inc.
IC MCU 32BIT 64KB FLASH 64LQFP
LPC5502JHI48QL
LPC5502JHI48QL
NXP USA Inc.
IC MCU 32BIT 64KB FLASH 48HVQFN
MIMXRT1171CVM8A
MIMXRT1171CVM8A
NXP USA Inc.
IC MCU 32BIT EXT MEM 289MAPBGA
NX3L2267GM,132
NX3L2267GM,132
NXP USA Inc.
IC ANALOG SWITCH SPDT 10XQFN
74HC02D/AU118
74HC02D/AU118
NXP USA Inc.
IC GATE NOR 4CH 2-INP 14SO
MC56F82748VLH,557
MC56F82748VLH,557
NXP USA Inc.
DIGITAL SIGNAL CONTROLLER
MMA8652FCR1
MMA8652FCR1
NXP USA Inc.
ACCELEROMETER 2-8G I2C 10DFN
MPXHZ6115AC6T1
MPXHZ6115AC6T1
NXP USA Inc.
SENSOR ABS PRESS 16.7PSI MAX