PMV20XNEA,215
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Nexperia USA Inc. PMV20XNEA,215

Manufacturer No:
PMV20XNEA,215
Manufacturer:
Nexperia USA Inc.
Package:
Bulk
Description:
6.3A, 20V, N CHANNEL, SILICON, M
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PMV20XNEA is a 20 V, N-channel enhancement mode Field-Effect Transistor (FET) produced by Nexperia USA Inc. This device utilizes Trench MOSFET technology and is packaged in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. It is AEC-Q101 qualified, making it suitable for automotive applications. The PMV20XNEA is known for its low threshold voltage, very fast switching capabilities, and enhanced ElectroStatic Discharge (ESD) protection of more than 2 kV HBM.

Key Specifications

Parameter Value Unit
Type number PMV20XNEA -
Package SOT23 -
Channel type N -
Number of transistors 1 -
V DS [max] 20 V
R DSon [max] @ V GS = 4.5 V; @25 C 20 mΩ
R DSon [max] @ V GS = 2.5 V 34 mΩ
T j [max] 150 °C
I D [max] 6.3 A
Q GD [typ] 3.1 nC
Q G(tot) [typ] @ V GS = 4.5 V 9.9 nC
P tot [max] 1.19 W
V GSth [typ] 1 V
Automotive qualified Yes -
C iss [typ] 930 pF
C oss [typ] 178 pF
Release date 2016-03-02 -

Key Features

  • Trench MOSFET technology for enhanced performance.
  • Low threshold voltage for efficient operation.
  • Very fast switching capabilities.
  • ElectroStatic Discharge (ESD) protection greater than 2 kV HBM.
  • AEC-Q101 qualified, suitable for automotive applications.

Applications

  • Relay driver.
  • High-speed line driver.
  • Low-side load switch.
  • Switching circuits.
  • Automotive, industrial, power, computing, consumer, mobile, and wearable applications.

Q & A

  1. What is the maximum drain-source voltage (V DS) of the PMV20XNEA?

    The maximum drain-source voltage (V DS) is 20 V.

  2. What package type is the PMV20XNEA available in?

    The PMV20XNEA is available in a SOT23 (TO-236AB) package.

  3. Is the PMV20XNEA AEC-Q101 qualified?

    Yes, the PMV20XNEA is AEC-Q101 qualified.

  4. What is the maximum junction temperature (T j) of the PMV20XNEA?

    The maximum junction temperature (T j) is 150°C.

  5. What is the typical gate-source threshold voltage (V GSth) of the PMV20XNEA?

    The typical gate-source threshold voltage (V GSth) is 1 V.

  6. What is the maximum continuous drain current (I D) of the PMV20XNEA?

    The maximum continuous drain current (I D) is 6.3 A.

  7. Does the PMV20XNEA have ESD protection?

    Yes, the PMV20XNEA has ESD protection greater than 2 kV HBM.

  8. What are some common applications of the PMV20XNEA?

    Common applications include relay drivers, high-speed line drivers, low-side load switches, and switching circuits.

  9. How can I obtain samples of the PMV20XNEA?

    Samples can be obtained through Nexperia's sales organization or through their network of global and regional distributors.

  10. What is the release date of the PMV20XNEA?

    The PMV20XNEA was released on 2016-03-02.

Product Attributes

FET Type:- 
FET Feature:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Input Capacitance (Ciss) (Max) @ Vds:- 
Power - Max:- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
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